KR900701649A - 저비소 고순도 무수 플루오르화수소의 제조방법 - Google Patents

저비소 고순도 무수 플루오르화수소의 제조방법

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Publication number
KR900701649A
KR900701649A KR1019900700477A KR900700477A KR900701649A KR 900701649 A KR900701649 A KR 900701649A KR 1019900700477 A KR1019900700477 A KR 1019900700477A KR 900700477 A KR900700477 A KR 900700477A KR 900701649 A KR900701649 A KR 900701649A
Authority
KR
South Korea
Prior art keywords
process according
arsenic
catalyst component
hydrogen fluoride
anhydrous hydrogen
Prior art date
Application number
KR1019900700477A
Other languages
English (en)
Other versions
KR970000892B1 (ko
Inventor
나라나파 수바나 소마나할리
루이스 레드먼 찰스
죤 보그힌 배리
왐서 크리스티언
Original Assignee
제라드 피이. 루우니
알라이드-시그날 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제라드 피이. 루우니, 알라이드-시그날 인코포레이티드 filed Critical 제라드 피이. 루우니
Publication of KR900701649A publication Critical patent/KR900701649A/ko
Application granted granted Critical
Publication of KR970000892B1 publication Critical patent/KR970000892B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G28/00—Compounds of arsenic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C01B7/196—Separation; Purification by distillation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

내용 없음

Description

저비소 고순도 무수 플루오르화수소의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. (a) 비소 오염된 무수 플루오르화수소를, 촉매적양의 (i) 몰리브덴, 몰리브덴화합물, 바나듐 및 바나듐화합물로 구성된 군으로부터 선택된 성분 및 (ii)인산염으로 구성되는 촉매존재하에서, 무수 플루오로화수소내의 휘발성 3가 비소불순물을 비휘발성 5가 비소 화합물로 산화시키기에 적절한 온도와 시간에서 과산화수소와 접촉시켜 비소불순물을 산화시키고: (b) 결과의 혼합물을 증류하여 감소된 저수준의 비소불순물을 함유하는 무수 플루오르화수소를 회수함을 특징으로 하는, 저비소 고순도 플루오르화수소의 제조방법.
  2. 제1항에 있어서, 비소 오염된 무수 플루오르화수소가 과산화수소에 의한 비소불순물 산화를 저해하는 양의 유기오염물질을 함유하지 않는 것임을 특징으로 하는 제조방법.
  3. 제1항에 있어서, 비소오염된 무수 플루오르화수소가 유기물질로 오염된 것이며, 그 유기물질을 산화시키는 산화제와 접촉처리됨을 특징으로하는 제조방법.
  4. 제1항에 있어서, 촉매성분(i)의 유기 몰리브덴 화합물인 것을 특징으로하는 제조방법.
  5. 제1항에 있어서, 촉매성분(i)이 바나듐인 것을 특징으로 하는 제조방법.
  6. 제1항에 있어서, 촉매성분(i)이 유기 바나듐 화합물인 것을 특징으로 하는 제조방법.
  7. 제1항에 있어서, 촉매성분(i)이 무기 바나듐 화합물인 것을 특징으로 하는 제조방법.
  8. 제1항에 있어서, 촉매성분(i)이 무기 바나듐산 암모늄인 것을 특징으로 하는 제조방법.
  9. 제1항에 있어서, 촉매성분(i)이 무기 바나듐산나트륨인 것을 특징으로 하는 제조방법.
  10. 제1항에 있어서, 촉매성분(i)의 양이 100%HF 기준으로 3.7ppm 이상이고, 촉매성분(ii)의 양이 100%HF 기준으로 3.5ppm 이상인 것을 특징으로 하는 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900700477A 1988-07-11 1989-06-29 저비소 고순도 무수 플루오르화수소의 제조방법 KR970000892B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US217.497 1988-07-11
US07/217,497 US4929435A (en) 1987-02-12 1988-07-11 Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US217,497 1988-07-11
PCT/US1989/002902 WO1990000521A1 (en) 1988-07-11 1989-06-29 Manufacture of high purity low arsenic anhydrous hydrogen fluoride

Publications (2)

Publication Number Publication Date
KR900701649A true KR900701649A (ko) 1990-12-04
KR970000892B1 KR970000892B1 (ko) 1997-01-21

Family

ID=22811337

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900700477A KR970000892B1 (ko) 1988-07-11 1989-06-29 저비소 고순도 무수 플루오르화수소의 제조방법

Country Status (10)

Country Link
US (1) US4929435A (ko)
EP (2) EP0351107B1 (ko)
JP (1) JPH0657602B2 (ko)
KR (1) KR970000892B1 (ko)
AU (1) AU636298B2 (ko)
CA (1) CA1314382C (ko)
DE (1) DE68906973T2 (ko)
ES (1) ES2055065T3 (ko)
MX (1) MX167322B (ko)
WO (1) WO1990000521A1 (ko)

