KR900701418A - 표면 및 유체 청정 방법 - Google Patents

표면 및 유체 청정 방법

Info

Publication number
KR900701418A
KR900701418A KR1019900700002A KR900700002A KR900701418A KR 900701418 A KR900701418 A KR 900701418A KR 1019900700002 A KR1019900700002 A KR 1019900700002A KR 900700002 A KR900700002 A KR 900700002A KR 900701418 A KR900701418 A KR 900701418A
Authority
KR
South Korea
Prior art keywords
article
pressure
liquid
clean
clean fluid
Prior art date
Application number
KR1019900700002A
Other languages
English (en)
Inventor
와이. 에취. 리우 벤자민
안강호
Original Assignee
원본미기재
리전츠 오브 더 유니버시티 오브 미네소타
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 리전츠 오브 더 유니버시티 오브 미네소타 filed Critical 원본미기재
Priority claimed from PCT/US1989/002803 external-priority patent/WO1990015441A1/en
Publication of KR900701418A publication Critical patent/KR900701418A/ko

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/24—Treatment of water, waste water, or sewage by flotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

내용 없음

Description

표면 및 유체 청정 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 원리에 따라 구성된 표면 청정장치의 개략도.
제2도는 본 발명의 원리에 따라 구성된 장치의 제2실시예이며.
제3도는 본 발명의 원리에 따라 입자 아래 기포 형성을 보여주는 개략도이다.

Claims (7)

  1. 압력 안전 밸브를 갖는 압력 용기내에 물품을 놓고; 청정 유체가 물품의 표면을 침지 시키도록 청정유체를 압력 용기내에 도입하고: 압력 용기를 제1압력으로 가압하기 위한 가스를 청정유체에 도입하고: 제2압력이 압력용기 내에 실정되도록 압력 안전밸브를 활성화시키고, 제2압력이 제1압력 보다 낮은 값을 갖게하고, 표면으로부터 오염물을 제거하기 위한 기포가 표면상의 오염물 둘레에 자동적으로 형성되도록 압력 안전 밸브를 활성화시켜 압력용기 내에서 제1압력으로 부터 제2압력까지 즉시 저하되게 하여 오염물이 청정유체에 부유되도록 하고, 압력용기로 부터 청정유체를 배수하여 압력용기로 부터 부유 오염물을 제거하고 압력 용기내에 비교적 깨끗한 표면을 남기는 것으로 구성되는 물품의 표면을 청정하는 방법.
  2. 제1항에 있어서, 가스는 이산화탄소임을 특징으로 하는 방법.
  3. 제1항에 있어서, 청정유체는 이온제거되고 여과된 물임을 특징으로 하는 방법.
  4. 출구 오리피스를 갖는 압력용기에 액체를 도입하고. 가스를 압력용기에 도입하여 압력용기 내에 제1압력을 설정 하고; 액체와 가스가 압력 용기를 나와 입구측과 출구측을 갖는 제한 오리피스를·통과하도록하고, 제1압력값 보다 적은 제2압력값이 제한 오리피스의 출구측에 존재하도록 가스 및 액체가 제한 오리피스를 통과 함으로서 압력이 감소되게 하여 제산 오리피스의 출구측에서 액체내에 액체의 부유 미립물질 둘레에 형성되는 경향이 있으며 액체내에서 상승되는 경향이 있는 기포가 자동적으로 형성되게 하고: 상측 대역과 하측 대역으로 분할된 수집용기로 액체가 통과되게 하고: 수집용기의 상측대역에 액체를 수집하여 부유 미립물질을 함유하는 기포를 수집 용기로부터 제거하고: 수집용기의 하측 대역으로부터 액체를 배수하여 수집용기로 부터 비교적 깨끗한 액체를 제거하는 것으로 구성되는 부유 미립물질을 함유하는 액체를 청정하는 방법.
  5. 제4항에 있어서, 가스는 이산화탄소임을 특징으로 하는 방법.
  6. 물품이 체임버내에 지지되도록 물품을 위치시키고; 청정 유체가 청정하고자 하는 물품의 표면을 피복하여 청정하고자 하는 표면에 필름을 형성하도록 체임버내에 청정유체를 액체 상태로 도입하고: 유체가 물품의 표면에 동결되게 하여 물품의 표면과 물품의 표면의 바람직하지 않는 미립물질 사이의 부착력이 감소되게 하고: 동결된 청정유체가 물품의 표면으로부터 제거되도록 물품의 표연을 가열하여 미립물질을 청정유체의 매질을 통하여 물품의 표면으로부터 제거하는 것으로 구성되는 물품의 표면을 청정하는 방법.
  7. 물품이 체임버내에 지지되도록 물품을 위치시키고: 청정유체가 청정하고자 하는 물품의 표면을 피복하여 청정하고자 하는 표면에 필름을 형성하도록 체임버 내에 청정유체를 액체 상태로 도입하고: 청정점의 빙점이하의 온도를 갖는 가스를 체임버에 도입하여 유체가 물품의 표면에 동결되게 하여 물품의 표면과 물품의 표면의 바람직하지 않는 미립물질 사이의 부착력이 감소되게 하고: 동결된 청정유체가 물품의 표면으로부터 제거되도록 물품의 표면을 가열하여 미립물질을 청정유체의 매질을 통하여 물품의 표면으로부터 제거하는 것으로 구성되는 물품의 표면을 청정하는 방법.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019900700002A 1988-05-03 1988-08-16 표면 및 유체 청정 방법 KR900701418A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US189,627 1988-05-03
US07/189,627 US4962776A (en) 1987-03-26 1988-05-03 Process for surface and fluid cleaning
PCT/US1989/002803 WO1990015441A1 (en) 1989-06-01 1989-06-27 Laser dye liquids, laser dye instruments and methods

