AU6161896A - On-site manufacture of ultra-high-purity hydrofluoric acid f or semiconductor processing - Google Patents
On-site manufacture of ultra-high-purity hydrofluoric acid f or semiconductor processingInfo
- Publication number
- AU6161896A AU6161896A AU61618/96A AU6161896A AU6161896A AU 6161896 A AU6161896 A AU 6161896A AU 61618/96 A AU61618/96 A AU 61618/96A AU 6161896 A AU6161896 A AU 6161896A AU 6161896 A AU6161896 A AU 6161896A
- Authority
- AU
- Australia
- Prior art keywords
- ultra
- hydrofluoric acid
- semiconductor processing
- site manufacture
- purity hydrofluoric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/191—Hydrogen fluoride
- C01B7/195—Separation; Purification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D15/00—Separating processes involving the treatment of liquids with solid sorbents; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J39/00—Cation exchange; Use of material as cation exchangers; Treatment of material for improving the cation exchange properties
- B01J39/04—Processes using organic exchangers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/01—Hydrogen peroxide
- C01B15/013—Separation; Purification; Concentration
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/191—Hydrogen fluoride
- C01B7/195—Separation; Purification
- C01B7/197—Separation; Purification by adsorption
- C01B7/198—Separation; Purification by adsorption by solid ion-exchangers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/02—Preparation, purification or separation of ammonia
- C01C1/024—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/16—Halides of ammonium
- C01C1/162—Ammonium fluoride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1995/007649 WO1996039358A1 (en) | 1995-06-05 | 1995-06-05 | Point-of-use ammonia purification for electronic component manufacture |
WOUS9507649 | 1995-06-05 | ||
US49941495A | 1995-07-07 | 1995-07-07 | |
US499414 | 1995-07-07 | ||
PCT/US1996/009554 WO1996041687A1 (en) | 1995-06-05 | 1996-06-05 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
Publications (1)
Publication Number | Publication Date |
---|---|
AU6161896A true AU6161896A (en) | 1997-01-09 |
Family
ID=26789684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU61618/96A Abandoned AU6161896A (en) | 1995-06-05 | 1996-06-05 | On-site manufacture of ultra-high-purity hydrofluoric acid f or semiconductor processing |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH11507001A (en) |
KR (1) | KR19990022226A (en) |
CN (1) | CN1190913A (en) |
AU (1) | AU6161896A (en) |
MY (1) | MY132240A (en) |
WO (1) | WO1996041687A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6224252B1 (en) | 1998-07-07 | 2001-05-01 | Air Products And Chemicals, Inc. | Chemical generator with controlled mixing and concentration feedback and adjustment |
US20010022957A1 (en) * | 1999-12-30 | 2001-09-20 | Subbanna Somanahalli Naranappa | Purification of hydrogen fluoride |
TW511180B (en) * | 2000-07-31 | 2002-11-21 | Mitsubishi Chem Corp | Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
JP2005281048A (en) * | 2004-03-29 | 2005-10-13 | Stella Chemifa Corp | Method and apparatus for refining hydrofluoric acid |
WO2010061838A1 (en) * | 2008-11-28 | 2010-06-03 | 国立大学法人京都大学 | Hydrogen fluoride purification method |
US9216364B2 (en) | 2013-03-15 | 2015-12-22 | Air Products And Chemicals, Inc. | Onsite ultra high purity chemicals or gas purification |
CN105786052B (en) | 2014-12-16 | 2020-09-08 | 艺康美国股份有限公司 | Online control and reaction method for pH adjustment |
CN112010263B (en) * | 2020-08-31 | 2022-08-02 | 北京化工大学 | Production device and production method of electronic-grade hydrofluoric acid |
CN114195099B (en) * | 2021-12-16 | 2023-04-28 | 浙江博瑞电子科技有限公司 | Method for preparing electronic grade hydrogen fluoride and electronic grade hydrofluoric acid by in-situ arsenic removal of multichannel microreactor |
CN115487522B (en) * | 2022-09-06 | 2023-06-23 | 内蒙古东岳金峰氟化工有限公司 | Hydrogen fluoride purification system and process |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4828660A (en) * | 1986-10-06 | 1989-05-09 | Athens Corporation | Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids |
