DE3877370T2 - Gesinterter aluminiumnitridkoerper mit metallhaltiger schicht und verfahren zu seiner herstellung. - Google Patents
Gesinterter aluminiumnitridkoerper mit metallhaltiger schicht und verfahren zu seiner herstellung.Info
- Publication number
- DE3877370T2 DE3877370T2 DE8888101015T DE3877370T DE3877370T2 DE 3877370 T2 DE3877370 T2 DE 3877370T2 DE 8888101015 T DE8888101015 T DE 8888101015T DE 3877370 T DE3877370 T DE 3877370T DE 3877370 T2 DE3877370 T2 DE 3877370T2
- Authority
- DE
- Germany
- Prior art keywords
- sinted
- production
- aluminum nitride
- metal container
- nitride body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
- C04B41/5133—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the refractory metals
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
- C04B41/5138—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of Mn and Mo, e.g. for the Moly-manganese method
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Products (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1642287 | 1987-01-26 | ||
JP1642187 | 1987-01-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3877370D1 DE3877370D1 (de) | 1993-02-25 |
DE3877370T2 true DE3877370T2 (de) | 1993-05-06 |
Family
ID=26352765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888101015T Expired - Lifetime DE3877370T2 (de) | 1987-01-26 | 1988-01-25 | Gesinterter aluminiumnitridkoerper mit metallhaltiger schicht und verfahren zu seiner herstellung. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0276788B1 (de) |
KR (1) | KR930005894B1 (de) |
CA (1) | CA1333241C (de) |
DE (1) | DE3877370T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2774560B2 (ja) * | 1989-03-31 | 1998-07-09 | 株式会社東芝 | 窒化アルミニウムメタライズ基板 |
JP2822518B2 (ja) * | 1989-12-20 | 1998-11-11 | 住友電気工業株式会社 | 窒化アルミニウム焼結体への金属化層形成方法 |
US5292552A (en) * | 1989-12-20 | 1994-03-08 | Sumitomo Electric Industries, Ltd. | Method for forming metallized layer on an aluminum nitride sintered body |
JPH0461293A (ja) * | 1990-06-29 | 1992-02-27 | Toshiba Corp | 回路基板及びその製造方法 |
US5200249A (en) * | 1990-08-15 | 1993-04-06 | W. R. Grace & Co.-Conn. | Via metallization for AlN ceramic electronic package |
JP2555231B2 (ja) * | 1991-05-21 | 1996-11-20 | 富士通株式会社 | 窒化アルミニウム多層回路基板の製造方法 |
DE19514018C1 (de) * | 1995-04-13 | 1996-11-28 | Hoechst Ceram Tec Ag | Verfahren zur Herstellung eines metallbeschichteten, metallisierten Substrats aus Aluminiumnitridkeramik und damit erhaltenes metallbeschichtetes Substrat |
WO2006051881A1 (ja) * | 2004-11-12 | 2006-05-18 | Tokuyama Corporation | メタライズド窒化アルミニウム基板の製造方法及びそれによって得られる基板 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4695517A (en) * | 1985-05-31 | 1987-09-22 | Ngk Spark Plug Co., Ltd. | Composite layer aluminum nitride base sintered body |
JPS6265991A (ja) * | 1985-09-13 | 1987-03-25 | 株式会社東芝 | 高熱伝導性セラミツクス基板 |
DE3789628T3 (de) * | 1986-02-20 | 1998-04-02 | Toshiba Kawasaki Kk | Gesinterter Körper aus Aluminiumnitrid mit leitender metallisierter Schicht. |
-
1988
- 1988-01-22 CA CA000557216A patent/CA1333241C/en not_active Expired - Lifetime
- 1988-01-25 KR KR1019880000531A patent/KR930005894B1/ko not_active IP Right Cessation
- 1988-01-25 DE DE8888101015T patent/DE3877370T2/de not_active Expired - Lifetime
- 1988-01-25 EP EP88101015A patent/EP0276788B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0276788B1 (de) | 1993-01-13 |
EP0276788A3 (en) | 1989-05-31 |
KR930005894B1 (ko) | 1993-06-25 |
DE3877370D1 (de) | 1993-02-25 |
KR880009138A (ko) | 1988-09-14 |
EP0276788A2 (de) | 1988-08-03 |
CA1333241C (en) | 1994-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |