KR900016060A - 전자용도의 저연화점산화금속유리 - Google Patents

전자용도의 저연화점산화금속유리 Download PDF

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KR900016060A
KR900016060A KR1019900005179A KR900005179A KR900016060A KR 900016060 A KR900016060 A KR 900016060A KR 1019900005179 A KR1019900005179 A KR 1019900005179A KR 900005179 A KR900005179 A KR 900005179A KR 900016060 A KR900016060 A KR 900016060A
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oxide
weight percent
low softening
weight
softening point
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KR1019900005179A
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KR920010092B1 (ko
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델버틀 프리센 지.
케이. 신 윤
호프먼 루이스
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허버트 제이. 범가튼
내쇼날 스타치 앤드 케미칼 코포레이숀
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    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
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Abstract

내용 없음.

Description

전자용도의 저연화점산화금속유리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. 2내지 40중량%의 산화은, 12내지 40중량%의 산화바나듐, 35내지 75중량%의 산화렐루륨 및 2내지 30중량%의 산화납으로서, 그 중량%의 합은 100으로 이루어지는 저연화점 유리조성물.
  2. 제1항에 있어서, 오산화인, 산화텅스텐, 산화규소 산화구리, 산화알루미늄, 산화비스무스, 산화주석, 산화아연, 산화탈륨, 산화비소, 산화몰리브덴, 산화티타늄, 및 산화안티몬의 군에서 선정되는 1종 이상의 산화물 10중량%이하를 더 함유하는 저연화점 유리조성물.
  3. (a)은.금 및 백금의 군에서 선정된 하나의 금속과 (b)2내지 40중량%의 산화은, 12내지 40중량%의 산화바나듐, 35내지 75중량%의 산화텔루륨 및 2내지 30중량%의 산화납으로서, 그 중량%의 합은 100으로 이루어지는 분말상의 저연화점유 유리조성물의 혼합물로 이루어지며, 그 혼합물의 피크인화온도는 400℃이하이며, (a)/(b)의 혼합비는 4 : 1내지 100 : 1인 다이부착접착제 조성물.
  4. 제3항에 있어서, 금속은 박편금속, 분말상금속 또는 이들의 혼합물의 군에서 선정되는 다이부착접착제 조성물.
  5. 제3항에 있어서, 유리조성물은 오산화인, 산화텅스텐, 산화규소, 산화구리, 산화알루미늄, 산화비스무스, 산화주석, 산화아연, 산화탈륨, 산화비소, 산화몰리브덴, 산화티타늄 및 산화안티몬의 군에서 선정되는 1종 이상의 산화물 10중량%이하를 더 함유하는 다이부착접착제 조성물.
  6. 제1항의 저연화점조성물로 이루어지는 밀봉유리.
  7. 제6항에 있어서, 유리의 열팽창계수가 저감되도록 유효량의 팽창, 변성충진제를 더 함유하는 밀봉유리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900005179A 1989-04-19 1990-04-14 전자용도의 저연화점산화금속유리 KR920010092B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US340183 1989-04-19
US340,183 1989-04-19
US07/340,183 US4945071A (en) 1989-04-19 1989-04-19 Low softening point metallic oxide glasses suitable for use in electronic applications

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KR900016060A true KR900016060A (ko) 1990-11-12
KR920010092B1 KR920010092B1 (ko) 1992-11-14

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US (1) US4945071A (ko)
EP (1) EP0393416B1 (ko)
JP (1) JP2703385B2 (ko)
KR (1) KR920010092B1 (ko)
DE (1) DE69002078T2 (ko)
HK (1) HK123293A (ko)
PH (1) PH27455A (ko)

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KR101414091B1 (ko) * 2010-08-11 2014-07-02 가부시끼가이샤 히다치 세이사꾸쇼 전극용 글래스 조성물, 및 그것을 이용한 전극용 페이스트, 및 그것을 적용한 전자 부품
US8889979B2 (en) 2010-05-04 2014-11-18 E I Du Pont De Nemours And Company Thick-film pastes containing lead—tellurium—lithium—titanium—oxides, and their use in the manufacture of semiconductor devices
US10658528B2 (en) 2017-04-18 2020-05-19 Dupont Electronics, Inc. Conductive paste composition and semiconductor devices made therewith

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JP5559510B2 (ja) 2009-10-28 2014-07-23 昭栄化学工業株式会社 太陽電池素子及びその製造方法
JP5559509B2 (ja) * 2009-10-28 2014-07-23 昭栄化学工業株式会社 太陽電池電極形成用導電性ペースト
DE102010006072A1 (de) * 2010-01-28 2011-08-18 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Halbleiterbauteil und Verwendung eines optoelektronischen Halbleiterbauteils in einem Kfz-Schweinwerfer
JP5011428B2 (ja) * 2010-10-07 2012-08-29 昭栄化学工業株式会社 太陽電池素子並びにその製造方法
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JP5726698B2 (ja) * 2011-07-04 2015-06-03 株式会社日立製作所 ガラス組成物、それを含むガラスフリット、それを含むガラスペースト、およびそれを利用した電気電子部品
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EP0393416B1 (en) 1993-06-30
PH27455A (en) 1993-07-02
JP2703385B2 (ja) 1998-01-26
HK123293A (en) 1993-11-19
EP0393416A1 (en) 1990-10-24
KR920010092B1 (ko) 1992-11-14
US4945071A (en) 1990-07-31
DE69002078T2 (de) 1993-10-21
DE69002078D1 (de) 1993-08-05

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