Publications (1)

Publication Number Publication Date
KR900701418A true KR900701418A (ko) 1990-12-03

Family

ID=22698122

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900700002A KR900701418A (ko) 1988-05-03 1988-08-16 표면 및 유체 청정 방법

Country Status (5)

Country Link
US (1) US4962776A (ko)
EP (1) EP0419464A1 (ko)
JP (1) JPH03503975A (ko)
KR (1) KR900701418A (ko)
WO (1) WO1989010803A1 (ko)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03184337A (ja) * 1989-11-13 1991-08-12 Applied Materials Inc 物品の指定表面から汚染粒子を除去する方法
US5456758A (en) * 1993-04-26 1995-10-10 Sematech, Inc. Submicron particle removal using liquid nitrogen
US5580394A (en) * 1993-07-12 1996-12-03 Airtronic, Inc. Method for cleaning industrial parts including sequential direct spray and immersion of the part
DE69523208T2 (de) * 1994-04-08 2002-06-27 Texas Instruments Inc Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase
JPH09509889A (ja) * 1994-12-27 1997-10-07 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 個々の構成部品をバルクで洗浄および乾燥する方法
JPH08238463A (ja) * 1995-03-03 1996-09-17 Ebara Corp 洗浄方法及び洗浄装置
US5679169A (en) * 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US6640816B2 (en) * 1999-01-22 2003-11-04 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US6350322B1 (en) * 1997-03-21 2002-02-26 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US6036786A (en) * 1997-06-11 2000-03-14 Fsi International Inc. Eliminating stiction with the use of cryogenic aerosol
JP2000012648A (ja) * 1998-06-17 2000-01-14 Ebara Corp 素子製造工程における基材表面保護方法及び装置
US6220934B1 (en) 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
US6090217A (en) 1998-12-09 2000-07-18 Kittle; Paul A. Surface treatment of semiconductor substrates
EP1058290A1 (en) * 1999-06-02 2000-12-06 Kaneka Corporation Method and apparatus for cleaning a semiconductor device
US6776171B2 (en) * 2001-06-27 2004-08-17 International Business Machines Corporation Cleaning of semiconductor wafers by contaminate encapsulation
US20030064158A1 (en) * 2001-10-03 2003-04-03 Thirkeldsen C. G. Method and apparatus for improving corrosion resistance of chrome plated material
US6808751B2 (en) * 2001-10-03 2004-10-26 Industrial Hard Chrome Method for improving corrosion resistance of chrome plated material
DE10255231B4 (de) * 2002-11-26 2006-02-02 Uhde High Pressure Technologies Gmbh Hochdruckvorrichtung zum Verschließen eines Druckbehälters im Reinraum
US6864458B2 (en) * 2003-01-21 2005-03-08 Applied Materials, Inc. Iced film substrate cleaning
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US8316866B2 (en) 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US20040261823A1 (en) * 2003-06-27 2004-12-30 Lam Research Corporation Method and apparatus for removing a target layer from a substrate using reactive gases
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US7799141B2 (en) 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US7737097B2 (en) 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
