JP5018609B2 - 単結晶引上げ装置 - Google Patents
単結晶引上げ装置 Download PDFInfo
- Publication number
- JP5018609B2 JP5018609B2 JP2008100272A JP2008100272A JP5018609B2 JP 5018609 B2 JP5018609 B2 JP 5018609B2 JP 2008100272 A JP2008100272 A JP 2008100272A JP 2008100272 A JP2008100272 A JP 2008100272A JP 5018609 B2 JP5018609 B2 JP 5018609B2
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- JP
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- Prior art keywords
- water
- single crystal
- cooling
- cooled body
- chamber
- Prior art date
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- 239000013078 crystal Substances 0.000 title claims description 95
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 87
- 239000000498 cooling water Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 229910001220 stainless steel Inorganic materials 0.000 claims description 16
- 239000010935 stainless steel Substances 0.000 claims description 16
- 239000000155 melt Substances 0.000 claims description 14
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 description 30
- 239000002184 metal Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 230000007797 corrosion Effects 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 9
- 238000004880 explosion Methods 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 7
- 238000009835 boiling Methods 0.000 description 6
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
11 チャンバー
11a 孔
12 保温部材
13 坩堝
13a 石英坩堝
13b 黒鉛坩堝
14 支持軸
15 ヒーター
16 引上げ軸
17 熱遮蔽部材
18 O‐リング
19a 注入口
19b 排出口
20 溶融液
21 シード
22 単結晶
30 冷却装置
31 水冷体
31a 水路
32 水配管
32a 給水管
32b 排水管
32c 異種金属溶接部
32d 同種金属溶接部
33 冷却水供給・排出装置
34 支持アーム
35 ボルト
Claims (6)
- チャンバーと、前記チャンバー内部に配置され溶融液を収容する坩堝と、前記坩堝内の溶融液から引き上げられる単結晶を取り囲むように前記チャンバーの内部に配置された水冷体と、前記水冷体に冷却水を供給し排出する水配管と、前記チャンバーに接続され前記水冷体を支持する支持アームと、を備えた単結晶引上げ装置において、
前記支持アームが、前記単結晶と前記水配管との間に配置され、前記水配管と前記単結晶とが直接対向しないことを特徴とする単結晶引上げ装置。 - 前記支持アームが形鋼で構成されていることを特徴とする請求項1に記載の単結晶引上げ装置。
- 前記支持アームがステンレス鋼からなることを特徴とする請求項1または2に記載の単結晶引上げ装置。
- 前記水配管が前記チャンバーの外部に延長され、前記水配管は前記水冷体を構成する第1の材料からなる部分と、前記水冷体を構成する材料と異なる第2の材料からなる部分とからなり、前記チャンバーの外部で前記第1の材料からなる部分と前記第2の材料からなる部分が接合されていることを特徴とする請求項1〜3のいずれかに記載の単結晶引上げ装置。
- 前記第1の材料が銅であり、前記第2の材料がステンレス鋼であることを特徴とする請求項4に記載の単結晶引上げ装置。
- 前記水冷体の内部に配置された水路が、前記水配管から供給された冷却水を底部に下降させた後、循環流動させるとともに逐次上昇させて排出させる構造であることを特徴とする請求項1〜5のいずれかに記載の単結晶引上げ装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008100272A JP5018609B2 (ja) | 2008-04-08 | 2008-04-08 | 単結晶引上げ装置 |
US12/385,384 US9145620B2 (en) | 2008-04-08 | 2009-04-07 | Single crystal pulling apparatus |
TW098111510A TWI390088B (zh) | 2008-04-08 | 2009-04-07 | Single crystal pull-up device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008100272A JP5018609B2 (ja) | 2008-04-08 | 2008-04-08 | 単結晶引上げ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009249243A JP2009249243A (ja) | 2009-10-29 |
JP5018609B2 true JP5018609B2 (ja) | 2012-09-05 |
Family
ID=41132088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008100272A Active JP5018609B2 (ja) | 2008-04-08 | 2008-04-08 | 単結晶引上げ装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9145620B2 (ja) |
JP (1) | JP5018609B2 (ja) |
TW (1) | TWI390088B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10378121B2 (en) * | 2015-11-24 | 2019-08-13 | Globalwafers Co., Ltd. | Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path |
CN117926392A (zh) * | 2024-03-21 | 2024-04-26 | 浙江晶阳机电股份有限公司 | 一种多圈分层冷却晶棒的装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS516187A (ja) * | 1974-07-05 | 1976-01-19 | Dowa Mining Co | Kinzokukankagobutsutanketsushono hikiagehoho oyobi korenishosurudenkiro |
WO1993000462A1 (en) * | 1991-06-24 | 1993-01-07 | Komatsu Electronic Metals Co., Ltd. | Device for pulling up single crystal |
JP3992800B2 (ja) * | 1997-09-22 | 2007-10-17 | Sumco Techxiv株式会社 | 単結晶製造装置および単結晶の製造方法 |
JP4195738B2 (ja) * | 1998-04-08 | 2008-12-10 | Sumco Techxiv株式会社 | 単結晶製造装置 |
JP4357068B2 (ja) * | 1999-05-11 | 2009-11-04 | Sumco Techxiv株式会社 | 単結晶インゴット製造装置及び方法 |
US6733585B2 (en) * | 2000-02-01 | 2004-05-11 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Apparatus for pulling single crystal by CZ method |
JP3685026B2 (ja) * | 2000-09-26 | 2005-08-17 | 三菱住友シリコン株式会社 | 結晶成長装置 |
JP3678129B2 (ja) * | 2000-09-26 | 2005-08-03 | 三菱住友シリコン株式会社 | 結晶成長方法 |
JP3587155B2 (ja) * | 2000-10-10 | 2004-11-10 | 三菱住友シリコン株式会社 | 結晶成長装置 |
JP3952356B2 (ja) * | 2001-02-28 | 2007-08-01 | 信越半導体株式会社 | 半導体単結晶製造装置及びそれを用いた半導体単結晶の製造方法 |
JP4175008B2 (ja) * | 2002-03-22 | 2008-11-05 | 株式会社Sumco | 単結晶の育成方法 |
JP4259285B2 (ja) * | 2003-11-17 | 2009-04-30 | 株式会社Sumco | 単結晶引上げ装置の冷却装置 |
JP4253841B2 (ja) * | 2004-02-23 | 2009-04-15 | 株式会社Sumco | シリコン単結晶の育成装置 |
-
2008
- 2008-04-08 JP JP2008100272A patent/JP5018609B2/ja active Active
-
2009
- 2009-04-07 TW TW098111510A patent/TWI390088B/zh active
- 2009-04-07 US US12/385,384 patent/US9145620B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201000689A (en) | 2010-01-01 |
US20090249998A1 (en) | 2009-10-08 |
TWI390088B (zh) | 2013-03-21 |
US9145620B2 (en) | 2015-09-29 |
JP2009249243A (ja) | 2009-10-29 |
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