KR900017142A - 반도체 소자와 산화성 물질의 소자를 구비하는 장치와 그 제조방법 - Google Patents

반도체 소자와 산화성 물질의 소자를 구비하는 장치와 그 제조방법 Download PDF

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KR900017142A
KR900017142A KR1019890005130A KR890005130A KR900017142A KR 900017142 A KR900017142 A KR 900017142A KR 1019890005130 A KR1019890005130 A KR 1019890005130A KR 890005130 A KR890005130 A KR 890005130A KR 900017142 A KR900017142 A KR 900017142A
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oxidizing material
oxidative
manufacturing
same
barrier layer
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KR1019890005130A
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린스 미데마 안드리에스
얀 반 데르 콜크 게르릿
필립 윌리암 베트라이스 듀샤뚜 죠안
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이반 밀러 레르너
엔.브이.필립스 글로아이람펜파브리켄
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Publication of KR900017142A publication Critical patent/KR900017142A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0744—Manufacture or deposition of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76891—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by using superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53285—Conductive materials containing superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/437—Superconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체 소자와 산화성 물질의 소자를 구비하는 장치와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도와 제2도는 본 발명에 따른 장치에 있어서의 전기 전도 커넥션의 상이한 실시예의 개략 단면도.

Claims (5)

  1. 반도체 소자와 산화성 물질의 소자를 구비하며, 이 반도체 소자와 산화성 소자 사이에 적어도 하나의 확산방지층을 갖는 전기 전도 커넥션이 형성된 장치에 있어서, 상기 확산 방지층은 화학식 AxE1-x의 비정질 합금으로 이루어졌으며, 여기서 A는 하나이상의 Zr,Nb,Mo,Ru,Rh,Pd,Hf,Ta,W,Re,Os,Ir,Pt원소에서 선택되고, E는 하나이상의 B,Si,Al,Gs,Ge원소에서 선택되고, X의 값은 0.7내지 0.95인 것을 특징으로하는 장치.
  2. 제1항에 있어서, E는 Si와 B로 이루어지며, 전체량은 5내지 30몰%인 것을 특징으로 하는 장치.
  3. 제1항 또는 제2항에 있어서, 상기 산화성 소자는 산화성 초전도 물질인 전도체 트랙인 것을 특징으로하는 장치.
  4. 제1항 또는 제2항에 있어서, 상기 산화성 소자는 세라믹 물질인 절연소자인 것을 특징으로 하는 장치.
  5. 바람직한 성질을 얻기 위해서 산화성 재료를 준비하여 가열시키는, 상기 항의 장치를 제조하는 방법에 있어서, 산화성 재료의 형성화된 틈을 통해 가열한 후에 전기 전도 커넥션이 제공되는 것을 특징으로 하는 장치 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890005130A 1988-04-21 1989-04-19 반도체 소자와 산화성 물질의 소자를 구비하는 장치와 그 제조방법 KR900017142A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8801032A NL8801032A (nl) 1988-04-21 1988-04-21 Inrichting en werkwijze voor het vervaardigen van een inrichting.
NL8801032 1988-04-21

Publications (1)

Publication Number Publication Date
KR900017142A true KR900017142A (ko) 1990-11-15

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Country Status (6)

Country Link
US (1) US5104848A (ko)
EP (1) EP0338631B1 (ko)
JP (1) JPH0215682A (ko)
KR (1) KR900017142A (ko)
DE (1) DE68918149T2 (ko)
NL (1) NL8801032A (ko)

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DE59208785D1 (de) * 1991-06-24 1997-09-11 Forschungszentrum Juelich Gmbh Strukturierte leiterbahnen und verfahren zur herstellung derselben
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KR100243286B1 (ko) * 1997-03-05 2000-03-02 윤종용 반도체 장치의 제조방법
JP3097646B2 (ja) * 1998-01-28 2000-10-10 日本電気株式会社 合金とその製造方法及びｘ線マスクとその製造方法及び半導体デバイスの製造方法
US6642567B1 (en) * 2000-08-31 2003-11-04 Micron Technology, Inc. Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
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US6826207B2 (en) * 2001-12-17 2004-11-30 Peleton Photonic Systems Inc. Multi-wavelength laser source based on two optical laser beat signal and method
JP2004319411A (ja) * 2003-04-21 2004-11-11 Mitsubishi Materials Corp マイクロマシンスイッチの接触電極用薄膜およびこの接触電極用薄膜を形成するためのスパッタリングターゲット
US8161811B2 (en) * 2009-12-18 2012-04-24 Honeywell International Inc. Flow sensors having nanoscale coating for corrosion resistance
US9252118B2 (en) * 2011-12-22 2016-02-02 Intel Corporation CMOS-compatible gold-free contacts
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Publication number Publication date
JPH0215682A (ja) 1990-01-19
DE68918149T2 (de) 1995-04-06
EP0338631B1 (en) 1994-09-14
DE68918149D1 (de) 1994-10-20
US5104848A (en) 1992-04-14
EP0338631A1 (en) 1989-10-25
NL8801032A (nl) 1989-11-16

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