KR940703066A - 높은 열 사이클 접착력 및 노화 접착력을 위한 은 풍부 전도체 조성물 - Google Patents

높은 열 사이클 접착력 및 노화 접착력을 위한 은 풍부 전도체 조성물

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Publication number
KR940703066A
KR940703066A KR1019940701158A KR19940701158A KR940703066A KR 940703066 A KR940703066 A KR 940703066A KR 1019940701158 A KR1019940701158 A KR 1019940701158A KR 19940701158 A KR19940701158 A KR 19940701158A KR 940703066 A KR940703066 A KR 940703066A
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South Korea
Prior art keywords
oxide
lead
bismuth
electrically conductive
composition
Prior art date
Application number
KR1019940701158A
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English (en)
Inventor
히로유끼 하라.
마르크 헨리 라브랑체
배리 이. 테일러
Original Assignee
미리암 디. 메코너헤이
이. 아이. 듀폰 디 네모아 앤드 캄파니(E. Du Pont De Nemours And Company)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 미리암 디. 메코너헤이, 이. 아이. 듀폰 디 네모아 앤드 캄파니(E. Du Pont De Nemours And Company) filed Critical 미리암 디. 메코너헤이
Publication of KR940703066A publication Critical patent/KR940703066A/ko

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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/88Metals
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5183Metallising, e.g. infiltration of sintered ceramic preforms with molten metal inorganic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • H01B1/16Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867Applying pastes or inks, e.g. screen printing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structural Engineering (AREA)
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  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
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  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

본 발명은 주로 비스무트, 구리, 납, 아연 및 천이금속의 산화물의 미립자 혼합물로 이루어진 열 사이클 접착 첨가제 조성물 및 이로부터 제조된 전도성 후막 조성물에 관한 것이다.

Description

높은 열 사이클 접착력 및 노화 접착력을 위한 은 풍부 전도체 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 비스무트, 구리, 납, 아연의 산화물 또는 산화물 전구 물질의 미분 입자와, 철, 코발트, 니켈 및 이들의 혼합물로 이루어진 군 중에서 선택된 천이 금속의 산화물 또는 전구 물질의 미분 입자의 혼합물로 이루어지고 (a) 산화비스무트 및 산화납에 대한 산화구리의 중량비가 0.01-2이고, (b) 산화비스무트 및 산화납에 대한 산화납의 중량비가 0-1이고, (c) 산화비스무트 및 산화납에 대한 산화아연의 중량비가 0.01-2이고, (d) 산화비스무트 및 산화납에 대한 천이금속 산화물의 중량비가 0.01-2인 열 사이클 접착 첨가제 조성물.
  2. (1) 1종 이상의 납땜 가능한 전기 전도성 금속 85-99.9중량%와 (2) 제1항 기재의 첨가제 조성물 15-0.1중량%를 함유하는 미분 입자의 혼합물로 이루어진 납땜 가능한 전기 전도층 제조용 조성물.
  3. 제2항에 있어서, 입자성 혼합물이 유기 매질중에 분산되는 것인 조성물.
  4. (1) 제3항 기재의 조성물 층을 무기 산화물 기재 기판의 표면에 도포하는 단계, (2) 도포된 층을 소성하여 분산 매질을 휘발시키고, 전기 전도성 금속 또는 금속 합금을 소결시키는 단계, (3) 용융된 땜납을 단계(2)의 소성층의 표면에 도포하는 단계, 및 (4) 도포된 땜납을 냉각시켜 고화시키는 단계로 이루어지는, 땜납과 전기 전도성 금속 또는 금속 합금의 접합 방법.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940701158A 1991-10-10 1992-10-08 높은 열 사이클 접착력 및 노화 접착력을 위한 은 풍부 전도체 조성물 KR940703066A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US774,788 1991-10-10
US07/774,788 US5250229A (en) 1991-10-10 1991-10-10 Silver-rich conductor compositions for high thermal cycled and aged adhesion
PCT/US1992/008578 WO1993007736A1 (en) 1991-10-10 1992-10-08 Silver-rich conductor compositions for high thermal cycled and aged adhesion

Publications (1)

Publication Number Publication Date
KR940703066A true KR940703066A (ko) 1994-09-17

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Application Number Title Priority Date Filing Date
KR1019940701158A KR970008549B1 (ko) 1991-10-10 1992-10-08 높은 열 사이클 접착력 및 노화 접착력을 위한 은 풍부 전도체 조성물
KR1019940701158A KR940703066A (ko) 1991-10-10 1992-10-08 높은 열 사이클 접착력 및 노화 접착력을 위한 은 풍부 전도체 조성물

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Country Link
US (1) US5250229A (ko)
EP (1) EP0607255B1 (ko)
JP (1) JP2793912B2 (ko)
KR (2) KR970008549B1 (ko)
CN (1) CN1071535A (ko)
DE (1) DE69216634T2 (ko)
MY (1) MY108362A (ko)
TW (1) TW215908B (ko)
WO (1) WO1993007736A1 (ko)

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CN1071535A (zh) 1993-04-28
WO1993007736A1 (en) 1993-04-15
KR970008549B1 (ko) 1997-05-27
DE69216634D1 (de) 1997-02-20
US5250229A (en) 1993-10-05
JP2793912B2 (ja) 1998-09-03
MY108362A (en) 1996-09-30
EP0607255A1 (en) 1994-07-27
EP0607255B1 (en) 1997-01-08
DE69216634T2 (de) 1997-04-24
JPH07500450A (ja) 1995-01-12
TW215908B (ko) 1993-11-11

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