KR900701418A - 표면 및 유체 청정 방법 - Google Patents

표면 및 유체 청정 방법

Info

Publication number
KR900701418A
KR900701418A KR1019900700002A KR900700002A KR900701418A KR 900701418 A KR900701418 A KR 900701418A KR 1019900700002 A KR1019900700002 A KR 1019900700002A KR 900700002 A KR900700002 A KR 900700002A KR 900701418 A KR900701418 A KR 900701418A
Authority
KR
South Korea
Prior art keywords
article
pressure
liquid
clean
clean fluid
Prior art date
Application number
KR1019900700002A
Other languages
English (en)
Inventor
와이. 에취. 리우 벤자민
안강호
Original Assignee
원본미기재
리전츠 오브 더 유니버시티 오브 미네소타
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 리전츠 오브 더 유니버시티 오브 미네소타 filed Critical 원본미기재
Priority claimed from PCT/US1989/002803 external-priority patent/WO1990015441A1/en
Publication of KR900701418A publication Critical patent/KR900701418A/ko

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/24—Treatment of water, waste water, or sewage by flotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

내용 없음

Description

표면 및 유체 청정 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 원리에 따라 구성된 표면 청정장치의 개략도.
제2도는 본 발명의 원리에 따라 구성된 장치의 제2실시예이며.
제3도는 본 발명의 원리에 따라 입자 아래 기포 형성을 보여주는 개략도이다.

Claims (7)

  1. 압력 안전 밸브를 갖는 압력 용기내에 물품을 놓고; 청정 유체가 물품의 표면을 침지 시키도록 청정유체를 압력 용기내에 도입하고: 압력 용기를 제1압력으로 가압하기 위한 가스를 청정유체에 도입하고: 제2압력이 압력용기 내에 실정되도록 압력 안전밸브를 활성화시키고, 제2압력이 제1압력 보다 낮은 값을 갖게하고, 표면으로부터 오염물을 제거하기 위한 기포가 표면상의 오염물 둘레에 자동적으로 형성되도록 압력 안전 밸브를 활성화시켜 압력용기 내에서 제1압력으로 부터 제2압력까지 즉시 저하되게 하여 오염물이 청정유체에 부유되도록 하고, 압력용기로 부터 청정유체를 배수하여 압력용기로 부터 부유 오염물을 제거하고 압력 용기내에 비교적 깨끗한 표면을 남기는 것으로 구성되는 물품의 표면을 청정하는 방법.
  2. 제1항에 있어서, 가스는 이산화탄소임을 특징으로 하는 방법.
  3. 제1항에 있어서, 청정유체는 이온제거되고 여과된 물임을 특징으로 하는 방법.
  4. 출구 오리피스를 갖는 압력용기에 액체를 도입하고. 가스를 압력용기에 도입하여 압력용기 내에 제1압력을 설정 하고; 액체와 가스가 압력 용기를 나와 입구측과 출구측을 갖는 제한 오리피스를·통과하도록하고, 제1압력값 보다 적은 제2압력값이 제한 오리피스의 출구측에 존재하도록 가스 및 액체가 제한 오리피스를 통과 함으로서 압력이 감소되게 하여 제산 오리피스의 출구측에서 액체내에 액체의 부유 미립물질 둘레에 형성되는 경향이 있으며 액체내에서 상승되는 경향이 있는 기포가 자동적으로 형성되게 하고: 상측 대역과 하측 대역으로 분할된 수집용기로 액체가 통과되게 하고: 수집용기의 상측대역에 액체를 수집하여 부유 미립물질을 함유하는 기포를 수집 용기로부터 제거하고: 수집용기의 하측 대역으로부터 액체를 배수하여 수집용기로 부터 비교적 깨끗한 액체를 제거하는 것으로 구성되는 부유 미립물질을 함유하는 액체를 청정하는 방법.
  5. 제4항에 있어서, 가스는 이산화탄소임을 특징으로 하는 방법.
  6. 물품이 체임버내에 지지되도록 물품을 위치시키고; 청정 유체가 청정하고자 하는 물품의 표면을 피복하여 청정하고자 하는 표면에 필름을 형성하도록 체임버내에 청정유체를 액체 상태로 도입하고: 유체가 물품의 표면에 동결되게 하여 물품의 표면과 물품의 표면의 바람직하지 않는 미립물질 사이의 부착력이 감소되게 하고: 동결된 청정유체가 물품의 표면으로부터 제거되도록 물품의 표연을 가열하여 미립물질을 청정유체의 매질을 통하여 물품의 표면으로부터 제거하는 것으로 구성되는 물품의 표면을 청정하는 방법.
  7. 물품이 체임버내에 지지되도록 물품을 위치시키고: 청정유체가 청정하고자 하는 물품의 표면을 피복하여 청정하고자 하는 표면에 필름을 형성하도록 체임버 내에 청정유체를 액체 상태로 도입하고: 청정점의 빙점이하의 온도를 갖는 가스를 체임버에 도입하여 유체가 물품의 표면에 동결되게 하여 물품의 표면과 물품의 표면의 바람직하지 않는 미립물질 사이의 부착력이 감소되게 하고: 동결된 청정유체가 물품의 표면으로부터 제거되도록 물품의 표면을 가열하여 미립물질을 청정유체의 매질을 통하여 물품의 표면으로부터 제거하는 것으로 구성되는 물품의 표면을 청정하는 방법.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019900700002A 1988-05-03 1988-08-16 표면 및 유체 청정 방법 KR900701418A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US189,627 1988-05-03
US07/189,627 US4962776A (en) 1987-03-26 1988-05-03 Process for surface and fluid cleaning
PCT/US1989/002803 WO1990015441A1 (en) 1989-06-01 1989-06-27 Laser dye liquids, laser dye instruments and methods

Publications (1)

Publication Number Publication Date
KR900701418A true KR900701418A (ko) 1990-12-03

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ID=22698122

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900700002A KR900701418A (ko) 1988-05-03 1988-08-16 표면 및 유체 청정 방법

Country Status (5)

Country Link
US (1) US4962776A (ko)
EP (1) EP0419464A1 (ko)
JP (1) JPH03503975A (ko)
KR (1) KR900701418A (ko)
WO (1) WO1989010803A1 (ko)

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JPH03503975A (ja) 1991-09-05
US4962776A (en) 1990-10-16
WO1989010803A1 (en) 1989-11-16
EP0419464A1 (en) 1991-04-03

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