AU6093496A - On-site manufacture of ultra-high-purity nitric acid for sem iconductor processing - Google Patents

On-site manufacture of ultra-high-purity nitric acid for sem iconductor processing

Info

Publication number
AU6093496A
AU6093496A AU60934/96A AU6093496A AU6093496A AU 6093496 A AU6093496 A AU 6093496A AU 60934/96 A AU60934/96 A AU 60934/96A AU 6093496 A AU6093496 A AU 6093496A AU 6093496 A AU6093496 A AU 6093496A
Authority
AU
Australia
Prior art keywords
ultra
processing
nitric acid
purity nitric
site manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU60934/96A
Inventor
R. Scot Clark
Joe G. Hoffman
Wallace I Yuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Startec Ventures Inc
Original Assignee
Startec Ventures Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Startec Ventures Inc filed Critical Startec Ventures Inc
Publication of AU6093496A publication Critical patent/AU6093496A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/02—Preparation, purification or separation of ammonia
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J39/00—Cation exchange; Use of material as cation exchangers; Treatment of material for improving the cation exchange properties
    • B01J39/04—Processes using organic exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/013—Separation; Purification; Concentration
    • C01B15/0135—Purification by solid ion-exchangers or solid chelating agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C01B7/197—Separation; Purification by adsorption
    • C01B7/198—Separation; Purification by adsorption by solid ion-exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/02—Preparation, purification or separation of ammonia
    • C01C1/024—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/16—Halides of ammonium
    • C01C1/162—Ammonium fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
AU60934/96A 1995-06-05 1996-06-05 On-site manufacture of ultra-high-purity nitric acid for sem iconductor processing Abandoned AU6093496A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/US1995/007649 WO1996039358A1 (en) 1995-06-05 1995-06-05 Point-of-use ammonia purification for electronic component manufacture
WO507649 1995-06-06
PCT/US1996/009215 WO1996039263A1 (en) 1995-06-05 1996-06-05 On-site manufacture of ultra-high-purity nitric acid for semiconductor processing

Publications (1)

Publication Number Publication Date
AU6093496A true AU6093496A (en) 1996-12-24

Family

ID=22249322

Family Applications (2)

Application Number Title Priority Date Filing Date
AU28624/95A Abandoned AU2862495A (en) 1995-06-05 1995-06-05 Point-of-use ammonia purification for electronic component m anufacture
AU60934/96A Abandoned AU6093496A (en) 1995-06-05 1996-06-05 On-site manufacture of ultra-high-purity nitric acid for sem iconductor processing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AU28624/95A Abandoned AU2862495A (en) 1995-06-05 1995-06-05 Point-of-use ammonia purification for electronic component m anufacture

Country Status (5)

Country Link
EP (2) EP0830316A1 (en)
JP (2) JPH11506411A (en)
KR (2) KR19990022281A (en)
AU (2) AU2862495A (en)
WO (2) WO1996039358A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7980753B2 (en) 1998-04-16 2011-07-19 Air Liquide Electronics U.S. Lp Systems and methods for managing fluids in a processing environment using a liquid ring pump and reclamation system
US7871249B2 (en) 1998-04-16 2011-01-18 Air Liquide Electronics U.S. Lp Systems and methods for managing fluids using a liquid ring pump
US6224252B1 (en) 1998-07-07 2001-05-01 Air Products And Chemicals, Inc. Chemical generator with controlled mixing and concentration feedback and adjustment
US7091043B2 (en) 1999-12-10 2006-08-15 Showa Denko K.K. Method for measuring water concentration in ammonia
US6576138B2 (en) * 2000-12-14 2003-06-10 Praxair Technology, Inc. Method for purifying semiconductor gases
KR101470311B1 (en) * 2013-07-24 2014-12-08 코아텍주식회사 System for purifying industrial ammonia
CN105786052B (en) 2014-12-16 2020-09-08 艺康美国股份有限公司 Online control and reaction method for pH adjustment
PL233084B1 (en) * 2015-07-14 2019-08-30 Inst Lotnictwa Single-stage method for obtaining HTP ( High Test Peroxide) class hydrogen peroxide for the driving applications and the system for obtaining it
CN105056563B (en) * 2015-08-11 2017-06-16 浙江尚能实业股份有限公司 A kind of nitric acid distillation system and its rectificating method
US20160296902A1 (en) 2016-06-17 2016-10-13 Air Liquide Electronics U.S. Lp Deterministic feedback blender
CN110589784B (en) * 2019-10-08 2021-11-23 中国计量科学研究院 Fine series purification system and purification method for laboratory-grade ultrapure nitric acid
KR102505203B1 (en) 2022-08-01 2023-03-02 제이엔에프주식회사 Ultra high purity nitric acid purification system with excellent nitric acid purification process waste heat recycling and without metal ion elution using reboiler made from tantalum

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401095A (en) * 1964-07-09 1968-09-10 Gnii Pi Azotnoj Method of purifying nitric acid
US3383173A (en) * 1965-12-30 1968-05-14 Chevron Res Ammonia purification
AT335251B (en) * 1975-03-10 1977-03-10 Ruthner Industrieanlagen Ag METHOD AND DEVICE FOR THE RECOVERY OF NITRIC ACID AND FLUID ACID FROM SOLUTIONS
US4828660A (en) * 1986-10-06 1989-05-09 Athens Corporation Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids
US5164049A (en) * 1986-10-06 1992-11-17 Athens Corporation Method for making ultrapure sulfuric acid
US4929435A (en) * 1987-02-12 1990-05-29 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4756899A (en) * 1987-02-12 1988-07-12 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
DD268230A1 (en) * 1987-12-28 1989-05-24 Dresden Komplette Chemieanlag PROCESS FOR CLEANING AMMONIA STEAM
US4952386A (en) * 1988-05-20 1990-08-28 Athens Corporation Method and apparatus for purifying hydrogen fluoride
SU1650579A1 (en) * 1988-07-18 1991-05-23 Ленинградский институт текстильной и легкой промышленности им.С.М.Кирова Method for purifying ammonia gas from oil and mechanical impurities
US4980032A (en) * 1988-08-12 1990-12-25 Alameda Instruments, Inc. Distillation method and apparatus for reprocessing sulfuric acid
US5288333A (en) * 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
US5242468A (en) * 1991-03-19 1993-09-07 Startec Ventures, Inc. Manufacture of high precision electronic components with ultra-high purity liquids
JPH05121390A (en) * 1991-10-29 1993-05-18 Koujiyundo Silicon Kk Removing method for acid
DE4135918A1 (en) * 1991-10-31 1993-05-06 Solvay Fluor Und Derivate Gmbh, 3000 Hannover, De MANUFACTURE OF HIGHLY PURE FLUORED HYDROGEN
US5500098A (en) * 1993-08-05 1996-03-19 Eco-Tec Limited Process for regeneration of volatile acids
US5496778A (en) * 1994-01-07 1996-03-05 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component manufacture

Also Published As

Publication number Publication date
JPH11506411A (en) 1999-06-08
KR19990022281A (en) 1999-03-25
EP0835168A1 (en) 1998-04-15
JPH11507004A (en) 1999-06-22
EP0830316A1 (en) 1998-03-25
WO1996039358A1 (en) 1996-12-12
KR19990022225A (en) 1999-03-25
AU2862495A (en) 1996-12-24
WO1996039263A1 (en) 1996-12-12
EP0835168A4 (en) 1998-08-26

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