DE2700273A1 - GRAY FILLING MATERIAL FOR A GLASS-CERAMIC MATERIAL - Google Patents
GRAY FILLING MATERIAL FOR A GLASS-CERAMIC MATERIALInfo
- Publication number
- DE2700273A1 DE2700273A1 DE19772700273 DE2700273A DE2700273A1 DE 2700273 A1 DE2700273 A1 DE 2700273A1 DE 19772700273 DE19772700273 DE 19772700273 DE 2700273 A DE2700273 A DE 2700273A DE 2700273 A1 DE2700273 A1 DE 2700273A1
- Authority
- DE
- Germany
- Prior art keywords
- filler material
- glass
- granular
- grains
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims description 33
- 239000006112 glass ceramic composition Substances 0.000 title claims description 9
- 239000000945 filler Substances 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000008187 granular material Substances 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical group 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910004261 CaF 2 Inorganic materials 0.000 description 3
- 239000012876 carrier material Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 101000993059 Homo sapiens Hereditary hemochromatosis protein Proteins 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
Description
STANDARD ELEKTRIK LOkENZSTANDARD ELECTRICAL LOCATION
AKTIENGESELLSCHAFTSHARED COMPANY
STUTTGART ^ 4/UUZ/JSTUTTGART ^ 4 / UUZ / J
S.Sinernos-3S.Sinernos-3
KÖRNIGES FÜ 1,1,14ATERIAL FÜR EIlJEN OLASKERAHISCHENGRAINY FOOT 1,1,14 MATERIAL FOR EIlJEN OLASCERAHIC
WERKSTOFFMATERIAL
Die Erfindung betrifft ein körniges Füllmaterial für einen glaskeramischen Werkstoff wie i;i Oberbegriff des Anspruchs 1 angegeben. Ein derartiges Füllmaterini ist aus der DT-OS 25 33 687 bekannt. Air? Füllmaterial eignen sich auch zahlreiche andere Stoffe, wie z.B. die Erdalkali halogenide. The invention relates to a granular filler material for a glass ceramic material such as i; i generic term des Claim 1 stated. Such a filling material is known from DT-OS 25 33 687. Air? Suitable filler material There are also numerous other substances, such as the alkaline earth halides.
Durch die Beimischung eines Füllmaterials zu einem glaskeramischen Werkstoff kann der Ausdehnungskoeffizient des Glaslots verändert werden. Die in der DT-OS 25 33 C87 angegebenen Füllmaterialien, z.B. GiO9, haben einen niedrigen Ausdehnungskoeffizienten (SiU2:5.1O /K) und eignen sich daher zur Verkleinerung des Ausdehnungskoeffizienten des Glaslots.By adding a filler material to a glass-ceramic material, the expansion coefficient of the glass solder can be changed. The filling materials specified in DT-OS 25 33 C87, eg GiO 9 , have a low expansion coefficient (SiU2: 5.1O / K) and are therefore suitable for reducing the expansion coefficient of the glass solder.
Bei der Verwendung eines glaskeranischen Werkstoffs, z.B. bei der direkten VerUapseluntr eines liallJ ei terbauelementes mit einem Glaslot, ist es wichtig, daß die Ausdehnungskoeffizienten von Glaslot und Halbleitersubstrat angenähert gleich sind. Eine Differenz der Ausdehnungskoeffizienten von * 5«10 /K ist hierbei noch zulässig.When using a glass ceramic material, E.g. when directly encapsulating a line component With a glass solder, it is important that the coefficient of expansion of glass solder and semiconductor substrate are approximately the same. A difference in the expansion coefficients of * 5 «10 / K is still permissible.
