DE3865037D1 - Herstellung von wasserfreiem wasserstofffluorid von hoher reinheit mit einem niedrigen gehalt an arsen. - Google Patents

Herstellung von wasserfreiem wasserstofffluorid von hoher reinheit mit einem niedrigen gehalt an arsen.

Info

Publication number
DE3865037D1
DE3865037D1 DE8888301107T DE3865037T DE3865037D1 DE 3865037 D1 DE3865037 D1 DE 3865037D1 DE 8888301107 T DE8888301107 T DE 8888301107T DE 3865037 T DE3865037 T DE 3865037T DE 3865037 D1 DE3865037 D1 DE 3865037D1
Authority
DE
Germany
Prior art keywords
arsen
manufacture
content
low
hydrogen fluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888301107T
Other languages
English (en)
Inventor
Theodore John Jenczewski
Robert Lance Sturtevant
Thomas Richard Morgan
Barry John Boghean
Donald Christopher Butt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
AlliedSignal Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AlliedSignal Inc filed Critical AlliedSignal Inc
Application granted granted Critical
Publication of DE3865037D1 publication Critical patent/DE3865037D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/19Fluorine; Hydrogen fluoride
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/19Fluorine; Hydrogen fluoride
    • C01B7/191Hydrogen fluoride
    • C01B7/195Separation; Purification
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/19Fluorine; Hydrogen fluoride
    • C01B7/191Hydrogen fluoride
    • C01B7/195Separation; Purification
    • C01B7/196Separation; Purification by distillation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G28/00Compounds of arsenic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE8888301107T 1987-02-12 1988-02-10 Herstellung von wasserfreiem wasserstofffluorid von hoher reinheit mit einem niedrigen gehalt an arsen. Expired - Lifetime DE3865037D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/014,422 US4756899A (en) 1987-02-12 1987-02-12 Manufacture of high purity low arsenic anhydrous hydrogen fluoride

Publications (1)

Publication Number Publication Date
DE3865037D1 true DE3865037D1 (de) 1991-10-31

Family

ID=21765388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888301107T Expired - Lifetime DE3865037D1 (de) 1987-02-12 1988-02-10 Herstellung von wasserfreiem wasserstofffluorid von hoher reinheit mit einem niedrigen gehalt an arsen.

Country Status (11)

