EP0836536A4 - On-site generation of ultra-high-purity buffered-hf for semiconductor processing - Google Patents

On-site generation of ultra-high-purity buffered-hf for semiconductor processing

Info

Publication number
EP0836536A4
EP0836536A4 EP96922477A EP96922477A EP0836536A4 EP 0836536 A4 EP0836536 A4 EP 0836536A4 EP 96922477 A EP96922477 A EP 96922477A EP 96922477 A EP96922477 A EP 96922477A EP 0836536 A4 EP0836536 A4 EP 0836536A4
Authority
EP
European Patent Office
Prior art keywords
ultra
semiconductor processing
site generation
purity buffered
buffered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96922477A
Other languages
German (de)
French (fr)
Other versions
EP0836536A1 (en
Inventor
Joe G Hoffman
R Scot Clark
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide America Corp
Original Assignee
Startec Ventures Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26789686&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP0836536(A4) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from PCT/US1995/007649 external-priority patent/WO1996039358A1/en
Application filed by Startec Ventures Inc filed Critical Startec Ventures Inc
Publication of EP0836536A1 publication Critical patent/EP0836536A1/en
Publication of EP0836536A4 publication Critical patent/EP0836536A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/02—Preparation, purification or separation of ammonia
    • C01C1/024—Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D1/00—Evaporating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • C01B7/197—Separation; Purification by adsorption
    • C01B7/198—Separation; Purification by adsorption by solid ion-exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/16—Halides of ammonium
    • C01C1/162—Ammonium fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
EP96922477A 1995-06-05 1996-06-05 On-site generation of ultra-high-purity buffered-hf for semiconductor processing Withdrawn EP0836536A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
WOPCT/US95/07649 1995-06-05
PCT/US1995/007649 WO1996039358A1 (en) 1995-06-05 1995-06-05 Point-of-use ammonia purification for electronic component manufacture
US49942795A 1995-07-07 1995-07-07
US499427 1995-07-07
PCT/US1996/010388 WO1996039266A1 (en) 1995-06-05 1996-06-05 On-site generation of ultra-high-purity buffered-hf for semiconductor processing

Publications (2)

Publication Number Publication Date
EP0836536A1 EP0836536A1 (en) 1998-04-22
EP0836536A4 true EP0836536A4 (en) 1999-12-15

Family

ID=26789686

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96922477A Withdrawn EP0836536A4 (en) 1995-06-05 1996-06-05 On-site generation of ultra-high-purity buffered-hf for semiconductor processing

Country Status (5)

Country Link
EP (1) EP0836536A4 (en)
JP (1) JP2001527697A (en)
KR (1) KR100379886B1 (en)
AU (1) AU6333896A (en)
WO (1) WO1996039266A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7980753B2 (en) 1998-04-16 2011-07-19 Air Liquide Electronics U.S. Lp Systems and methods for managing fluids in a processing environment using a liquid ring pump and reclamation system
US6799883B1 (en) 1999-12-20 2004-10-05 Air Liquide America L.P. Method for continuously blending chemical solutions
US7871249B2 (en) 1998-04-16 2011-01-18 Air Liquide Electronics U.S. Lp Systems and methods for managing fluids using a liquid ring pump
US6224252B1 (en) 1998-07-07 2001-05-01 Air Products And Chemicals, Inc. Chemical generator with controlled mixing and concentration feedback and adjustment
DE19837041A1 (en) * 1998-08-14 2000-02-24 Messer Griesheim Gmbh Production of ready-to-use solutions
DE19905798A1 (en) * 1999-02-12 2000-08-17 Bayer Ag Process for the production of pure hydrofluoric acid
DE10115345A1 (en) * 2001-03-28 2002-10-02 Merck Patent Gmbh Process for the purification of corrosive gases
FR2834045B1 (en) * 2001-12-20 2004-05-28 Air Liquide Electronics Sys METHOD AND SYSTEM FOR PRODUCING A CHEMICAL SOLUTION FROM THE GASEOUS PHASE OF A CHEMICAL
KR100475272B1 (en) * 2002-06-29 2005-03-10 주식회사 하이닉스반도체 Manufacturing Method of Semiconductor Device
US20160296902A1 (en) 2016-06-17 2016-10-13 Air Liquide Electronics U.S. Lp Deterministic feedback blender
CN108609585A (en) * 2018-08-08 2018-10-02 宣城亨泰电子化学材料有限公司 A kind of hydrofluoric acid arsenic removal process

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4828660A (en) * 1986-10-06 1989-05-09 Athens Corporation Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids
US5164049A (en) * 1986-10-06 1992-11-17 Athens Corporation Method for making ultrapure sulfuric acid
US4929435A (en) * 1987-02-12 1990-05-29 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4756899A (en) * 1987-02-12 1988-07-12 Allied-Signal Inc. Manufacture of high purity low arsenic anhydrous hydrogen fluoride
US4952386A (en) * 1988-05-20 1990-08-28 Athens Corporation Method and apparatus for purifying hydrogen fluoride
US4980032A (en) * 1988-08-12 1990-12-25 Alameda Instruments, Inc. Distillation method and apparatus for reprocessing sulfuric acid
US5288333A (en) * 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
JPH05121390A (en) * 1991-10-29 1993-05-18 Koujiyundo Silicon Kk Removing method for acid
DE4135918A1 (en) * 1991-10-31 1993-05-06 Solvay Fluor Und Derivate Gmbh, 3000 Hannover, De MANUFACTURE OF HIGHLY PURE FLUORED HYDROGEN
US5500098A (en) * 1993-08-05 1996-03-19 Eco-Tec Limited Process for regeneration of volatile acids
US5496778A (en) * 1994-01-07 1996-03-05 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component manufacture

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *
See also references of WO9639266A1 *

Also Published As

Publication number Publication date
WO1996039266A1 (en) 1996-12-12
JP2001527697A (en) 2001-12-25
KR19990022227A (en) 1999-03-25
KR100379886B1 (en) 2003-06-19
AU6333896A (en) 1996-12-24
EP0836536A1 (en) 1998-04-22

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