US8522801B2 (en) 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7645344B2 (en) * 2003-10-08 2010-01-12 Micron Technology, Inc. Method of cleaning semiconductor surfaces
US20050087490A1 (en) * 2003-10-28 2005-04-28 International Business Machines Corporation Process for removing impurities from low dielectric constant films disposed on semiconductor devices
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US8522799B2 (en) 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US8043441B2 (en) 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US7416370B2 (en) 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US7862662B2 (en) 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US7111517B2 (en) * 2004-07-29 2006-09-26 Agere Systems, Inc. Apparatus and method for in-situ measuring of vibrational energy in a process bath of a vibrational cleaning system
GB0417210D0 (en) * 2004-08-03 2004-09-01 Rolls Royce Plc Pressure treatment method
US20060254612A1 (en) * 2005-05-16 2006-11-16 Micron Technology, Inc. Polar fluid removal from surfaces using supercritical fluids
JP2006332396A (ja) * 2005-05-27 2006-12-07 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP4514700B2 (ja) * 2005-12-13 2010-07-28 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
EP2428557A1 (en) * 2005-12-30 2012-03-14 LAM Research Corporation Cleaning solution
US7946302B2 (en) * 2006-02-03 2011-05-24 George Koch Sons Llc Parts immersion apparatus and method
US7654010B2 (en) * 2006-02-23 2010-02-02 Tokyo Electron Limited Substrate processing system, substrate processing method, and storage medium
US20070221254A1 (en) * 2006-03-24 2007-09-27 Akira Izumi Substrate processing apparatus and substrate processing method
TW200739710A (en) * 2006-04-11 2007-10-16 Dainippon Screen Mfg Substrate processing method and substrate processing apparatus
JP4767138B2 (ja) * 2006-09-13 2011-09-07 大日本スクリーン製造株式会社 基板処理装置、液膜凍結方法および基板処理方法
JP4895774B2 (ja) * 2006-11-24 2012-03-14 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2008135557A (ja) * 2006-11-28 2008-06-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US8226775B2 (en) 2007-12-14 2012-07-24 Lam Research Corporation Methods for particle removal by single-phase and two-phase media
JP5243165B2 (ja) * 2008-09-25 2013-07-24 大日本スクリーン製造株式会社 基板洗浄方法および基板洗浄装置
TWI480937B (zh) 2011-01-06 2015-04-11 Screen Holdings Co Ltd 基板處理方法及基板處理裝置
JP5715831B2 (ja) 2011-01-20 2015-05-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN103187340B (zh) * 2011-12-28 2016-08-03 斯克林集团公司 基板处理装置以及基板处理方法
JP6090837B2 (ja) 2012-06-13 2017-03-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
FI3325183T3 (fi) 2015-07-23 2024-02-08 Renmatix Inc Menetelmä likaavan aineen poistamiseksi paineastiasta
JP6557625B2 (ja) * 2016-03-23 2019-08-07 東芝メモリ株式会社 基板の生産方法、および基板の生産システム
JP6653228B2 (ja) 2016-08-09 2020-02-26 キオクシア株式会社 基板の洗浄方法および基板処理装置
DE102021212978A1 (de) 2021-11-18 2023-05-25 Carl Zeiss Smt Gmbh Verfahren zur Bildgebung mit einem Rasterelektronenmikroskop sowie Rasterelektronenmikroskop zur Durchführung des Verfahrens

