MY132240A - On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing - Google Patents

On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing

Info

Publication number
MY132240A
MY132240A MYPI96002210A MYPI9602210A MY132240A MY 132240 A MY132240 A MY 132240A MY PI96002210 A MYPI96002210 A MY PI96002210A MY PI9602210 A MYPI9602210 A MY PI9602210A MY 132240 A MY132240 A MY 132240A
Authority
MY
Malaysia
Prior art keywords
hydrofluoric acid
ultra
semiconductor processing
site manufacture
purity hydrofluoric
Prior art date
Application number
MYPI96002210A
Inventor
Joe G Hoffman
Scot R Clark
Original Assignee
Startec Ventures Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US1995/007649 external-priority patent/WO1996039358A1/en
Application filed by Startec Ventures Inc filed Critical Startec Ventures Inc
Publication of MY132240A publication Critical patent/MY132240A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D15/00—Separating processes involving the treatment of liquids with solid sorbents; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J39/00—Cation exchange; Use of material as cation exchangers; Treatment of material for improving the cation exchange properties
    • B01J39/04—Processes using organic exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/013—Separation; Purification; Concentration
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C01B7/197—Separation; Purification by adsorption
    • C01B7/198—Separation; Purification by adsorption by solid ion-exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/02—Preparation, purification or separation of ammonia
    • C01C1/024—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/16—Halides of ammonium
    • C01C1/162—Ammonium fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Abstract

A SYSTEM FOR PURIFICATION AND GENERATION OF HYDROFLUORIC ACID ONSITE AT A SEMICONDUCTOR DEVICE FABRICATION FACILITY. AN EVAPORATION STAGE (OPTIONALLY WITH ARSENIC OXIDATION) IS FOLLOWED BY A FRACTIONATING COLUMN TO REMOVE MOST OTHER IMPURITIES, AN IONIC PURIFIER COLUMN TO SUPPRESS CONTAMINANTS NOT REMOVED BY THE FRACTIONATING COLUMN, AND FINALLY THE HF SUPPLIER (HFS).
MYPI96002210A 1995-06-05 1996-06-05 On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing MY132240A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/US1995/007649 WO1996039358A1 (en) 1995-06-05 1995-06-05 Point-of-use ammonia purification for electronic component manufacture
US49941495A 1995-07-07 1995-07-07

Publications (1)

Publication Number Publication Date
MY132240A true MY132240A (en) 2007-09-28

Family

ID=26789684

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI96002210A MY132240A (en) 1995-06-05 1996-06-05 On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing

Country Status (6)

Country Link
JP (1) JPH11507001A (en)
KR (1) KR19990022226A (en)
CN (1) CN1190913A (en)
AU (1) AU6161896A (en)
MY (1) MY132240A (en)
WO (1) WO1996041687A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6224252B1 (en) 1998-07-07 2001-05-01 Air Products And Chemicals, Inc. Chemical generator with controlled mixing and concentration feedback and adjustment
US20010022957A1 (en) * 1999-12-30 2001-09-20 Subbanna Somanahalli Naranappa Purification of hydrogen fluoride
TW511180B (en) * 2000-07-31 2002-11-21 Mitsubishi Chem Corp Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device
JP2005281048A (en) * 2004-03-29 2005-10-13 Stella Chemifa Corp Method and apparatus for refining hydrofluoric acid
JP5595283B2 (en) * 2008-11-28 2014-09-24 国立大学法人京都大学 Method for purifying hydrogen fluoride
US9216364B2 (en) 2013-03-15 2015-12-22 Air Products And Chemicals, Inc. Onsite ultra high purity chemicals or gas purification
CN105786052B (en) 2014-12-16 2020-09-08 艺康美国股份有限公司 Online control and reaction method for pH adjustment
CN112010263B (en) * 2020-08-31 2022-08-02 北京化工大学 Production device and production method of electronic-grade hydrofluoric acid
CN114195099B (en) * 2021-12-16 2023-04-28 浙江博瑞电子科技有限公司 Method for preparing electronic grade hydrogen fluoride and electronic grade hydrofluoric acid by in-situ arsenic removal of multichannel microreactor
CN115487522B (en) * 2022-09-06 2023-06-23 内蒙古东岳金峰氟化工有限公司 Hydrogen fluoride purification system and process

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164049A (en) * 1986-10-06 1992-11-17 Athens Corporation Method for making ultrapure sulfuric acid
US4828660A (en) * 1986-10-06 1989-05-09 Athens Corporation Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids
US4756899A (en) * 1987-02-12 1988-07-12 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4929435A (en) * 1987-02-12 1990-05-29 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4952386A (en) * 1988-05-20 1990-08-28 Athens Corporation Method and apparatus for purifying hydrogen fluoride
US4980032A (en) * 1988-08-12 1990-12-25 Alameda Instruments, Inc. Distillation method and apparatus for reprocessing sulfuric acid
US5288333A (en) * 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
JPH05121390A (en) * 1991-10-29 1993-05-18 Koujiyundo Silicon Kk Removing method for acid
DE4135918A1 (en) * 1991-10-31 1993-05-06 Solvay Fluor Und Derivate Gmbh, 3000 Hannover, De MANUFACTURE OF HIGHLY PURE FLUORED HYDROGEN
US5500098A (en) * 1993-08-05 1996-03-19 Eco-Tec Limited Process for regeneration of volatile acids
US5496778A (en) * 1994-01-07 1996-03-05 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component manufacture

Also Published As

Publication number Publication date
WO1996041687A1 (en) 1996-12-27
CN1190913A (en) 1998-08-19
AU6161896A (en) 1997-01-09
KR19990022226A (en) 1999-03-25
JPH11507001A (en) 1999-06-22

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