Sm/Scho
10.12.1976Sm / Scho
December 10, 1976
809827/0522809827/0522
G.Smernos-3G.Smernos-3
Als Beispiel für ein Halbleiterbauelement dient im Folgenden ein golddrahtcjcbondeter Transistor, der auf einem Kupferstreifen auflegiert ist. Die Verkapselung eines solchen Transistors muß bei Temperaturen unterhalb 378 Cerfolgcn, weil oberhalb dieser Temperatur Gold und üilizium ein in der Glafilotr>chmelzeAs an example of a semiconductor component, im Following is a gold wire bonded transistor that is on is alloyed with a copper strip. The encapsulation such a transistor must be used at temperatures below 378 success because above this temperature gold and silicon in the Glafilotr> melt
lösliches Kutektikum bilden. L'in Glaslot, mit dem unterhalb
von 378° C eine Ve
weiter unten angegeben.Form soluble cutectic. L'in glass solder, with which a Ve
given below.
halb von 378 C eine Verkapselung möglich ist, istencapsulation is possible halfway from 378 C
Nachteilig ist hierbei, daß die AusdehnungskoeffizientenThe disadvantage here is that the expansion coefficient
dieses Glaslots (100-12O.1O~ /K) und des Kupfers (160.10~7/K) sehr unterschiedlich sind. Dies kann zu Pissen in der Verkapselung führen. Deshalb muß entweder der Ausdehnungskoeffizient des Glaslots an den des Kupfers angepaßt werden oder es muß an Stelle des Kupfers ein anderes Trägermaterial gefunden werden. Für das Trägermaterial sind Legierungen bekannt (z.B. Fe/Ni/Co-Legierung mit einem hohen Fe-Anteil), deren Ausdehnungskoeffizienten relativ gut mit dem des Glaslots übereinstimmen. Diese Legierungen sind jedoch viel teurer als Kupfer und haben eine schlechte Wärmeleitfähigkeit.this glass solder (100-12O.1O ~ / K) and copper (160.10 ~ 7 / K) are very different. This can lead to pissing in the encapsulation. Therefore either the expansion coefficient of the glass solder has to be adapted to that of the copper or another carrier material has to be found in place of the copper. Alloys are known for the carrier material (eg Fe / Ni / Co alloy with a high Fe content), the expansion coefficients of which correspond relatively well to those of the glass solder. However, these alloys are much more expensive than copper and have poor thermal conductivity.
Wie bereits erwähnt, kann dor Ausdehnungskoeffizient eines Glaslots durch Beimischen eines Füllmaterials verändert werden.As already mentioned, the coefficient of expansion can be of a glass solder can be changed by adding a filler material.
Aufgabetask
Es ist daher Aufgabe der Erfindung, ein Füllmaterial anzugeben, das einem niedrigschmelzenden glaskeramischen Werkstoff beigemischt werden kann, und das den AuscOhnunaskoeffizienten des glaskeramischen Werkstoffs so ändert, daß er dem des HalhlpiternubFtrates anfepaftt ist.It is therefore the object of the invention to provide a filler material that is a low-melting glass ceramic Material can be added, and that the AuscOhnunas coefficient of the glass-ceramic material changes so that it is attached to that of the HalhlpiternubFtrates.
809827/0522809827/0522
S.Sniernos-3S.Sniernos-3
Lösungsolution
Eine Lösung dieser Aufgabe ist im Anspruch 1 angegeben. Ein Verfahren zur Herstellung eines solchen Füllnmterials ist im Anspruch 4 beschrieben. In den übrigen Patentanspriichen sind vorteilhafte Weiterbildungen rios Füll— materials bzw. des Verfahrens zur Herstellung dieses FUllmaterials angegeben.A solution to this problem is given in claim 1. A method of making such a filler material is described in claim 4. In the other patent claims, advantageous developments of rios filling- materials or the process for the production of this filling material specified.
Vorteiladvantage
Durch das neue Füllmaterial kann der Ausdehnungskoeffizient des zur Verkapselung von Halbleiterbauelementen verwendeten glaskeramischen Werkstoffs dem Trägermaterial des HaIbleiterbauelenentes angepaßt werden.The expansion coefficient the glass-ceramic material used to encapsulate semiconductor components, the carrier material of the semiconductor components be adjusted.