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2009278A (en) * 1931-12-09 1935-07-23 Oscar G Smidel Process for treating metals to prevent spotting out
US2679477A (en) * 1949-09-15 1954-05-25 Process Engineers Inc Sewage treatment
US3166445A (en) * 1961-08-21 1965-01-19 Danfoss Ved Ing M Clausen Method of drying hermetically enclosed refrigerating machines via special vapors
US3239438A (en) * 1962-05-21 1966-03-08 Ex Cell O Corp Method and apparatus for purifying electrolyte used in electro-chemical machining
US3410724A (en) * 1963-12-30 1968-11-12 Hercules Inc Cleaning or treating process
US3419427A (en) * 1965-12-15 1968-12-31 Gen Electric Method of cleaning soiled articles
US3733710A (en) * 1971-07-13 1973-05-22 Detrex Chem Ind Method for drying metal parts
US4186032A (en) * 1976-09-23 1980-01-29 Rca Corp. Method for cleaning and drying semiconductors
DE2806340A1 (de) * 1978-02-15 1979-08-30 Kloeckner Humboldt Deutz Ag Verfahren und vorrichtung zur abreinigung der matrix eines magnetscheiders, insbesondere eines nass-magnetscheiders
US4238244A (en) * 1978-10-10 1980-12-09 Halliburton Company Method of removing deposits from surfaces with a gas agitated cleaning liquid
SU870505A1 (ru) * 1980-01-09 1981-10-07 Предприятие П/Я М-5724 Способ очистки поверхности металлических изделий
US4501621A (en) * 1980-06-23 1985-02-26 Konishiroku Photo Industry Co., Ltd. Method for removing a selenium layer from a substrate
US4409034A (en) * 1981-11-24 1983-10-11 Mobile Companies, Inc. Cryogenic cleaning process
JPS5921458A (ja) * 1982-07-26 1984-02-03 Kawasaki Steel Corp 遠心鋳造用金型の冷却装置
JPS59139821A (ja) * 1983-01-28 1984-08-10 日本電信電話株式会社 自復形過電圧遮断回路
US4586962A (en) * 1983-09-27 1986-05-06 Gaf Corporation Surface cleaning process
JPS60108162A (ja) * 1983-11-16 1985-06-13 Hitachi Ltd 蒸気槽
JP2628297B2 (ja) * 1984-07-03 1997-07-09 新明和工業株式会社 ロボット制御方法およびその装置
US4622075A (en) * 1984-10-15 1986-11-11 Qo Chemicals, Inc. Metal cleaning
JPS62269096A (ja) * 1986-05-19 1987-11-21 株式会社日立製作所 除染方法
NL8601939A (nl) * 1986-07-28 1988-02-16 Philips Nv Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat.
JPS6468112A (en) * 1987-09-09 1989-03-14 Toyo Communication Equip Piezoelectric vibrator having adjusting function of oscillated frequency
JPH0683333A (ja) * 1992-09-02 1994-03-25 Roland Corp 空気流応答電子楽器
JPH0754285A (ja) * 1993-08-16 1995-02-28 Nippon Oil Co Ltd ロープ

Also Published As

Publication number Publication date
JPH03503975A (ja) 1991-09-05
EP0419464A1 (en) 1991-04-03
WO1989010803A1 (en) 1989-11-16
US4962776A (en) 1990-10-16

Similar Documents

Publication Publication Date Title
KR900701418A (ko) 표면 및 유체 청정 방법
CA2104164A1 (en) Immiscible Liquids Separator Apparatus and Method
CA2115813A1 (en) Method and device for the separation of a contaminated top layer
DE69628305D1 (de) Verfahren und vorrichtung zum abschöpfen einer schwimmenden oberflächenschicht einer wasseroberfläche
US3418236A (en) Flotation method and apparatus
SE9803322L (sv) Sätt och anordning för avskiljning av flytande fö roreningar
DE3071683D1 (en) Integrated flotation and filtration device and method for combined flotation and filtration
US4130489A (en) Apparatus for removing rainbows from flowing water
US4276181A (en) Process and apparatus for separation by coalescence of emulsions
KR860000242B1 (ko) 유체 처리장치 및 방법
JPS57207518A (en) Liquid filtering device
JPS5651216A (en) Separation of foreign matters by filter medium consisting of floating layer
JPS63110731A (ja) 半導体基板処理装置
SU1632949A1 (ru) Способ очистки нефтесодержащих сточных вод и устройство дл его осуществлени
FR2418013A1 (fr) Procede et dispositif de filtration
JP2001300239A (ja) 液体による排ガス粒子除去装置
SE9600490D0 (sv) Anordning för rening av skärvätskor
CN209475668U (zh) 污水处理刮泥系统
FR2263831A1 (en) Method of cleaning surfaces - uses high speed jet containing baryta to form bubbles which detach contamination
SU831742A1 (ru) Аппарат дл электрохимическойОчиСТКи зАгР зНЕННОй жидКОСТи
GB890133A (en) A process and device for contacting fluids with granular solids
JP2511106B2 (ja) 水処理装置
SU603404A1 (ru) Фильтр дл очистки подсланевых вод
SU1215732A1 (ru) Устройство дл автоматической регенерации вакуумного фильтра
JPS57117305A (en) Regeneration of oil-separating element

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application