KR910019276A - 박막저항체를 갖는 전자회로소자 및 그 제조방법 - Google Patents

박막저항체를 갖는 전자회로소자 및 그 제조방법 Download PDF

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KR910019276A
KR910019276A KR1019910006404A KR910006404A KR910019276A KR 910019276 A KR910019276 A KR 910019276A KR 1019910006404 A KR1019910006404 A KR 1019910006404A KR 910006404 A KR910006404 A KR 910006404A KR 910019276 A KR910019276 A KR 910019276A
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electronic circuit
circuit device
thin film
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film resistor
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아사오 나까노
가요시 오가따
마끼꼬 고노
야스노리 나리즈까
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
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  • Organic Chemistry (AREA)
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  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Adjustable Resistors (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
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Abstract

내용 없음

Description

박막저항체를 갖는 전자회로소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 회로 기판을 구성하는 박막저항체의 1실시예의 금속원자의 마이크로클러스 터영역 구조를 도식적으로 도시한 개념도, 제 2 도는 본 발명의 박막저항체의 1실시예에 대한 X선 회절패턴의 예를 도시한 그래프, 제 7 도는 본 발명의 박막저항체를 형성하기 위한 성막 장치의 구조를 도시한 개념도, 제 9 도는 본 발명의 영역 박막저항체를 사용한 발열 저항체 기판의 1실시예의 구조를 도시한 사시도.

Claims (20)

  1. 적어도 1개의 박막저항체와 이것을 지지하기 위한 기판을 갖는 전자회로에 있어서, 상기 박막저항체는 1종류의 원자를 주로 포함하고, 전기 전도성을 갖는 제 1 의 영역과 2종류의 원자로 이루어지는 화합물을 주로 포함하여 전기절연성을 나타내는 제 2 의 영역을 가지며, 상기 제 1 의 영역은 제 2 의 영역내에 산재하며, 또한 그 평균 입자 지름이 2nm내지 20nm의 범위인 전자회로소자.
  2. 특허청구의 범위 제 1 항에 있어서, 제 1 의 영역을 구성하는 원자는 Cr인 전자회로 소자.
  3. 특허청구의 범위 제 1 항에 있어서, 제 2 의 영역을 구성하는 2종류의 원자로 이루어지는 화합물은 Si와 O의 화합물인 전자회로소자.
  4. 특허청구의 범위 제 2 항에 있어서, 제 2 의 영역을 구성하는 2종류의 원자로 이루어지는 화합물은 SiO2인 전자회로소자.
  5. 특허청구의 범위 제 1 항에 있어서, 절연막을 또 가지며, 이 절연막은 그것이 마련되는 면을 피복해서 배치되는 전자회로소자.
  6. 특허청구의 범위 제 5 항에 있어서, 상기 절연막 위에 박막저항체가 마련되는 전자회로소자.
  7. 특허청구의 범위 제 6 항에 있어서, 도체막을 또 가지며, 이 도체막은 상기 절연막 위에 마련되는 전자회로소자.
  8. 특허청구의 범위 제 5 항에 있어서, 상기 절연막 위에 상기 박막 저항체 및 도체막을 마련한 것을 적층단위로하여 이것을 여러개 단위적충한 전자회로소자.
  9. 특허청구의 범위 제 8 항에 있어서, 상기 각 절연막에 스루홀을 갖는 전자회로소자.
  10. 특허청구의 범위 제 1 항에 있어서, 박막 저항체는 동일 기판 위에 여러개 병렬해서 마련되는 전자회로소자.
  11. 특허청구의 범위 제 10항에 있어서, 각 박막저항체는 그 양끝에 전극이 마련되어 발열소자를 구성하는 전자회로소자.
  12. 특허청구의 범위 제 11항에 있어서, 각 박막저항체는 제 1 의 영역을 구성하는 원자가 Cr이고, 제 2 의 영역을 구성하는 2종류의 원자로 이루어지는 화합물이 SiO2인 전자회로소자.
  13. 특허청구의 범위 제 12항에 있어서, 각 박막저항체의 양끝과 전극 사이에 전극을 구성하는 도체가 박막저항체내에 확산하는 것을 방지하기 위한 장벽 막을 갖는 전자회로소자.
  14. 기판위에 스피터링으로 성막하고, 이것을 패터닝해서 저항막으로 하는 전자회로소자의 제조방법에 있어서, Cr과 SiO2를 포함하는 타게트를 스피터링해서 성막하고, 성막후 350℃이상의 온도에서 열처리하는 전자회로소자의 제조방법.
  15. 특허청구의 범위 제 14항에 있어서, 타게트는 Cr과 SiO2가 혼합한 것의 소결체인 전자회로 소자의제조방법.
  16. 특허청구의 범위 제 14항에 있어서, 타게트는 Cr판위에 SiO2판을 부분적으로 배치한 전자회로소자의 제조 방법.
  17. 특허청구의 범위 제 14항에 있어서, 타게트의 표면의 Cr과 SiO2의 존재비를 변경해서 박막저항체의 비저항을 변화시키는 전자회로소자의 제조방법.
  18. 특허청구의 범위 제 13항에 있어서, 박막저항체가 감열기록헤드의 발열소자로써 사용되는 전자회로소자.
  19. 적어도 1개의 박막저항체와 이것을 지지하기 위한 기판을 갖는 전자회로소자에 있어서, 상기 박막저항체는 Cr을 갖는 제 1 의 영역과 SiO2를 갖는 제 2 의 영역을 가지며, 상기 제 1 의 영역은 제 2 의 영역내에 산재하며, 또한 그 평균입자지름이 2nm을 넘는 전자회로소자.
  20. 특허청구의 범위 제 19항에 있어서, Cr원자가 비정질의 마이크로클러스 비영역을 형성하고, SiO2가 비정질 구조영역을 형성하고 있는 전자회로소자.
    ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.
KR1019910006404A 1990-04-24 1991-04-22 박막저항체를 갖는 전자회로소자 및 그 제조방법 KR960005321B1 (ko)