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US4960580A (en) * 1989-10-31 1990-10-02 E. I. Du Pont De Nemours And Company Process for purifying hydrogen fluoride
ES2077842T3 (es) * 1990-03-02 1995-12-01 Du Pont Procedimiento para purificar fluoruro de hidrogeno.
US5089241A (en) * 1990-12-20 1992-02-18 Allied-Signal Inc. Process for converting hexafluoroarsenic acid or any salt thereof to arsenic acid or salt thereof which can then be rendered nonhazardous
GB9300956D0 (en) * 1993-01-19 1993-03-10 British Nuclear Fuels Plc Dehydration of mixtures
US5785820A (en) * 1994-01-07 1998-07-28 Startec Ventures, Inc. On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing
US5846386A (en) * 1994-01-07 1998-12-08 Startec Ventures, Inc. On-site ammonia purification for semiconductor manufacture
US5496778A (en) * 1994-01-07 1996-03-05 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component manufacture
US5722442A (en) * 1994-01-07 1998-03-03 Startec Ventures, Inc. On-site generation of ultra-high-purity buffered-HF for semiconductor processing
WO1996039266A1 (en) * 1995-06-05 1996-12-12 Startec Ventures, Inc. On-site generation of ultra-high-purity buffered-hf for semiconductor processing
US5846387A (en) * 1994-01-07 1998-12-08 Air Liquide Electronics Chemicals & Services, Inc. On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing
US6350425B2 (en) * 1994-01-07 2002-02-26 Air Liquide America Corporation On-site generation of ultra-high-purity buffered-HF and ammonium fluoride
MY132240A (en) * 1995-06-05 2007-09-28 Startec Ventures Inc On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing
EP0830316A1 (en) * 1995-06-05 1998-03-25 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component manufacture
EP0831978B1 (en) * 1995-06-05 2001-02-28 Air Liquide America Corporation On-site ammonia purification for semiconductor manufacture
AU6161996A (en) * 1995-06-05 1996-12-24 Startec Ventures, Inc. On-site manufacture of ultra-high-purity hydrochloric acid f or semiconductor processing
US6001223A (en) * 1995-07-07 1999-12-14 Air Liquide America Corporation On-site ammonia purification for semiconductor manufacture
EP0879211A1 (en) * 1995-11-13 1998-11-25 AlliedSignal Inc. Manufacture of very low arsenic hydrogen fluoride
US6214173B1 (en) 1996-06-05 2001-04-10 Air Liquide Electronics Chemicals & Services, Inc. On-site manufacture of ultra-high-purity nitric acid
DE10031563B4 (de) 2000-06-28 2009-01-29 Lanxess Deutschland Gmbh Verfahren zur Herstellung von perfluororganischen Verbindungen durch elektrochemische Fluorierung
DE10031565B4 (de) 2000-06-28 2006-02-23 Bulan, Andreas Verfahren zur Herstellung von perfluorierten organischen Verbindungen durch elektrochemische Fluorierung
US20080003172A1 (en) * 2006-06-29 2008-01-03 Honeywell International Inc. Continuous hydrolysis of hexafluoroarsenic acid
US9260306B2 (en) 2008-11-28 2016-02-16 Kyoto University Hydrogen fluoride purification method
MX357878B (es) 2014-12-18 2018-07-27 Mexichem Fluor Sa De Capital Variable Proceso para la purificación del ácido fluorhídrico incluyendo la obtención del subproducto ácido arsenioso.
CN108862200B (zh) * 2018-07-31 2020-04-28 苏州香榭轩表面工程技术咨询有限公司 一种超高纯氢氟酸的制备方法
CN114195099B (zh) * 2021-12-16 2023-04-28 浙江博瑞电子科技有限公司 一种多通道微反应器原位除砷制备电子级氟化氢和电子级氢氟酸的方法

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Also Published As

Publication number Publication date
JPH0657602B2 (ja) 1994-08-03
AU3872589A (en) 1990-02-05
EP0351107B1 (en) 1993-06-09
AU636298B2 (en) 1993-04-29
ES2055065T3 (es) 1994-08-16
DE68906973T2 (de) 1993-09-16
MX167322B (es) 1993-03-16
CA1314382C (en) 1993-03-16
KR970000892B1 (ko) 1997-01-21
WO1990000521A1 (en) 1990-01-25
JPH03501965A (ja) 1991-05-09
EP0351107A1 (en) 1990-01-17
DE68906973D1 (de) 1993-07-15
US4929435A (en) 1990-05-29
EP0428547A1 (en) 1991-05-29

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