AU6103696A - On-site generation of ultra-high-purity buffered hf for semi conductor processing - Google Patents

On-site generation of ultra-high-purity buffered hf for semi conductor processing

Info

Publication number
AU6103696A
AU6103696A AU61036/96A AU6103696A AU6103696A AU 6103696 A AU6103696 A AU 6103696A AU 61036/96 A AU61036/96 A AU 61036/96A AU 6103696 A AU6103696 A AU 6103696A AU 6103696 A AU6103696 A AU 6103696A
Authority
AU
Australia
Prior art keywords
ultra
semi conductor
site generation
conductor processing
purity buffered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU61036/96A
Inventor
R. Scot Clark
Joe G. Hoffman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Startec Ventures Inc
Original Assignee
Startec Ventures Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US1995/007649 external-priority patent/WO1996039358A1/en
Application filed by Startec Ventures Inc filed Critical Startec Ventures Inc
Publication of AU6103696A publication Critical patent/AU6103696A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J39/00—Cation exchange; Use of material as cation exchangers; Treatment of material for improving the cation exchange properties
    • B01J39/04—Processes using organic exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/013—Separation; Purification; Concentration
    • C01B15/0135—Purification by solid ion-exchangers or solid chelating agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C01B7/197—Separation; Purification by adsorption
    • C01B7/198—Separation; Purification by adsorption by solid ion-exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/02—Preparation, purification or separation of ammonia
    • C01C1/024—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/16—Halides of ammonium
    • C01C1/162—Ammonium fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
AU61036/96A 1995-06-05 1996-06-05 On-site generation of ultra-high-purity buffered hf for semi conductor processing Abandoned AU6103696A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
PCT/US1995/007649 WO1996039358A1 (en) 1995-06-05 1995-06-05 Point-of-use ammonia purification for electronic component manufacture
WOUS9507649 1995-06-05
US49956295A 1995-07-07 1995-07-07
US449562 1995-07-07
PCT/US1996/009556 WO1996039237A1 (en) 1995-06-05 1996-06-05 On-site generation of ultra-high-purity buffered hf for semiconductor processing

Publications (1)

Publication Number Publication Date
AU6103696A true AU6103696A (en) 1996-12-24

Family

ID=26789687

Family Applications (1)

Application Number Title Priority Date Filing Date
AU61036/96A Abandoned AU6103696A (en) 1995-06-05 1996-06-05 On-site generation of ultra-high-purity buffered hf for semi conductor processing

Country Status (4)

Country Link
JP (2) JPH11509980A (en)
CN (2) CN1089616C (en)
AU (1) AU6103696A (en)
WO (1) WO1996039237A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10236804A (en) * 1996-12-05 1998-09-08 Startec Ventures Inc System and method for producing ultrapure hydrogen peroxide on job site
FR2763931B1 (en) * 1997-05-27 1999-07-30 Chemoxal Sa PROCESS FOR THE PREPARATION OF AN ULTRAPURE HYDROGEN PEROXIDE SOLUTION BY ION EXCHANGE WITH RECYCLING
FR2763930B1 (en) 1997-05-27 1999-07-30 Chemoxal Sa PROCESS FOR PREPARING AN ULTRA-PURE HYDROGEN PEROXIDE SOLUTION BY IONIC SEQUENCE EXCHANGE: ANIONIC-CATIONIC-ANIONIC-CATIONIC
FR2763932B1 (en) * 1997-05-27 1999-07-30 Chemoxal Sa PROCESS FOR PREPARING AN ULTRA-PURE PEROXIDE SOLUTION BY IONIC EXCHANGE IN BEDS WITH DEFINED H / D RATIO
FR2763929B1 (en) * 1997-05-27 1999-07-30 Chemoxal Sa PROCESS FOR PREPARING AN ULTRA-PURE HYDROGEN PEROXIDE SOLUTION BY IONIC EXCHANGE IN THE PRESENCE OF ACETATE IONS
JPH11180704A (en) * 1997-12-19 1999-07-06 Ube Ind Ltd Production of aqueous high-purity hydrogen peroxide solution
DE19817794A1 (en) * 1998-04-21 1999-10-28 Basf Ag High purity aqueous hydrogen peroxide solution useful for electronic component substrate cleaning
US6224252B1 (en) 1998-07-07 2001-05-01 Air Products And Chemicals, Inc. Chemical generator with controlled mixing and concentration feedback and adjustment
US6416903B1 (en) * 1998-08-17 2002-07-09 Ovonic Battery Company, Inc. Nickel hydroxide electrode material and method for making the same
DE19926725A1 (en) * 1999-06-11 2000-12-14 Basf Ag Process for the implementation of organic compounds with hydrogen peroxide
US7091043B2 (en) 1999-12-10 2006-08-15 Showa Denko K.K. Method for measuring water concentration in ammonia
CN100372586C (en) * 2004-03-19 2008-03-05 冯留启 Method for preparing supper clean, and high pure reagent of acid and rectifier unit
CN103112872B (en) * 2013-02-18 2015-04-22 苏州晶瑞化学有限公司 Preparation method of ultrapure fluorine-ammonium etching solution for micro-electronics
CN104923518A (en) * 2015-04-24 2015-09-23 中建材浚鑫科技股份有限公司 Cleaning technology of graphite boat
JP6693963B2 (en) * 2015-08-10 2020-05-13 昭和電工株式会社 Method for producing hydrogen chloride
CN114783947B (en) * 2022-06-20 2022-10-11 晶芯成(北京)科技有限公司 Semiconductor device and method for manufacturing the same
CN116730288A (en) * 2023-07-03 2023-09-12 山东飞源东泰高分子材料有限公司 Hydrogen fluoride production and preparation system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870033A (en) * 1973-11-30 1975-03-11 Aqua Media Ultra pure water process and apparatus
US5164049A (en) * 1986-10-06 1992-11-17 Athens Corporation Method for making ultrapure sulfuric acid
US4952386A (en) * 1988-05-20 1990-08-28 Athens Corporation Method and apparatus for purifying hydrogen fluoride
US4980032A (en) * 1988-08-12 1990-12-25 Alameda Instruments, Inc. Distillation method and apparatus for reprocessing sulfuric acid
US4999179A (en) * 1988-12-26 1991-03-12 Mitsubishi Gas Chemical Company, Inc. Method for purifying impure aqueous hydrogen peroxide solution
CZ375092A3 (en) * 1992-01-10 1993-10-13 Rohm & Haas Column for ion-exchange process application
US5364510A (en) * 1993-02-12 1994-11-15 Sematech, Inc. Scheme for bath chemistry measurement and control for improved semiconductor wet processing

Also Published As

Publication number Publication date
JPH11509980A (en) 1999-08-31
JP2002514968A (en) 2002-05-21
CN1190360A (en) 1998-08-12
CN1082402C (en) 2002-04-10
WO1996039237A1 (en) 1996-12-12
CN1198102A (en) 1998-11-04
CN1089616C (en) 2002-08-28

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