GB1569028A - Solder-glass material filled with a granular filler - Google Patents
Solder-glass material filled with a granular filler Download PDFInfo
- Publication number
- GB1569028A GB1569028A GB5343877A GB5343877A GB1569028A GB 1569028 A GB1569028 A GB 1569028A GB 5343877 A GB5343877 A GB 5343877A GB 5343877 A GB5343877 A GB 5343877A GB 1569028 A GB1569028 A GB 1569028A
- Authority
- GB
- United Kingdom
- Prior art keywords
- filler
- glass
- solder glass
- caf2
- grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000945 filler Substances 0.000 title claims description 46
- 239000011521 glass Substances 0.000 title claims description 46
- 239000000463 material Substances 0.000 title claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 229910000679 solder Inorganic materials 0.000 claims description 35
- 229910052681 coesite Inorganic materials 0.000 claims description 21
- 229910052906 cristobalite Inorganic materials 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 229910052682 stishovite Inorganic materials 0.000 claims description 21
- 229910052905 tridymite Inorganic materials 0.000 claims description 21
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 16
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 239000000156 glass melt Substances 0.000 claims description 6
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 6
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- -1 T1 20 Chemical compound 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
Description
(54) SOLDER-GLASS MATERIAL FILLED WITH A GRANULAR FILLER
(71) We, INTERNATIONAL STANDARD ELECTRIC CORPORATION, a Corporation organised and existing under the Laws of the State of Delaware, United States of
America, of 320 Park Avenue, New York 22, State of New York, United States of America do hereby declare the invention, for which we pray that a patent may be granted to us, and the method by which it is to be performed, to be particularly described in and by the following statement:
The present invention relates to a solder glass material filled with a granular filler.
By admixing a filler to a solder glass e.g. for semiconductor use, the coefficient of expansion of the solder glass can be changed. The fillers given in German Published Patent Application 2,533,687, e.g. SiO2, have a low coefficient of expansion (SiO2:5.10-'/ "K) and are therefore suited to reducing the coefficient of expansion of the solder glass.
When a solder glass material is used, e.g., when a semiconductor device is encapsulated directly in a solder glass, it is important that the coefficients of expansion of the solder glass and the semiconductor substrate be approximately equal, with a difference between the coefficients of expansion of + 5.10-7/"K being still permissible.
According to one aspect of the invention there is provided a low melting point solder glass, for encapsulating semiconductor devices, wherein a filler is incorporated into the body of the glass, wherein the filler is CaF2, and wherein the filler is in granular form with the filler grains each covered with a film of SiO2 which interacts with the solder glass material at temperatures below 400"C.
According to another aspect of the invention there is provided a low melting point solder glass, for encapsulating semiconductor devices, wherein the solder glass consists of a first mixture of PbO,ZnO and B203 in a respective molar ratio of 2 : 1: 1, a second mixture of
PbF2, T120, SiO2 in a respective molar ratio of 2: 1:1, said first and second mixtures being present in the glass in a molar ratio in the range 8:1 to 10: 1, wherein a filler is incorporated into the body of the glass, wherein the filler is CaF2, and wherein the filler is in granular form with the filler grains each covered with an SiO2 film which interacts with the solder glass material at temperatures below 400"C.
Through the filler, the coefficient of expansion of the solder glass material used to encapsulate semiconductor devices can be adapted to that of the supporting material for the semiconductor device.
The invention will now be described by way of example with respect to the encapsulation in a solder glass of a gold-wire-bonded transistor alloyed on to a copper strip. The solder glass consists of the following constituents (molar ratios are given):
PbO: ZnO: B203 =2:1:1; PbF2: T120: SiO2 2:1:1; (PbO + ZnO + B203): (PbF2 + T120 + SiO2)
between 8 : 1 and 10 1).
Since the coefficient of expansion of copper is 160.10-7/"K, and that of the solder glass 100-120.10-7/"K, the coefficient of expansion of the filler must be greater than 160.l0-'/ OK, for only in that case can a resultant coefficient of expansion of 160.10-7/ "K be achieved.
It is a prerequisite for the use of a filler in a solder glass that the glass melt interacts with the filler at temperatures below 400 C. How this interaction takes place is still not quite clear. It is assumed, however, that the glass melt chemically attacks the filler to a slight degree. It must be borne in mind that during the encapsulation, the temperature of the glass melt must not exceed the eutectic temperature of a gold-silicon alloy.