Country Link
US (1) US4756899A (de)
EP (2) EP0280439B1 (de)
JP (1) JP2584505B2 (de)
KR (1) KR950014205B1 (de)
AU (1) AU609096B2 (de)
CA (1) CA1305600C (de)
DE (1) DE3865037D1 (de)
ES (1) ES2025288B3 (de)
GR (1) GR3002804T3 (de)
MX (1) MX165894B (de)
WO (1) WO1988006139A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929435A (en) * 1987-02-12 1990-05-29 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4960580A (en) * 1989-10-31 1990-10-02 E. I. Du Pont De Nemours And Company Process for purifying hydrogen fluoride
US4990320A (en) * 1989-10-31 1991-02-05 E. I. Du Pont De Nemours And Company Process for purifying hydrogen fluoride
US4954330A (en) * 1989-11-30 1990-09-04 E. I. Dupont De Nemours And Company Process for purifying hydrogen fluoride
US5089241A (en) * 1990-12-20 1992-02-18 Allied-Signal Inc. Process for converting hexafluoroarsenic acid or any salt thereof to arsenic acid or salt thereof which can then be rendered nonhazardous
US5108559A (en) * 1991-12-17 1992-04-28 E. I. Du Pont De Nemours And Company Process for purifying hydrogen fluoride
US6350425B2 (en) * 1994-01-07 2002-02-26 Air Liquide America Corporation On-site generation of ultra-high-purity buffered-HF and ammonium fluoride
US5846387A (en) * 1994-01-07 1998-12-08 Air Liquide Electronics Chemicals & Services, Inc. On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing
US5785820A (en) * 1994-01-07 1998-07-28 Startec Ventures, Inc. On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing
US5496778A (en) * 1994-01-07 1996-03-05 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component manufacture
US5722442A (en) * 1994-01-07 1998-03-03 Startec Ventures, Inc. On-site generation of ultra-high-purity buffered-HF for semiconductor processing
JP2001527697A (ja) * 1995-06-05 2001-12-25 スターテック・ベンチャーズ・インコーポレーテッド 半導体プロセス用超高純度バッファードhfのオンサイト生成
KR100379887B1 (ko) * 1995-06-05 2003-06-12 스타텍 벤처스, 인코포레이티드 반도체제조용암모니아의온-사이트(on-site)정제
CN1190913A (zh) * 1995-06-05 1998-08-19 斯塔泰克文切斯公司 用于半导体加工的超高纯氢氟酸的现场制造
WO1996039264A1 (en) * 1995-06-05 1996-12-12 Startec Ventures, Inc. On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing
JPH11506411A (ja) * 1995-06-05 1999-06-08 スターテック・ベンチャーズ・インコーポレーテッド 電子部品製造の場合の使用現場でのアンモニアの精製
US6001223A (en) * 1995-07-07 1999-12-14 Air Liquide America Corporation On-site ammonia purification for semiconductor manufacture
AU7610796A (en) * 1995-11-13 1997-06-05 Allied-Signal Inc. Manufacture of very low arsenic hydrogen fluoride
US6214173B1 (en) 1996-06-05 2001-04-10 Air Liquide Electronics Chemicals & Services, Inc. On-site manufacture of ultra-high-purity nitric acid
DE10031563B4 (de) 2000-06-28 2009-01-29 Lanxess Deutschland Gmbh Verfahren zur Herstellung von perfluororganischen Verbindungen durch elektrochemische Fluorierung
DE10031565B4 (de) 2000-06-28 2006-02-23 Bulan, Andreas Verfahren zur Herstellung von perfluorierten organischen Verbindungen durch elektrochemische Fluorierung
US20080003172A1 (en) * 2006-06-29 2008-01-03 Honeywell International Inc. Continuous hydrolysis of hexafluoroarsenic acid
CN102232060B (zh) 2008-11-28 2013-11-06 国立大学法人京都大学 氟化氢的精制方法
CN102072833B (zh) * 2010-12-17 2012-07-25 扬州高能新材料有限公司 以icp-ms法测定高纯砷中杂质元素的制样方法
US8834830B2 (en) 2012-09-07 2014-09-16 Midwest Inorganics LLC Method for the preparation of anhydrous hydrogen halides, inorganic substances and/or inorganic hydrides by using as reactants inorganic halides and reducing agents
MX357878B (es) 2014-12-18 2018-07-27 Mexichem Fluor Sa De Capital Variable Proceso para la purificación del ácido fluorhídrico incluyendo la obtención del subproducto ácido arsenioso.
RU2653034C9 (ru) * 2017-06-01 2019-04-11 Общество с ограниченной ответственностью "Новые химические продукты" Способ извлечения фторида водорода из его водных растворов
CN110589770A (zh) * 2019-10-29 2019-12-20 浙江森田新材料有限公司 一种电子级氢氟酸的制备方法
CN115535965A (zh) * 2022-10-13 2022-12-30 云南氟磷电子科技有限公司 一种氢氟酸连续除砷的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD62309A (de) *
DE62309C (de) * Dr. R. HIRSCH in Berlin W., Potsdamerstr. 113 Verfahren zur Darstellung von Diphenylamin, o- und p-Amidodiphenyl
FR1335675A (fr) * 1961-07-27 1963-08-23 I C P M Ind Chimiche Porto Mar Procédé pour l'élimination de composés d'arsenic et d'antimoine de l'acide fluorhdrique moyennant la formation de complexes, facilement séparables, entre l'arsenic et l'antimoine, le fluor et un métal alcalin
BE632837A (de) * 1962-06-04 1963-10-21
US3689370A (en) * 1970-02-20 1972-09-05 Daikin Ind Ltd Process for purifying hydrofluoric acid by distillation with an oxidizing agent and a ferrous salt
US3687622A (en) * 1970-11-30 1972-08-29 Du Pont High pressure purification of hydrogen fluoride
US4032621A (en) * 1975-11-24 1977-06-28 E. I. Du Pont De Nemours And Company Preparation of hydrogen fluoride with low levels of arsenic, iron and sulfite
US4083941A (en) * 1977-04-18 1978-04-11 E. I. Du Pont De Nemours And Company Purification of anhydrous hydrogen fluoride
DE2942545A1 (de) * 1979-10-20 1981-06-04 Riedel-De Haen Ag, 3016 Seelze Verfahren zur herstellung einer gereinigten oxidationsbestaendigen anorganischen saeure und danach erhaltene saeure
US4491570A (en) * 1984-05-03 1985-01-01 Pennwalt Corporation Removal of arsenic from hydrogen fluoride
JPH0238521B2 (ja) * 1984-12-25 1990-08-30 Hashimoto Chemical Ind Futsukasuisosannoseiseiho

Also Published As

Publication number Publication date
KR950014205B1 (ko) 1995-11-23
WO1988006139A1 (en) 1988-08-25
KR890700538A (ko) 1989-04-25
US4756899A (en) 1988-07-12
AU609096B2 (en) 1991-04-26
JPH02502277A (ja) 1990-07-26
EP0280439B1 (de) 1991-09-25
ES2025288B3 (es) 1992-03-16
GR3002804T3 (en) 1993-01-25
MX165894B (es) 1992-12-03
JP2584505B2 (ja) 1997-02-26
EP0373163A1 (de) 1990-06-20
CA1305600C (en) 1992-07-28
AU1297188A (en) 1988-09-14
EP0280439A1 (de) 1988-08-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: HANSMANN & VOGESER, 81369 MUENCHEN