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JP2-107758 1990-04-24
JP10775890 1990-04-24

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KR960005321B1 KR960005321B1 (ko) 1996-04-23

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JP (1) JPH04218901A (ko)
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DE (1) DE4113372C2 (ko)

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EP0736881B1 (de) * 1995-03-09 2000-05-24 Philips Patentverwaltung GmbH Elektrisches Widerstandsbauelement mit CrSi-Widerstandsschicht
US6208234B1 (en) * 1998-04-29 2001-03-27 Morton International Resistors for electronic packaging
WO2001093283A1 (en) * 2000-06-02 2001-12-06 Koninklijke Philips Electronics N.V. Passive component
US8680443B2 (en) 2004-01-06 2014-03-25 Watlow Electric Manufacturing Company Combined material layering technologies for electric heaters
US11393752B2 (en) 2019-03-20 2022-07-19 Rohm Co., Ltd. Electronic component
JP7440212B2 (ja) * 2019-03-27 2024-02-28 ローム株式会社 薄膜抵抗およびその製造方法、ならびに、薄膜抵抗を備えた電子部品

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DE271044C (ko) *
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SE364591B (ko) * 1968-11-19 1974-02-25 Western Electric Co
US4010312A (en) * 1975-01-23 1977-03-01 Rca Corporation High resistance cermet film and method of making the same
DE2724498C2 (de) * 1977-05-31 1982-06-03 Siemens AG, 1000 Berlin und 8000 München Elektrischer Schichtwiderstand und Verfahren zu seiner Herstellung
DE2833919C2 (de) * 1978-08-02 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von elektrischen Schichtschaltungen auf Kunststoffolien
JPS56130374A (en) * 1980-03-19 1981-10-13 Hitachi Ltd Thermal head
JPS5884401A (ja) * 1981-11-13 1983-05-20 株式会社日立製作所 抵抗体
JPS6256160A (ja) * 1985-09-06 1987-03-11 Mitsubishi Electric Corp サ−マルヘツド
JPS6256159A (ja) * 1985-09-06 1987-03-11 Toshiba Corp サ−マルヘツド
JPS62119272A (ja) * 1985-11-19 1987-05-30 Mitsubishi Petrochem Co Ltd 樹脂抵抗体
US5068756A (en) * 1989-02-16 1991-11-26 Texas Instruments Incorporated Integrated circuit composed of group III-V compound field effect and bipolar semiconductors

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KR960005321B1 (ko) 1996-04-23
US5218335A (en) 1993-06-08
DE4113372C2 (de) 2000-07-27
DE4113372A1 (de) 1991-10-31
JPH04218901A (ja) 1992-08-10

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