JPS5555563A - Electrode material for semiconductor device - Google Patents

Electrode material for semiconductor device

Info

Publication number
JPS5555563A
JPS5555563A JP12911678A JP12911678A JPS5555563A JP S5555563 A JPS5555563 A JP S5555563A JP 12911678 A JP12911678 A JP 12911678A JP 12911678 A JP12911678 A JP 12911678A JP S5555563 A JPS5555563 A JP S5555563A
Authority
JP
Japan
Prior art keywords
gold
aluminum
semiconductor device
melting point
solid content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12911678A
Other languages
Japanese (ja)
Other versions
JPS6159551B2 (en
Inventor
Manabu Yoshida
Jun Fukuchi
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12911678A priority Critical patent/JPS5555563A/en
Priority to US06/085,205 priority patent/US4256513A/en
Publication of JPS5555563A publication Critical patent/JPS5555563A/en
Publication of JPS6159551B2 publication Critical patent/JPS6159551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: To reduce the production cost of an electrode for semiconductor device by means of printing and calcining process by forming muddy material by solid content containing silver, gold, aluminum and non-oxidized lead low melting point glass to thereby eliminate necessity of high temperature at the electrode forming time.
CONSTITUTION: Solid content containing 70∼90wt% of silver, 1∼11wt% of gold, 1∼11wt% of aluminum and 7∼9wt% of non-oxidized lead low melting point glass is diffused in an organic solvent containing organic binder to thereby form muddy material. Thus, the gold and aluminum preferentially react in alloy for silicon even at relatively lower calcining temperature so that the muddy materials 4, 5 are joined in low contacting resistance for the layers 2, 3 of silicon.
COPYRIGHT: (C)1980,JPO&Japio
JP12911678A 1978-10-19 1978-10-19 Electrode material for semiconductor device Granted JPS5555563A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12911678A JPS5555563A (en) 1978-10-19 1978-10-19 Electrode material for semiconductor device
US06/085,205 US4256513A (en) 1978-10-19 1979-10-16 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12911678A JPS5555563A (en) 1978-10-19 1978-10-19 Electrode material for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5555563A true JPS5555563A (en) 1980-04-23
JPS6159551B2 JPS6159551B2 (en) 1986-12-17

Family

ID=15001457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12911678A Granted JPS5555563A (en) 1978-10-19 1978-10-19 Electrode material for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5555563A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007077655A1 (en) * 2005-12-28 2007-07-12 Naoetsu Electronics Co., Ltd. Solar battery
JP2014515161A (en) * 2011-04-06 2014-06-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Method for manufacturing electrode of solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007077655A1 (en) * 2005-12-28 2007-07-12 Naoetsu Electronics Co., Ltd. Solar battery
JP2014515161A (en) * 2011-04-06 2014-06-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Method for manufacturing electrode of solar cell

Also Published As

Publication number Publication date
JPS6159551B2 (en) 1986-12-17

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