KR880009138A - 금속화층이 형성된 질화알루미늄 소결체 및 이의 제조방법 - Google Patents

금속화층이 형성된 질화알루미늄 소결체 및 이의 제조방법 Download PDF

Info

Publication number
KR880009138A
KR880009138A KR1019880000531A KR880000531A KR880009138A KR 880009138 A KR880009138 A KR 880009138A KR 1019880000531 A KR1019880000531 A KR 1019880000531A KR 880000531 A KR880000531 A KR 880000531A KR 880009138 A KR880009138 A KR 880009138A
Authority
KR
South Korea
Prior art keywords
aluminum
oxide
sintered body
nitride sintered
metal
Prior art date
Application number
KR1019880000531A
Other languages
English (en)
Other versions
KR930005894B1 (ko
Inventor
아끼라 사사미
히도유끼 사가노우에
Original Assignee
나가하라 쯔네오
수미도모 덴끼고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나가하라 쯔네오, 수미도모 덴끼고오교 가부시끼가이샤 filed Critical 나가하라 쯔네오
Publication of KR880009138A publication Critical patent/KR880009138A/ko
Application granted granted Critical
Publication of KR930005894B1 publication Critical patent/KR930005894B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5133—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5138—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of Mn and Mo, e.g. for the Moly-manganese method
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Products (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

내용 없음.

Description

금속화층이 형성된 질화알루미늄 소결체 및 이의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 질화알루미늄 소결체의 제조방법의 한 실시양태를 개략적으로 도시한 공정도.
제2도는 본 발명에 따른 질화알루미늄 소결체의 제조방법의 다른 실시양태를 개략적으로 도시한 공정도.
제3도는 본 발명에 따른 질화알루미늄 소결체를 반도체 장치용 패키지(pakage) 등에 사용한 경우의 제조방법의 한 실시양태를 개략적으로 도시한 공정도.

Claims (20)

