KR890700538A - 고순도 저비소 무수불화수소 제조공정 - Google Patents

고순도 저비소 무수불화수소 제조공정

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Publication number
KR890700538A
KR890700538A KR1019880701263A KR880701263A KR890700538A KR 890700538 A KR890700538 A KR 890700538A KR 1019880701263 A KR1019880701263 A KR 1019880701263A KR 880701263 A KR880701263 A KR 880701263A KR 890700538 A KR890700538 A KR 890700538A
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KR
South Korea
Prior art keywords
arsenic
amount
hydrogen fluoride
catalyst
hydrogen peroxide
Prior art date
Application number
KR1019880701263A
Other languages
English (en)
Other versions
KR950014205B1 (ko
Inventor
데오도르 죤 젠 크제워스키
로버트 랜스 스튜어트반트
토마스 리챠드 모건
바리 죤 보건
도날드 크리스토퍼 버트
Original Assignee
로이 에이취. 멧신길
알라이드-시그널 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 로이 에이취. 멧신길, 알라이드-시그널 인코포레이티드 filed Critical 로이 에이취. 멧신길
Publication of KR890700538A publication Critical patent/KR890700538A/ko
Application granted granted Critical
Publication of KR950014205B1 publication Critical patent/KR950014205B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C01B7/196—Separation; Purification by distillation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G28/00—Compounds of arsenic

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

내용 없음.

Description

고순도 저비소 무수불화수소 제조공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. (a)부수불화수소(anhydrous hydrogen fluoride)내의 휘발성 2가(價)비소불순물(arsenic impurities)을 비휘발성 5가 비소화물로 산화시키기에 충분한 온도 및 시간으로, 촉매적으로 효과량의 (1)몰리브덴(molybdenum) 혹은 하나의 무기몰리브덴화합물 및 (2)인산염화합물(a phosphate compound)을 포함하는 촉매의 존재하에, 무수불화수소을 비소불순물을 산화시키기위한 효과량의 과산화수소(hydrogen peroxide)와 접촉시키는 단계 : 및 (b)상기 결과혼합물을 증류하고 비소불순물의 수준이 감소된 고순도의 무수불화수소를 회수하는단계, 를 포함함을 특징으로 하는, 비소오염된 무수불화수소로부터 비소불순물의 수준이 낮은 고순도 무수불화수소를 제조하는 공정.
  2. 1항에 있어서, 비소오염된 불화수소는 상기비소불순물의 과산화수소 산화를 방해하는 량의 유기오염(organic contaminent)이 없는것을 특징으로 하는 제조공정.
  3. 2항에 있어서, 상기 3가 비소불순물을 상기 5가 비소화합물로 산화시키는데 요구되는 과산화수소의 이론적량 이상의 량이 사용됨을 특징으로 하는 제조공정.
  4. 3항에 있어서, 상기 촉매는 몰리브덴산암모늄(ammonium molybdate)을 포함함을 특징으로 하는 제조공정.
  5. 3항에 있어서, 상기촉매는 피로인산나트륨(sodium pyrophosphate)을 포함함을 특징으로 하는 제조공정.
  6. 3항에 있어서, 상기촉매는 인산(phosphoric acid)을 포함함을 특징으로 하는 제조공정.
  7. 3항에 있어서, 상기촉매는 몰리브덴산암모늄과 피로인산나트륨을 포함함을 특징으로 하는 제조공정.
  8. 3항에 있어서, 상기촉매는 몰리브덴산암모늄과 인산을 포함함을 특징으로 하는 제조공정.
  9. 3항에 있어서, 사용되는 과산화수소의 량은 이론적인량의 최소 3배임을 특징으로 하는 제조공정.
  10. 3항에 있어서, 촉매내의 몰리브덴 성분의량은 100% HF를 기준으로 하여 최소 약 3.7ppm이며, 촉매내의 인산성분(phosphate component)량의 100% HF를 기준으로 최소약 3.5ppm임을 특징으로 하는 제조공정.
  11. 1항에 있어서, 비소오염된 불화수소는 상기 비소불순물의 과산화수소 산화를 방해하는 량의 유기불순물을 포함하며, 상기 비소 불순물과 과산화수소의 반응은 존재하는 유기불순물을 산화시키기 위한 효과량의 산화제가 부가적으로 존재하에 실시되는 것을 특징으로 하는 제조공정.
  12. 11항에 있어서, 상기 산화제는 질산 혹은 그 염산인것을 특징으로 하는 제조공정.
  13. 12항에 있어서, 산화제는 질산나트륨(sodium nitrate)임을 특징으로 하는 제조공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880701263A 1987-02-12 1988-02-10 고순도 저비소 무수 불화수소 제조공정 KR950014205B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/014,422 US4756899A (en) 1987-02-12 1987-02-12 Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US014422 1987-02-12
US014,422 1987-02-12
PCT/US1988/000394 WO1988006139A1 (en) 1987-02-12 1988-02-10 Manufacture of high purity low arsenic anhydrous hydrogen fluoride

Publications (2)

Publication Number Publication Date
KR890700538A true KR890700538A (ko) 1989-04-25
KR950014205B1 KR950014205B1 (ko) 1995-11-23

