JPS53110459A - Electrode forming method for iii-v group compounds semiconductor - Google Patents

Electrode forming method for iii-v group compounds semiconductor

Info

Publication number
JPS53110459A
JPS53110459A JP2489677A JP2489677A JPS53110459A JP S53110459 A JPS53110459 A JP S53110459A JP 2489677 A JP2489677 A JP 2489677A JP 2489677 A JP2489677 A JP 2489677A JP S53110459 A JPS53110459 A JP S53110459A
Authority
JP
Japan
Prior art keywords
iii
forming method
electrode forming
group compounds
compounds semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2489677A
Other languages
Japanese (ja)
Other versions
JPS5758774B2 (en
Inventor
Noburo Yasuda
Chiyouji Ogawa
Masayuki Asaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2489677A priority Critical patent/JPS53110459A/en
Publication of JPS53110459A publication Critical patent/JPS53110459A/en
Publication of JPS5758774B2 publication Critical patent/JPS5758774B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: To make the life of W boat longer and to perform suitable Au-Si vaporization, by superimposing the gold thin plate and Si thin plate on the metallic plate of high melting point such as W and by heating the metallic plate.
COPYRIGHT: (C)1978,JPO&Japio
JP2489677A 1977-03-09 1977-03-09 Electrode forming method for iii-v group compounds semiconductor Granted JPS53110459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2489677A JPS53110459A (en) 1977-03-09 1977-03-09 Electrode forming method for iii-v group compounds semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2489677A JPS53110459A (en) 1977-03-09 1977-03-09 Electrode forming method for iii-v group compounds semiconductor

Publications (2)

Publication Number Publication Date
JPS53110459A true JPS53110459A (en) 1978-09-27
JPS5758774B2 JPS5758774B2 (en) 1982-12-11

Family

ID=12150938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2489677A Granted JPS53110459A (en) 1977-03-09 1977-03-09 Electrode forming method for iii-v group compounds semiconductor

Country Status (1)

Country Link
JP (1) JPS53110459A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372521B1 (en) * 1998-01-21 2002-04-16 Globitech Incorporated Post epitaxial thermal oxidation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372521B1 (en) * 1998-01-21 2002-04-16 Globitech Incorporated Post epitaxial thermal oxidation

Also Published As

Publication number Publication date
JPS5758774B2 (en) 1982-12-11

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