  1. 텅스텐 및 몰리브덴 중에서 선택된 하나 이상의 금속 : 질화 알루미늄, 산화 알루미늄 및 산질화 알루미늄 중에서 선택된 하나 이상의 알루미늄 화합물 : 및 산화 칼슘을 함유하는 금속화층이 이의 표면에 형성된 질화 알루미늄 소결체.
  2. 제1항에 있어서, 금속화층이 금속 40내지 98중량%, 알루미늄 화합물 1내지 25중량% 및 산화 칼슘 1내지 35중량%를 함유하는 질화 알루미늄 소결체.
  3. 제1항에 있어서, 금속이 텅스텐이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 10중량% 및 산화 칼슘 1내지 20중량%를 함유하는 질화 알루미늄 소결체.
  4. 제1항에 있어서, 금속이 몰리브덴이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 10중량% 및 산화 칼슘 1 내지 35중량%를 함유하는 질화 알루미늄 소결체.
  5. 제1항에 있어서, 금속이 텅스텐이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알류미늄 1 내지 10중량% 및 산화 칼륨 10 내지 20중량%를 함유하는 질화 알루미늄 소결체.
  6. 제1항에 있어서, 금속이 텅스텐이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1 내지 10 중량% 및 산화칼륨 3 내지 15중량%를 함유하는 질화 알루미늄 소결체.
  7. 제1항에 있어서, 금속이 텅스텐이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 5중량% 및 산화 칼슘 1내지 15%를 함유하는 질화 알루미늄 소결체.
  8. 제1항에 있어서, 금속이 몰리브덴이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 10중량% 및 산화칼슘 15내지 35중량%를 함유하는 질화 알루미늄 소결체.
  9. 제1항에 있어서, 금속이 몰리브덴이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 7중량% 및 산화 칼슘 1내지 35중량%를 함유하는 질화 알루미늄 소결체.
  10. 제1항에 있어서, 금속이 몰리브덴이고 알루미늄 1내지 5중량% 및 산화 칼슘 1내지 25중량%를 함유하는 질화 알루미늄 소결체.
  11. 제1항에 있어서, 반도체 장치용 피키지(package) 기판의 일부를 구성하는 질화 알루미늄 소결체.
  12. 제11항에 있어서, 금속이 텅스텐이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 10중량% 및 산화 칼슘 10내지 20중량%를 함유하는 질화 알루미늄 소결체.
  13. 제11항에 있어서, 금속이 몰리브덴이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 10중량% 및 산화 칼슘 15내지 35중량%를 함유하는 질화 알루미늄 소결체.
  14. 제1항에 있어서, 반도체 장치용 열 싱크(heat sink)의 일부를 구성하는 질화 알루미늄 소결체.
  15. 제14항에 있어서, 금속이 텅스텐이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 10중량% 및 산화 칼슘 3내지 15중량%를 함유하는 질화 알루미늄 소결체.
  16. 제14항에 있어서, 금속이 몰리브덴이고 알루미늄 화합물이 산화 알루미늄이며, 금속화층이 산화 알루미늄 1내지 7중량% 및 산화 칼슘 1내지 35중량%를 함유하는 질화 알루미늄 소결체.
  17. 제1항에 있어서, 반도체 장치용 패키지 기밀봉지(airtightly sealing)의 캡(cap)의 일부를 구성하는 질화 알루미늄 소결체.
  18. 소정의 형상을 갖도록 먼저 소성시켜 형성된 질화 알루미늄 소결체를 준비하는단계; 산화 칼슘, 질산 칼슘 및 탄산 칼슘 중에서 선택된 하나 이상의 칼슘 화합물 분말과, 질화 알루미늄, 산화 알루미늄 및 산질화 알루미늄 중에서 선택된 하나 이상의 알루미늄 화합물 분말을 함유하는, 텅스텐 및 몰리브덴 중에서 선택된 하나 이상의 금속 페이스트(Paste)를 제조하는 단계 : 금속 페이스트를 질화 알루미늄 소결체의 표면에 도포하는 단계 : 및 금속 페이스트가 도포된 질화 알루미늄 소결체를 불활성 대기 중에서 소성시키는 단계를 포함하여, 질화 알루미늄 소결체의 표면에 금속화층을 형성하는 방법.
  19. 제18항에 있어서, 금속 페이스트를 제조하는 단계가, 칼슘 화합물 분말과 알루미늄 화합물 분말 및 텅스텐 또는 몰리브덴중에서 선택된 하나 이상의 금속 분말을 혼련(Kreading)하는 것을 포함하는 방법.
  20. 제18항에 있어서, 금속 페이스트를 제조하는 단계가 칼슘 화합물 분말과 알루미늄 화합물의 분말을 먼저 혼합하고 소성시켜 소성물을 제공하는 단계 및, 소성물의 분말과, 텅스텐 및 몰리브덴 중에서 선택된 하나 이상의 금속 분말을 혼련시켜 금속 페이스트를 제공하는 단계를 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880000531A 1987-01-26 1988-01-25 금속화층이 형성된 질화알루미늄 소결체 및 이의 제조방법 KR930005894B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP1642287 1987-01-26
JP?62-16422 1987-01-26
JP16422 1987-01-26
JP?62-16421 1987-01-26
JP1642187 1987-01-26
JP16421 1988-04-22

Publications (2)

Publication Number Publication Date
KR880009138A true KR880009138A (ko) 1988-09-14
KR930005894B1 KR930005894B1 (ko) 1993-06-25

Family

ID=26352765

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880000531A KR930005894B1 (ko) 1987-01-26 1988-01-25 금속화층이 형성된 질화알루미늄 소결체 및 이의 제조방법

Country Status (4)

Country Link
EP (1) EP0276788B1 (ko)
KR (1) KR930005894B1 (ko)
CA (1) CA1333241C (ko)
DE (1) DE3877370T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101011412B1 (ko) * 2004-11-12 2011-01-28 가부시끼가이샤 도꾸야마 메탈라이즈드 질화알루미늄 기판의 제조 방법 및 그것에의해서 얻어지는 기판