Die Erfindung wird beispielsweise für die Verkapselung eines golddrahtgebondeten Transistors, der auf einen Kupferstreifen auflegiert ist, mit einoir Glaslot beschrieben, Das Glaslot besteht beispielsweise aus folcenden Lestandteilen (es sind die Molverhä'ltriisse aThe invention is for example for the encapsulation of a gold wire bonded transistor, which is on a Copper strip is alloyed, described with a glass solder, The glass solder consists for example of folcenden L components (they are the molar ratios a
PbO : ZnO : U3O3 - 2 : 1 :1;
PbF2 : Tl2O : SiO3 i 2 : 1 : 1;PbO: ZnO: U 3 O 3-2 : 1: 1;
PbF 2 : Tl 2 O: SiO 3 i 2: 1: 1;
(PbO + ZnO + B2O3) : (PbF3 + Tl3O + ^iO3) zwischen 0:1 und 10:1 .(PbO + ZnO + B 2 O3): (PbF 3 + Tl 3 O + ^ iO 3 ) between 0: 1 and 10: 1.
Da der Ausdehnungskoeffizient des Kupfers 160.10 /K und der des Glaslots 100-120.10 /K beträgt, muß der Ausdehnungskoeffizient des FUllmaterials größer als 160.10 /K sein, denn nur so kann erreicht werden, daß der resultierende Ausdehnungskoeffizient I60.I0 /K beträgt.Since the expansion coefficient of copper is 160.10 / K and that of glass solder 100-120.10 / K, the The expansion coefficient of the filling material must be greater than 160.10 / K, because this is the only way to ensure that the resulting expansion coefficient I60.I0 / K amounts to.
809827/0522809827/0522
S.Smernos-3S.Smernos-3
Es ist Voraussetzung für die Verwendbarkeit eines Füllmaterials in einem Glaslot, daß die Glaslotschmelze mit dem Füllmaterial in Vtfechselwirkung tritt. Die Art dieser Wechselwirkung ist gegenwärtig noch nicht vollkommen geklärt. Es wird jedoch vermutet, daß die Glaslotschmelze das Füllmaterial in geringem Maß« chemisch angreift. Es ist dabei zu beachten, daß die Glasschmelze bei dem Verkapseln keine Temperatur, die größer als die eutektische Temperatur einer Gold-Silizium-Leaierung ist, haben darf.It is a prerequisite for the usability of a filler material in a glass solder so that the glass solder melt interacts with the filler material. The kind this interaction is not yet complete clarified. However, it is believed that the glass solder melted the filler material is chemically attacked to a small extent. It should be noted that the glass melt during the encapsulation no temperature that is higher than the eutectic temperature of a gold-silicon lamination, may have.
Versuche mit bekannten Füllmaterialien haben bei diesen Temperaturen unbefriedigende Resultate ergeben.Tests with known filling materials have given unsatisfactory results at these temperatures.
Gute Ergebnisse hingegen wurden mit einem körnigen Füllmaterial, dessen Körner rrit einer ungefähr 1 |jm dicken SiO^-Schicht überzogen wird, erzielt. Als Füllmaterial wurde CaF0, dessen AusdehnungskoeffizientOn the other hand, good results have been obtained with a granular filler material, the grains of which are covered by an approximately 1 μm thick SiO ^ layer. CaF 0 , its coefficient of expansion, was used as the filler material
-7
180.10 /K ist, verwendet.-7
180.10 / K is used.