US5164049A (en) * | 1986-10-06 | 1992-11-17 | Athens Corporation | Method for making ultrapure sulfuric acid |
US4929435A (en) * | 1987-02-12 | 1990-05-29 | Allied-Signal Inc. | Manufacture of high purity low arsenic anhydrous hydrogen fluoride |
US4756899A (en) * | 1987-02-12 | 1988-07-12 | Allied-Signal Inc. | Manufacture of high purity low arsenic anhydrous hydrogen fluoride |
US4952386A (en) * | 1988-05-20 | 1990-08-28 | Athens Corporation | Method and apparatus for purifying hydrogen fluoride |
US4980032A (en) * | 1988-08-12 | 1990-12-25 | Alameda Instruments, Inc. | Distillation method and apparatus for reprocessing sulfuric acid |
US5288333A (en) * | 1989-05-06 | 1994-02-22 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method and apparatus therefore |
JPH05121390A (en) * | 1991-10-29 | 1993-05-18 | Koujiyundo Silicon Kk | Removing method for acid |
DE4135918A1 (en) * | 1991-10-31 | 1993-05-06 | Solvay Fluor Und Derivate Gmbh, 3000 Hannover, De | MANUFACTURE OF HIGHLY PURE FLUORED HYDROGEN |
US5500098A (en) * | 1993-08-05 | 1996-03-19 | Eco-Tec Limited | Process for regeneration of volatile acids |
US5496778A (en) * | 1994-01-07 | 1996-03-05 | Startec Ventures, Inc. | Point-of-use ammonia purification for electronic component manufacture |
-
1996
- 1996-06-05 MY MYPI96002210A patent/MY132240A/en unknown
- 1996-06-05 CN CN96194483A patent/CN1190913A/en active Pending
- 1996-06-05 WO PCT/US1996/009554 patent/WO1996041687A1/en not_active Application Discontinuation
- 1996-06-05 AU AU61618/96A patent/AU6161896A/en not_active Abandoned
- 1996-06-05 KR KR1019970708705A patent/KR19990022226A/en not_active Application Discontinuation
- 1996-06-05 JP JP8536848A patent/JPH11507001A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO1996041687A1 (en) | 1996-12-27 |
KR19990022226A (en) | 1999-03-25 |
CN1190913A (en) | 1998-08-19 |
JPH11507001A (en) | 1999-06-22 |
MY132240A (en) | 2007-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG71006A1 (en) | Fabrication process of soi substrate | |
AU6121294A (en) | Desiccant-coated substrate and method of manufacture | |
AU1316095A (en) | Method of determining nucleic acid hybridisation | |
SG55280A1 (en) | Fabrication process of semiconductor substrate | |
AU5969998A (en) | Semiconductor substrate and method of manufacturing the same | |
EP0628992A3 (en) | Method of making semiconductor wafers. | |
AU590187B2 (en) | Etched glass and process of manufacturing same | |
ITTO960063A0 (en) | SOLID AND ACID CLEANING BLOCK AND ITS PRODUCTION PROCEDURE | |
EP0660389A3 (en) | Method of manufacturing semiconductor devices having element separating regions | |
EP0762486A3 (en) | Etching of nitride crystal | |
EP0755068A3 (en) | Semiconductor substrate and process for production thereof | |
AU6329096A (en) | On-site ammonia purification for semiconductor manufacture | |
AU6103696A (en) | On-site generation of ultra-high-purity buffered hf for semi conductor processing | |
AU6161896A (en) | On-site manufacture of ultra-high-purity hydrofluoric acid f or semiconductor processing | |
GB2275364B (en) | Semiconductor etching process | |
NO964049D0 (en) | Process for the preparation of conductive fluorine doped titanium dioxide | |
AU6093496A (en) | On-site manufacture of ultra-high-purity nitric acid for sem iconductor processing | |
GB2297427B (en) | Process of fabricating semiconductor device | |
HUP0001497A3 (en) | Wafer product and process of manufacture | |
AU6178196A (en) | System and method for on-site mixing of ultra-high-purity ch emicals for semiconductor processing | |
AU5109696A (en) | Ozonizer and method of manufacturing it | |
EP0632495A3 (en) | Method of forming micro-trench isolation regions in the fabrication of semiconductor devices | |
AU6161996A (en) | On-site manufacture of ultra-high-purity hydrochloric acid f or semiconductor processing | |
EP0836536A4 (en) | On-site generation of ultra-high-purity buffered-hf for semiconductor processing | |
AU6448398A (en) | Batch fabricated semiconductor thin-film pressure sensor and method of making same |