Family

ID=21765388

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880701263A KR950014205B1 (ko) 1987-02-12 1988-02-10 고순도 저비소 무수 불화수소 제조공정

Country Status (11)

Country Link
US (1) US4756899A (ko)
EP (2) EP0280439B1 (ko)
JP (1) JP2584505B2 (ko)
KR (1) KR950014205B1 (ko)
AU (1) AU609096B2 (ko)
CA (1) CA1305600C (ko)
DE (1) DE3865037D1 (ko)
ES (1) ES2025288B3 (ko)
GR (1) GR3002804T3 (ko)
MX (1) MX165894B (ko)
WO (1) WO1988006139A1 (ko)

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US4929435A (en) * 1987-02-12 1990-05-29 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4960580A (en) * 1989-10-31 1990-10-02 E. I. Du Pont De Nemours And Company Process for purifying hydrogen fluoride
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US5089241A (en) * 1990-12-20 1992-02-18 Allied-Signal Inc. Process for converting hexafluoroarsenic acid or any salt thereof to arsenic acid or salt thereof which can then be rendered nonhazardous
US5108559A (en) * 1991-12-17 1992-04-28 E. I. Du Pont De Nemours And Company Process for purifying hydrogen fluoride
US6350425B2 (en) * 1994-01-07 2002-02-26 Air Liquide America Corporation On-site generation of ultra-high-purity buffered-HF and ammonium fluoride
US5846387A (en) * 1994-01-07 1998-12-08 Air Liquide Electronics Chemicals & Services, Inc. On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing
US5785820A (en) * 1994-01-07 1998-07-28 Startec Ventures, Inc. On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing
US5496778A (en) * 1994-01-07 1996-03-05 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component manufacture
US5722442A (en) * 1994-01-07 1998-03-03 Startec Ventures, Inc. On-site generation of ultra-high-purity buffered-HF for semiconductor processing
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CN1190913A (zh) * 1995-06-05 1998-08-19 斯塔泰克文切斯公司 用于半导体加工的超高纯氢氟酸的现场制造
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JPH11506411A (ja) * 1995-06-05 1999-06-08 スターテック・ベンチャーズ・インコーポレーテッド 電子部品製造の場合の使用現場でのアンモニアの精製
US6001223A (en) * 1995-07-07 1999-12-14 Air Liquide America Corporation On-site ammonia purification for semiconductor manufacture
AU7610796A (en) * 1995-11-13 1997-06-05 Allied-Signal Inc. Manufacture of very low arsenic hydrogen fluoride
US6214173B1 (en) 1996-06-05 2001-04-10 Air Liquide Electronics Chemicals & Services, Inc. On-site manufacture of ultra-high-purity nitric acid
DE10031563B4 (de) 2000-06-28 2009-01-29 Lanxess Deutschland Gmbh Verfahren zur Herstellung von perfluororganischen Verbindungen durch elektrochemische Fluorierung
DE10031565B4 (de) 2000-06-28 2006-02-23 Bulan, Andreas Verfahren zur Herstellung von perfluorierten organischen Verbindungen durch elektrochemische Fluorierung
US20080003172A1 (en) * 2006-06-29 2008-01-03 Honeywell International Inc. Continuous hydrolysis of hexafluoroarsenic acid
CN102232060B (zh) 2008-11-28 2013-11-06 国立大学法人京都大学 氟化氢的精制方法
CN102072833B (zh) * 2010-12-17 2012-07-25 扬州高能新材料有限公司 以icp-ms法测定高纯砷中杂质元素的制样方法
US8834830B2 (en) 2012-09-07 2014-09-16 Midwest Inorganics LLC Method for the preparation of anhydrous hydrogen halides, inorganic substances and/or inorganic hydrides by using as reactants inorganic halides and reducing agents
MX357878B (es) 2014-12-18 2018-07-27 Mexichem Fluor Sa De Capital Variable Proceso para la purificación del ácido fluorhídrico incluyendo la obtención del subproducto ácido arsenioso.
RU2653034C9 (ru) * 2017-06-01 2019-04-11 Общество с ограниченной ответственностью "Новые химические продукты" Способ извлечения фторида водорода из его водных растворов
CN110589770A (zh) * 2019-10-29 2019-12-20 浙江森田新材料有限公司 一种电子级氢氟酸的制备方法
CN115535965A (zh) * 2022-10-13 2022-12-30 云南氟磷电子科技有限公司 一种氢氟酸连续除砷的方法

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Also Published As

Publication number Publication date
KR950014205B1 (ko) 1995-11-23
WO1988006139A1 (en) 1988-08-25
US4756899A (en) 1988-07-12
AU609096B2 (en) 1991-04-26
JPH02502277A (ja) 1990-07-26
EP0280439B1 (en) 1991-09-25
ES2025288B3 (es) 1992-03-16
GR3002804T3 (en) 1993-01-25
MX165894B (es) 1992-12-03
JP2584505B2 (ja) 1997-02-26
EP0373163A1 (en) 1990-06-20
CA1305600C (en) 1992-07-28
DE3865037D1 (de) 1991-10-31
AU1297188A (en) 1988-09-14
EP0280439A1 (en) 1988-08-31

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