JPS55103734A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55103734A
JPS55103734A JP1015079A JP1015079A JPS55103734A JP S55103734 A JPS55103734 A JP S55103734A JP 1015079 A JP1015079 A JP 1015079A JP 1015079 A JP1015079 A JP 1015079A JP S55103734 A JPS55103734 A JP S55103734A
Authority
JP
Japan
Prior art keywords
lead
vamp
amorphous alloy
zinc
good connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1015079A
Other languages
Japanese (ja)
Inventor
Takashi Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1015079A priority Critical patent/JPS55103734A/en
Publication of JPS55103734A publication Critical patent/JPS55103734A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To obtain good connection with amorphous alloy effect, by coating vamp part of lead with zinc, at the time of gang bonding of lead with vamp to electrode containing Al as its principal component.
CONSTITUTION: Vamp 3, 3' of lead are connected with electrode 5, 5' of semiconductor pellet 4 and is sealed later by resin 6. Al electrodes 5, 5' of semiconductor pellet 4 and valcanized vamp 3, 3' of lead are connected each other utilizing amorphous alloy of Al and zinc. Amorphous alloy is immediately converted into solid phase from liquid phase and as there exists no state of coexistence of liquid phase and solid phase, and moreover, having a characteristic that melting point of alloy becomes lowest at that time, due to these characteristics, good connection without defect such as cracks etc. can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP1015079A 1979-01-31 1979-01-31 Semiconductor device Pending JPS55103734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1015079A JPS55103734A (en) 1979-01-31 1979-01-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1015079A JPS55103734A (en) 1979-01-31 1979-01-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55103734A true JPS55103734A (en) 1980-08-08

Family

ID=11742240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1015079A Pending JPS55103734A (en) 1979-01-31 1979-01-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55103734A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289944A (en) * 1987-05-22 1988-11-28 Olympus Optical Co Ltd Semiconductor device
JPH04162468A (en) * 1990-10-24 1992-06-05 Mitsui High Tec Inc Lead frame
US7709947B2 (en) 2006-06-15 2010-05-04 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device having semiconductor element with back electrode on insulating substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289944A (en) * 1987-05-22 1988-11-28 Olympus Optical Co Ltd Semiconductor device
JPH0588546B2 (en) * 1987-05-22 1993-12-22 Olympus Optical Co
JPH04162468A (en) * 1990-10-24 1992-06-05 Mitsui High Tec Inc Lead frame
US7709947B2 (en) 2006-06-15 2010-05-04 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device having semiconductor element with back electrode on insulating substrate

Similar Documents

Publication Publication Date Title
JPS55103734A (en) Semiconductor device
JPS5380966A (en) Manufacture of electrode fdr semiconductor device
JPS5215271A (en) Method of selecting electrodes of semiconductor device
JPS53121460A (en) Electrode lead for semiconductor
JPS5422768A (en) Semiconductor device
JPS53110460A (en) Electrode of compound semiconductor
JPS5317070A (en) Semiconductor device
JPS5527645A (en) Semiconductor device
JPS5250167A (en) Semiconductor device
JPS53110370A (en) Semiconductor device
JPS52132789A (en) Manufacture for supersonic vibrator
JPS5317274A (en) Electrode structure of semiconductor element
JPS5239373A (en) Dam for prevention of flowing of solder material
JPS5457975A (en) Resin sealing-type thyristor
JPS54101671A (en) Electronic parts
JPS5552227A (en) Semiconductor electrode structure
JPS52141565A (en) Manufacture of semiconductor unit
JPS52132778A (en) Manufacture for semiconductor device
JPS547272A (en) Semiconductor package
JPS54157080A (en) Semiconductor device
JPS5299068A (en) Semiconductor device
JPS5375766A (en) Mounting construction for semiconductor element
JPS5398777A (en) Semiconductor device of resin seal type
JPS5360172A (en) Production of semiconductor device
JPS5373992A (en) Lead wire bonding method to high molecule elment