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2774560B2 (ja) * 1989-03-31 1998-07-09 株式会社東芝 窒化アルミニウムメタライズ基板
JP2822518B2 (ja) * 1989-12-20 1998-11-11 住友電気工業株式会社 窒化アルミニウム焼結体への金属化層形成方法
US5292552A (en) * 1989-12-20 1994-03-08 Sumitomo Electric Industries, Ltd. Method for forming metallized layer on an aluminum nitride sintered body
JPH0461293A (ja) * 1990-06-29 1992-02-27 Toshiba Corp 回路基板及びその製造方法
US5200249A (en) * 1990-08-15 1993-04-06 W. R. Grace & Co.-Conn. Via metallization for AlN ceramic electronic package
JP2555231B2 (ja) * 1991-05-21 1996-11-20 富士通株式会社 窒化アルミニウム多層回路基板の製造方法
DE19514018C1 (de) * 1995-04-13 1996-11-28 Hoechst Ceram Tec Ag Verfahren zur Herstellung eines metallbeschichteten, metallisierten Substrats aus Aluminiumnitridkeramik und damit erhaltenes metallbeschichtetes Substrat

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4695517A (en) * 1985-05-31 1987-09-22 Ngk Spark Plug Co., Ltd. Composite layer aluminum nitride base sintered body
JPS6265991A (ja) * 1985-09-13 1987-03-25 株式会社東芝 高熱伝導性セラミツクス基板
DE3789628T3 (de) * 1986-02-20 1998-04-02 Toshiba Kawasaki Kk Gesinterter Körper aus Aluminiumnitrid mit leitender metallisierter Schicht.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101011412B1 (ko) * 2004-11-12 2011-01-28 가부시끼가이샤 도꾸야마 메탈라이즈드 질화알루미늄 기판의 제조 방법 및 그것에의해서 얻어지는 기판

Also Published As

Publication number Publication date
EP0276788B1 (en) 1993-01-13
DE3877370T2 (de) 1993-05-06
EP0276788A3 (en) 1989-05-31
KR930005894B1 (ko) 1993-06-25
DE3877370D1 (de) 1993-02-25
EP0276788A2 (en) 1988-08-03
CA1333241C (en) 1994-11-29

Similar Documents

Publication Publication Date Title
KR900016060A (ko) 전자용도의 저연화점산화금속유리
EP0085332A3 (de) Metallisierte Halbleiter und Verfahren zu ihrer Herstellung
KR950000921A (ko) 고융점 금속질소화물의 증착방법 및 고융점 금속질소화물을 함유하는 전도막의 형성방법
KR880009138A (ko) 금속화층이 형성된 질화알루미늄 소결체 및 이의 제조방법
GB1335654A (en) Packages for semiconductor chips
KR890003268A (ko) 아노타이트 소결체의 제조방법
JP2822518B2 (ja) 窒化アルミニウム焼結体への金属化層形成方法
FR2256963B1 (ko)
KR970006236A (ko) 질화알루미늄 접합 구조체
JPS5366164A (en) Susceptor for semiconductor wafer processing
KR880011829A (ko) 초전도 세라믹스의 제조방법
KR910007818A (ko) 밀폐유리 페이스트 조성물 및 이것의 유리광택층이 있는 세라믹 장치
JPS5321570A (en) Bonding method of semiconductor substrates
JPS6477150A (en) Manufacture of semiconductor device
GB1458846A (en) Semiconductor packages
JPS5223281A (en) Method of manufacturing semiconductor device
JPS537173A (en) Solder-sealed ceramic package
JPS5374368A (en) Package for semiconductor device
JPS57160906A (en) Silicon carbide having metallized layer and its manufacture
JPH02254744A (ja) 半導体装置
JPS5359893A (en) Manufacturing method of resistor compound
JPS53137099A (en) Production of titanium nitride
JPS5240974A (en) Package for semiconductor chips
JPS5555563A (en) Electrode material for semiconductor device
JPS52140488A (en) Fluorescent membrane and production thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070608

Year of fee payment: 15

EXPY Expiration of term