Zur Herstellung dieses neuen Füllmaterials werden die CaF2-Körner in eine Lösung cinnr sili"iumorganischen Verbindung getaucht. Siliziurnorganische Verbindungen sind u.a, aus Römpps Chemie-Lexikon, 7.Auflage, 1975, Franck'sche Verlagsbuchhandlung, Stuttgart, bekannt. Als Lösungsmittel kann ein organisches Lösungsmittel verwendet werden. Machiery as Lösungsmittel bei Raumtemperatur verdunstet ist, werden die CaF^-Körner, die mit der siliziumorganischen Verbindung überzogen sind, erhitzt, wobei auf den CaFn-Körnern die gewünschte SiOo-Schicht entsteht.To produce this new filler material, the CaF 2 grains are immersed in a solution of an organosilicon compound. Organosilicon compounds are known, inter alia, from Römpps Chemie-Lexikon, 7th edition, 1975, Franck'sche Verlagsbuchhandlung, Stuttgart An organic solvent can be used.Machiery as the solvent has evaporated at room temperature, the CaF ^ grains, which are coated with the organosilicon compound, are heated, whereby the desired SiOo layer is formed on the CaFn grains.
809827/0522809827/0522
S.Smernos-3S.Smernos-3
Das gemahlene Glaslot wird mit den mit e.inor PiO„-Schicht überzogenen CaF2-Körnern so vermischt, daß das resultierende Gemenge 10 Gewichtsprozent Füllmaterial enthält. The ground glass solder is mixed with the CaF 2 grains coated with the e.inor PiO “layer in such a way that the resulting mixture contains 10 percent by weight of filler material.
Beim Aufschmelzen des mit dem Füllmaterial vermischten Glaslots reagiert die SiO^-Schicht auf den CaF2-Körnern mit der Glasschmelze. Der resultierende Ausdehnungskoeffizient ist angenähert gleich dem des Kupfers. Besonders vorteilhaft ist es hierbei, daß das Fließverhalten des Glaslots durch das neue Füllmaterial nicht beeinflußt wird.When the glass solder mixed with the filler material melts, the SiO ^ layer on the CaF 2 grains reacts with the glass melt. The resulting expansion coefficient is approximately the same as that of copper. It is particularly advantageous here that the flow behavior of the glass solder is not influenced by the new filler material.
809827/0522809827/0522
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772700273 DE2700273A1 (en) | 1977-01-05 | 1977-01-05 | GRAY FILLING MATERIAL FOR A GLASS-CERAMIC MATERIAL |
GB5343877A GB1569028A (en) | 1977-01-05 | 1977-12-22 | Solder-glass material filled with a granular filler |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772700273 DE2700273A1 (en) | 1977-01-05 | 1977-01-05 | GRAY FILLING MATERIAL FOR A GLASS-CERAMIC MATERIAL |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2700273A1 true DE2700273A1 (en) | 1978-07-06 |
Family
ID=5998162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19772700273 Withdrawn DE2700273A1 (en) | 1977-01-05 | 1977-01-05 | GRAY FILLING MATERIAL FOR A GLASS-CERAMIC MATERIAL |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE2700273A1 (en) |
GB (1) | GB1569028A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0175361A2 (en) * | 1984-09-19 | 1986-03-26 | Olin Corporation | glass composite |
US4775647A (en) * | 1984-09-19 | 1988-10-04 | Olin Corporation | Sealing glass composite |
US4805009A (en) * | 1985-03-11 | 1989-02-14 | Olin Corporation | Hermetically sealed semiconductor package |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752521A (en) * | 1984-09-19 | 1988-06-21 | Olin Corporation | Sealing glass composite |
US4801488A (en) * | 1984-09-19 | 1989-01-31 | Olin Corporation | Sealing glass composite |
-
1977
- 1977-01-05 DE DE19772700273 patent/DE2700273A1/en not_active Withdrawn
- 1977-12-22 GB GB5343877A patent/GB1569028A/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0175361A2 (en) * | 1984-09-19 | 1986-03-26 | Olin Corporation | glass composite |
EP0175361A3 (en) * | 1984-09-19 | 1987-01-28 | Olin Corporation | Sealing glass composite |
US4775647A (en) * | 1984-09-19 | 1988-10-04 | Olin Corporation | Sealing glass composite |
US4805009A (en) * | 1985-03-11 | 1989-02-14 | Olin Corporation | Hermetically sealed semiconductor package |
Also Published As
Publication number | Publication date |
---|---|
GB1569028A (en) | 1980-06-11 |
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