KR890016625A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR890016625A
KR890016625A KR1019890004347A KR890004347A KR890016625A KR 890016625 A KR890016625 A KR 890016625A KR 1019890004347 A KR1019890004347 A KR 1019890004347A KR 890004347 A KR890004347 A KR 890004347A KR 890016625 A KR890016625 A KR 890016625A
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South Korea
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value
amorphous alloy
semiconductor device
superconducting material
manufacturing
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KR1019890004347A
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English (en)
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얀 반 데르 콜크 게르릿
시멘 발러 토이니스
담 베르나르드
디 로이스 로게르
빌렘 사리스 프란스
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이반 밀러 레르너
엔.브이.필립스 글로아이람펜파브리켄
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Publication of KR890016625A publication Critical patent/KR890016625A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0744—Manufacture or deposition of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/873—Active solid-state device
    • Y10S505/874—Active solid-state device with josephson junction, e.g. squid

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 및 제 2 도는 본 발명에 따른 장치내의 전기 전도 접속의 다른 실시예의 개략 단면도.

Claims (7)

  1. 반도체 소자와 산화 초전도 재료의 전도 트랙을 포함하며 전기 전도 접속이 반도체 소자와 전도 트랙 사이에서 형성되고 적어도 하나의 반확산층을 포함하는 반도체 장치에 있어서, 반확산층이 두 전이 금속의 비정질 합금으로 구성되며, 적어도 900K의 결정화 온도를 갖는 것을 특징으로 하는 반도체 장치.
  2. 제 1 항에 있어서, 비정질 합금은 AxB1-x'조성을 가지며, A는 Ti,Zr,Hf,Nb및 Ta으로부터 선택되었고 B는 Ir,Pd,및 Pt로부터 선택되었고 X값이 0.4 내지 0.8인 것을 특징으로 하는 반도체 장치.
  3. 제 2 항에 있어서, 비정질 합금은 TixIr1-x'로부터 선택한 것은 X값이 0.4 내지 0.8이며, NbxIr1-x'로부터 선택한 것은 X값이 0.4 내지 0.7이며, TaxIr1-x'로 부터 선택한 것은 X값이 0.4 내지 0.7인 것을 특징으로 하는 반도체 장치.
  4. 제 2 항에 있어서, 비정질 합금 HfxPd1-x'로부터 선택한 것은 X값이 0.5 내지 0.8이며, NbxPd1-x'로부터 선택한 것은 X값이 0.4 내지 0.75이며, TaxPd1-x'로부터 선택한 것은 X값이 0.4 내지 0.7인 것을 특징으로 하는 장치.
  5. 제 2 항에 있어서, 비정질 합금 TixPt1-x'로부터 선택한 것은 X값이 0.5 내지 0.8이며, ZrxPt1-x'로부터 선택한 것은 X값이 0.4 내지 0.7이며, HfxPt1-x'로부터 선택한 것은 X값이 0.4 내지 0.7이며, NbxPt1-x'로부터 선택한 것은 X값이 0.5 내지 0.8이며, TaxPt1-x'로부터 선택한 것은 X값이 0.4 내지 0.75인 것을 특징으로 하는 반도체 장치.
  6. 초전도 재료가 바람직한 초전도 특성을 얻도록 제공되어진 후에 연소된 제 1 항 내지 제 5 항중의 어느 한 항과 같은 반도체 장치 제조방법에 있어서, 전기 전도 접속은 패턴에 따라 제공된 초전도 재료내의 구멍을 거쳐 연소 후에 제공된 것을 특징으로 하는 반도체 장치 제조방법.
  7. 제 6 항에 있어서, 반도체 소자와 전도 트랙 사이에서 형태를 이루는 전기 절연층은 두 전이 금속의 비정질 합금으로부터 제조되며 상기 합금이 초전도 재료와 동시에 연소됨으로써 전기 절연 금속 산화물을 형성하는 것을 특징으로 하는 반도체장치 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890004347A 1988-04-05 1989-04-03 반도체 장치 및 그 제조방법 KR890016625A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8800857A NL8800857A (nl) 1988-04-05 1988-04-05 Inrichting en werkwijze voor het vervaardigen van een inrichting.
NL8800857 1988-04-05

Publications (1)

Publication Number Publication Date
KR890016625A true KR890016625A (ko) 1989-11-29

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Application Number Title Priority Date Filing Date
KR1019890004347A KR890016625A (ko) 1988-04-05 1989-04-03 반도체 장치 및 그 제조방법

Country Status (6)

Country Link
US (1) US5049543A (ko)
EP (1) EP0336505B1 (ko)
JP (1) JPH01302875A (ko)
KR (1) KR890016625A (ko)
DE (1) DE68911973T2 (ko)
NL (1) NL8800857A (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314850A (ja) * 1987-06-18 1988-12-22 Fujitsu Ltd 半導体装置
US5256897A (en) * 1988-11-28 1993-10-26 Hitachi, Ltd. Oxide superconducting device
US5274249A (en) * 1991-12-20 1993-12-28 University Of Maryland Superconducting field effect devices with thin channel layer
US5418214A (en) * 1992-07-17 1995-05-23 Northwestern University Cuprate-titanate superconductor and method for making
US5356474A (en) * 1992-11-27 1994-10-18 General Electric Company Apparatus and method for making aligned Hi-Tc tape superconductors
US5356833A (en) * 1993-04-05 1994-10-18 Motorola, Inc. Process for forming an intermetallic member on a semiconductor substrate
US6081182A (en) * 1996-11-22 2000-06-27 Matsushita Electric Industrial Co., Ltd. Temperature sensor element and temperature sensor including the same
US6642567B1 (en) * 2000-08-31 2003-11-04 Micron Technology, Inc. Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
EP2121992A4 (en) * 2007-02-13 2015-07-08 Univ Yale METHOD OF PRINTING AND DELETING PATTERNS ON AMORPHOUS METALLIC ALLOYS
US7951708B2 (en) * 2009-06-03 2011-05-31 International Business Machines Corporation Copper interconnect structure with amorphous tantalum iridium diffusion barrier
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
JPS55164860U (ko) * 1979-05-16 1980-11-27
JPS58110084A (ja) * 1981-12-24 1983-06-30 Mitsubishi Electric Corp ジヨセフソン素子
US4432134A (en) * 1982-05-10 1984-02-21 Rockwell International Corporation Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices
JPS603797B2 (ja) * 1982-05-29 1985-01-30 工業技術院長 ジヨセフソン・トンネル接合素子
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
JPS58212186A (ja) * 1983-05-06 1983-12-09 Hitachi Ltd ジヨセフソン接合装置
JPS60148178A (ja) * 1984-01-12 1985-08-05 Nippon Telegr & Teleph Corp <Ntt> トンネル形ジヨセフソン接合素子及びその製法
JPS616882A (ja) * 1984-06-21 1986-01-13 Agency Of Ind Science & Technol 超電導集積回路の端子電極とその製造方法
JPH0634414B2 (ja) * 1986-01-14 1994-05-02 富士通株式会社 超伝導デバイス
DE3810494C2 (de) * 1987-03-27 1998-08-20 Hitachi Ltd Integrierte Halbleiterschaltungseinrichtung mit supraleitender Schicht

Also Published As

Publication number Publication date
JPH01302875A (ja) 1989-12-06
DE68911973D1 (de) 1994-02-17
US5049543A (en) 1991-09-17
NL8800857A (nl) 1989-11-01
EP0336505B1 (en) 1994-01-05
EP0336505A1 (en) 1989-10-11
DE68911973T2 (de) 1994-07-07

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