JPS5228259A - Shottky barrier-type semiconductor device and method of its production - Google Patents

Shottky barrier-type semiconductor device and method of its production

Info

Publication number
JPS5228259A
JPS5228259A JP50104307A JP10430775A JPS5228259A JP S5228259 A JPS5228259 A JP S5228259A JP 50104307 A JP50104307 A JP 50104307A JP 10430775 A JP10430775 A JP 10430775A JP S5228259 A JPS5228259 A JP S5228259A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
production
shottky barrier
shottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50104307A
Other languages
Japanese (ja)
Other versions
JPS5838942B2 (en
Inventor
Aiichiro Nara
Koichi Hamanaka
Hideaki Ikegawa
Hisao Kondo
Takeji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50104307A priority Critical patent/JPS5838942B2/en
Priority to SE7609464A priority patent/SE7609464L/en
Priority to DE19762638530 priority patent/DE2638530A1/en
Publication of JPS5228259A publication Critical patent/JPS5228259A/en
Publication of JPS5838942B2 publication Critical patent/JPS5838942B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain high performance shottky-type semiconductor device reproducibly by using NiPa alloy as an electrode material.
COPYRIGHT: (C)1977,JPO&Japio
JP50104307A 1975-08-28 1975-08-28 ShyotsutoshiyouhekigatahandoutaisouchiOyobiSonoseizohou Expired JPS5838942B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50104307A JPS5838942B2 (en) 1975-08-28 1975-08-28 ShyotsutoshiyouhekigatahandoutaisouchiOyobiSonoseizohou
SE7609464A SE7609464L (en) 1975-08-28 1976-08-26 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTUREING THE SAME
DE19762638530 DE2638530A1 (en) 1975-08-28 1976-08-26 Semiconductor with Schottky barrier - is formed by heating in contact with nickel pallaalladium alloy to form film of intermetallic cpd.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50104307A JPS5838942B2 (en) 1975-08-28 1975-08-28 ShyotsutoshiyouhekigatahandoutaisouchiOyobiSonoseizohou

Publications (2)

Publication Number Publication Date
JPS5228259A true JPS5228259A (en) 1977-03-03
JPS5838942B2 JPS5838942B2 (en) 1983-08-26

Family

ID=14377255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50104307A Expired JPS5838942B2 (en) 1975-08-28 1975-08-28 ShyotsutoshiyouhekigatahandoutaisouchiOyobiSonoseizohou

Country Status (3)

Country Link
JP (1) JPS5838942B2 (en)
DE (1) DE2638530A1 (en)
SE (1) SE7609464L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720734A (en) * 1981-09-11 1988-01-19 Nippon Telegraph And Telephone Public Corporation Low loss and high speed diodes

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69233201T2 (en) * 1991-01-25 2004-07-01 Kabushiki Kaisha Toshiba, Kawasaki High-purity conductive films and their application in semiconductor devices
US5155559A (en) * 1991-07-25 1992-10-13 North Carolina State University High temperature refractory silicide rectifying contact

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021343A (en) * 1973-06-27 1975-03-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021343A (en) * 1973-06-27 1975-03-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720734A (en) * 1981-09-11 1988-01-19 Nippon Telegraph And Telephone Public Corporation Low loss and high speed diodes

Also Published As

Publication number Publication date
SE7609464L (en) 1977-03-01
DE2638530A1 (en) 1977-03-10
JPS5838942B2 (en) 1983-08-26

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