In this example good results were obtained with a granular filler whose grains are covered with an oxide film which was an approximately 1 ijm thick SiO2 film. The filler used in this case was CaF2, whose coefficient of expansion is 180.10-7/ "K. To manufacture this filler, the
CaF2 grains are immersed in a solution of an organosilicon compound. Organosilicon compounds are known from, inter alia, "Rompps Chemie-Lexikon", 7th Edition, 1975,
Franck'sche Verlagsbuchhandlung, Stuttgart. The solvent used may be'an organic one. After the solvent has evaporated at room temperature, the CaF2 grains, covered with the organosilicon compound, are heated, whereby the desired SiO2 film is formed thereon.
The pulverized solder glass is so mixed with the CaF2 grains covered with an SiO2 film'that the resulting mixture contains 10% by weight of filler.
During the melting of the solder glass mixed with the filler, the SiO2 film on the CaF2 grains reacts with the glass melt. The resultant coefficient of expansion is approximately equal to that of the copper. It is particularly advantageous that the filler does not affect the fluidity of the solder glass.
WHAT WE CLAIM IS:
1. A low melting point solder glass, for encapsulating semiconductor devices, wherein a filler is incorporated into the body of the glass, wherein the filler is CaF2, and wherein the filler is in granular form with the filler grains each covered with a film of SiO2 which interacts with the solder glass material at temperatures below 400"C.
2. A low melting point solder glass, for encapsulating semiconductor devices, wherein the solder glass consists of a first mixture of PbO, ZnO and B 203 in a respective molar ratio of 2:1 :1, a second mixture of PbF2, T1 20, SiO2 in a respective molar ratio of 2:1:1, said first and second mixtures being present in the glass in a molar ratio in the range 8:1 to 10:1, wherein a filler is incorporated into the body of the glass, wherein the filler is CaF2, and wherein the filler is in granular form with the filler grains each covered with an SiO2 film which interacts with the solder glass material at temperatures below 400"C.
3. A solder glass as claimed in claims 1 and 2 and substantially as described herein.
**WARNING** end of DESC field may overlap start of CLMS **.
Claims (3)
1. A low melting point solder glass, for encapsulating semiconductor devices, wherein a filler is incorporated into the body of the glass, wherein the filler is CaF2, and wherein the filler is in granular form with the filler grains each covered with a film of SiO2 which interacts with the solder glass material at temperatures below 400"C.
2. A low melting point solder glass, for encapsulating semiconductor devices, wherein the solder glass consists of a first mixture of PbO, ZnO and B 203 in a respective molar ratio of 2:1 :1, a second mixture of PbF2, T1 20, SiO2 in a respective molar ratio of 2:1:1, said first and second mixtures being present in the glass in a molar ratio in the range 8:1 to 10:1, wherein a filler is incorporated into the body of the glass, wherein the filler is CaF2, and wherein the filler is in granular form with the filler grains each covered with an SiO2 film which interacts with the solder glass material at temperatures below 400"C.
3. A solder glass as claimed in claims 1 and 2 and substantially as described herein.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772700273 DE2700273A1 (en) | 1977-01-05 | 1977-01-05 | GRAY FILLING MATERIAL FOR A GLASS-CERAMIC MATERIAL |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1569028A true GB1569028A (en) | 1980-06-11 |
Family
ID=5998162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5343877A Expired GB1569028A (en) | 1977-01-05 | 1977-12-22 | Solder-glass material filled with a granular filler |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2700273A1 (en) |
| GB (1) | GB1569028A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752521A (en) * | 1984-09-19 | 1988-06-21 | Olin Corporation | Sealing glass composite |
| US4775647A (en) * | 1984-09-19 | 1988-10-04 | Olin Corporation | Sealing glass composite |
| US4801488A (en) * | 1984-09-19 | 1989-01-31 | Olin Corporation | Sealing glass composite |
| US4805009A (en) * | 1985-03-11 | 1989-02-14 | Olin Corporation | Hermetically sealed semiconductor package |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0175361B1 (en) * | 1984-09-19 | 1991-06-12 | Olin Corporation | Glass composite |
-
1977
- 1977-01-05 DE DE19772700273 patent/DE2700273A1/en not_active Withdrawn
- 1977-12-22 GB GB5343877A patent/GB1569028A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752521A (en) * | 1984-09-19 | 1988-06-21 | Olin Corporation | Sealing glass composite |
| US4775647A (en) * | 1984-09-19 | 1988-10-04 | Olin Corporation | Sealing glass composite |
| US4801488A (en) * | 1984-09-19 | 1989-01-31 | Olin Corporation | Sealing glass composite |
| US4805009A (en) * | 1985-03-11 | 1989-02-14 | Olin Corporation | Hermetically sealed semiconductor package |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2700273A1 (en) | 1978-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |