KR900016060A - 전자용도의 저연화점산화금속유리 - Google Patents
전자용도의 저연화점산화금속유리 Download PDFInfo
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- KR900016060A KR900016060A KR1019900005179A KR900005179A KR900016060A KR 900016060 A KR900016060 A KR 900016060A KR 1019900005179 A KR1019900005179 A KR 1019900005179A KR 900005179 A KR900005179 A KR 900005179A KR 900016060 A KR900016060 A KR 900016060A
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- oxide
- weight percent
- low softening
- weight
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/838—Bonding techniques
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- H01L2924/078—Adhesive characteristics other than chemical
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
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- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (7)
- 2내지 40중량%의 산화은, 12내지 40중량%의 산화바나듐, 35내지 75중량%의 산화렐루륨 및 2내지 30중량%의 산화납으로서, 그 중량%의 합은 100으로 이루어지는 저연화점 유리조성물.
- 제1항에 있어서, 오산화인, 산화텅스텐, 산화규소 산화구리, 산화알루미늄, 산화비스무스, 산화주석, 산화아연, 산화탈륨, 산화비소, 산화몰리브덴, 산화티타늄, 및 산화안티몬의 군에서 선정되는 1종 이상의 산화물 10중량%이하를 더 함유하는 저연화점 유리조성물.
- (a)은.금 및 백금의 군에서 선정된 하나의 금속과 (b)2내지 40중량%의 산화은, 12내지 40중량%의 산화바나듐, 35내지 75중량%의 산화텔루륨 및 2내지 30중량%의 산화납으로서, 그 중량%의 합은 100으로 이루어지는 분말상의 저연화점유 유리조성물의 혼합물로 이루어지며, 그 혼합물의 피크인화온도는 400℃이하이며, (a)/(b)의 혼합비는 4 : 1내지 100 : 1인 다이부착접착제 조성물.
- 제3항에 있어서, 금속은 박편금속, 분말상금속 또는 이들의 혼합물의 군에서 선정되는 다이부착접착제 조성물.
- 제3항에 있어서, 유리조성물은 오산화인, 산화텅스텐, 산화규소, 산화구리, 산화알루미늄, 산화비스무스, 산화주석, 산화아연, 산화탈륨, 산화비소, 산화몰리브덴, 산화티타늄 및 산화안티몬의 군에서 선정되는 1종 이상의 산화물 10중량%이하를 더 함유하는 다이부착접착제 조성물.
- 제1항의 저연화점조성물로 이루어지는 밀봉유리.
- 제6항에 있어서, 유리의 열팽창계수가 저감되도록 유효량의 팽창, 변성충진제를 더 함유하는 밀봉유리.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US340183 | 1989-04-19 | ||
US340,183 | 1989-04-19 | ||
US07/340,183 US4945071A (en) | 1989-04-19 | 1989-04-19 | Low softening point metallic oxide glasses suitable for use in electronic applications |
Publications (2)
Publication Number | Publication Date |
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KR900016060A true KR900016060A (ko) | 1990-11-12 |
KR920010092B1 KR920010092B1 (ko) | 1992-11-14 |
Family
ID=23332249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900005179A KR920010092B1 (ko) | 1989-04-19 | 1990-04-14 | 전자용도의 저연화점산화금속유리 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4945071A (ko) |
EP (1) | EP0393416B1 (ko) |
JP (1) | JP2703385B2 (ko) |
KR (1) | KR920010092B1 (ko) |
DE (1) | DE69002078T2 (ko) |
HK (1) | HK123293A (ko) |
PH (1) | PH27455A (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101414091B1 (ko) * | 2010-08-11 | 2014-07-02 | 가부시끼가이샤 히다치 세이사꾸쇼 | 전극용 글래스 조성물, 및 그것을 이용한 전극용 페이스트, 및 그것을 적용한 전자 부품 |
US8889979B2 (en) | 2010-05-04 | 2014-11-18 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead—tellurium—lithium—titanium—oxides, and their use in the manufacture of semiconductor devices |
US10658528B2 (en) | 2017-04-18 | 2020-05-19 | Dupont Electronics, Inc. | Conductive paste composition and semiconductor devices made therewith |
Families Citing this family (50)
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JPH04270140A (ja) * | 1990-06-21 | 1992-09-25 | Johnson Matthey Inc | シーリングガラス組成物および導電性成分を含む同組成物 |
US5013697A (en) * | 1990-06-21 | 1991-05-07 | Johnson Matthey Inc. | Sealing glass compositions |
GB9015072D0 (en) * | 1990-07-09 | 1990-08-29 | Cookson Group Plc | Glass composition |
JPH04202710A (ja) * | 1990-11-30 | 1992-07-23 | Daido Steel Co Ltd | 真空精錬方法 |
WO1993002980A1 (en) * | 1991-08-07 | 1993-02-18 | Vlsi Packaging Materials, Inc. | Low temperature lead vanadium sealing glass compositions |
DE4128804A1 (de) * | 1991-08-30 | 1993-03-04 | Demetron | Bleifreies, niedrigschmelzendes glas |
US5188990A (en) * | 1991-11-21 | 1993-02-23 | Vlsi Packaging Materials | Low temperature sealing glass compositions |
US5334558A (en) * | 1992-10-19 | 1994-08-02 | Diemat, Inc. | Low temperature glass with improved thermal stress properties and method of use |
US5663109A (en) * | 1992-10-19 | 1997-09-02 | Quantum Materials, Inc. | Low temperature glass paste with high metal to glass ratio |
US5648302A (en) * | 1996-09-13 | 1997-07-15 | Sandia Corporation | Sealing glasses for titanium and titanium alloys |
US5693580A (en) * | 1996-09-13 | 1997-12-02 | Sandia Corporation | Titanium sealing glasses and seals formed therefrom |
US6376399B1 (en) * | 2000-01-24 | 2002-04-23 | Corning Incorporated | Tungstate, molybdate, vanadate base glasses |
US6664567B2 (en) * | 2001-06-28 | 2003-12-16 | Kyocera Corporation | Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon |
WO2003023460A2 (en) * | 2001-09-07 | 2003-03-20 | Shipley Company, Llc | Glass bonded fiber array and method for the fabrication thereof |
US7009213B2 (en) * | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
TWI251455B (en) * | 2004-07-06 | 2006-03-11 | Advanced Semiconductor Eng | A manufacturing method of a multi-layer circuit board with embedded passive components |
US7419839B2 (en) | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
KR100772501B1 (ko) * | 2005-06-30 | 2007-11-01 | 한국전자통신연구원 | 텔루라이트 유리 조성물, 이를 이용한 광도파로 및광증폭기 |
DE102009036395A1 (de) * | 2009-04-30 | 2010-11-04 | Osram Opto Semiconductors Gmbh | Bauteil mit einem ersten und einem zweiten Substrat und Verfahren zu dessen Herstellung |
JP5559510B2 (ja) | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池素子及びその製造方法 |
JP5559509B2 (ja) * | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池電極形成用導電性ペースト |
DE102010006072A1 (de) * | 2010-01-28 | 2011-08-18 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Halbleiterbauteil und Verwendung eines optoelektronischen Halbleiterbauteils in einem Kfz-Schweinwerfer |
JP5011428B2 (ja) * | 2010-10-07 | 2012-08-29 | 昭栄化学工業株式会社 | 太陽電池素子並びにその製造方法 |
CA2830054C (en) | 2011-04-21 | 2017-07-11 | Shoei Chemical Inc. | Conductive paste |
JP6027171B2 (ja) * | 2011-07-04 | 2016-11-16 | 株式会社日立製作所 | 封着用ガラスフリット、封着用ガラスペースト、導電性ガラスペースト、およびそれらを利用した電気電子部品 |
JP5726698B2 (ja) * | 2011-07-04 | 2015-06-03 | 株式会社日立製作所 | ガラス組成物、それを含むガラスフリット、それを含むガラスペースト、およびそれを利用した電気電子部品 |
JP5816565B2 (ja) * | 2012-01-26 | 2015-11-18 | 株式会社日立産機システム | インク、被印字基材、印字装置、印字方法、被印字基材の製造方法 |
JP5732414B2 (ja) * | 2012-01-26 | 2015-06-10 | 株式会社日立製作所 | 接合体および半導体モジュール |
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US4743302A (en) * | 1986-06-06 | 1988-05-10 | Vlsi Packaging Materials, Inc. | Low melting glass composition |
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1989
- 1989-04-19 US US07/340,183 patent/US4945071A/en not_active Expired - Lifetime
-
1990
- 1990-04-03 DE DE90106384T patent/DE69002078T2/de not_active Expired - Fee Related
- 1990-04-03 EP EP90106384A patent/EP0393416B1/en not_active Expired - Lifetime
- 1990-04-04 PH PH40325A patent/PH27455A/en unknown
- 1990-04-14 KR KR1019900005179A patent/KR920010092B1/ko not_active IP Right Cessation
- 1990-04-18 JP JP2100557A patent/JP2703385B2/ja not_active Expired - Lifetime
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1993
- 1993-11-11 HK HK1232/93A patent/HK123293A/xx not_active IP Right Cessation
Cited By (9)
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US8889979B2 (en) | 2010-05-04 | 2014-11-18 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead—tellurium—lithium—titanium—oxides, and their use in the manufacture of semiconductor devices |
US8889980B2 (en) | 2010-05-04 | 2014-11-18 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead—tellurium—lithium—oxides, and their use in the manufacture of semiconductor devices |
US8895843B2 (en) | 2010-05-04 | 2014-11-25 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
US9722100B2 (en) | 2010-05-04 | 2017-08-01 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices |
US10468542B2 (en) | 2010-05-04 | 2019-11-05 | Dupont Electronics, Inc. | Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices |
US10559703B2 (en) | 2010-05-04 | 2020-02-11 | Dupont Electronics, Inc. | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
US11043605B2 (en) | 2010-05-04 | 2021-06-22 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices |
KR101414091B1 (ko) * | 2010-08-11 | 2014-07-02 | 가부시끼가이샤 히다치 세이사꾸쇼 | 전극용 글래스 조성물, 및 그것을 이용한 전극용 페이스트, 및 그것을 적용한 전자 부품 |
US10658528B2 (en) | 2017-04-18 | 2020-05-19 | Dupont Electronics, Inc. | Conductive paste composition and semiconductor devices made therewith |
Also Published As
Publication number | Publication date |
---|---|
JPH02293344A (ja) | 1990-12-04 |
EP0393416B1 (en) | 1993-06-30 |
PH27455A (en) | 1993-07-02 |
JP2703385B2 (ja) | 1998-01-26 |
HK123293A (en) | 1993-11-19 |
EP0393416A1 (en) | 1990-10-24 |
KR920010092B1 (ko) | 1992-11-14 |
US4945071A (en) | 1990-07-31 |
DE69002078T2 (de) | 1993-10-21 |
DE69002078D1 (de) | 1993-08-05 |
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