KR890007441A - 산화물 초전도 성형체 및 그 제조방법 - Google Patents
산화물 초전도 성형체 및 그 제조방법 Download PDFInfo
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- KR890007441A KR890007441A KR1019880013418A KR880013418A KR890007441A KR 890007441 A KR890007441 A KR 890007441A KR 1019880013418 A KR1019880013418 A KR 1019880013418A KR 880013418 A KR880013418 A KR 880013418A KR 890007441 A KR890007441 A KR 890007441A
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- South Korea
- Prior art keywords
- oxide
- oxide superconducting
- layer
- superconducting molded
- molded body
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000002887 superconductor Substances 0.000 claims 10
- 229910000510 noble metal Inorganic materials 0.000 claims 9
- 238000000034 method Methods 0.000 claims 7
- 239000010949 copper Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 229910010272 inorganic material Inorganic materials 0.000 claims 3
- 239000011147 inorganic material Substances 0.000 claims 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 210000001577 neostriatum Anatomy 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 229910052723 transition metal Inorganic materials 0.000 claims 2
- 150000003624 transition metals Chemical class 0.000 claims 2
- 229910001316 Ag alloy Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910002367 SrTiO Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 1
- 150000001342 alkaline earth metals Chemical group 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 239000010970 precious metal Substances 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 238000005118 spray pyrolysis Methods 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 238000001308 synthesis method Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/704—Wire, fiber, or cable
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
- Y10T428/12618—Plural oxides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
내용없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도, 제2도, 제3도, 제4도 및 제5도는 각각 본발명의 산화물 초전도 성형체의 일실시예를 도시한 단면 설명도.
Claims (20)
- 기판상에 형성된 산화물 초전도체층의 적어도 그 일방측에 귀금속층이 설치되어 있는 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 적어도 편측에 귀금속층이 설치된 산화물 초전도체층이 귀금속층을 기체측으로 하여 기체상에 설치되어 있는 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 산화물 초전도체층의 양측에 귀금속층이 설치되어 있는 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 산화물 초전도체층과 귀금속층과의 사이에 천이금속, 그 합금 및 무기성 물질로 된군에서 선택된 물질로 되는 중간층을 갖는 것을 특징으로 하는 산화물 초전도 성형체.
- 제4항에 있어서, 무기성 물질이 생성자유 에네트기(△oG)가 BaO와 같은 정도 이하인 입방결정, 육방결정, 정방결정, 사방결정의 물질가운데 어느 한 물질인 것을 특징으로 하는 산화물 초전도 성형체.
- 제4항에 있어서, 무기성 물질이 MgO, BeO, BaO, SrO, TiO2, ZrO2, HfO2, BaTiO3, SrTiO3, BaZrO3, SrZrO3, BaHfO3및 SrHfO3로 된 군에서 선택된 물질인 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 산화물이 일반식 AB2Cu3Ox(식중 A는 Y, S, Sc 또는 희토류원소, B는 알칼리토금속, Cu는 동, O는 산소, X=7-δ 단 1δ0)로 나타나는 산화물로 되는 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 산화물이 BiSr2Ca2Cu3Ox로 나타나는 산화물로 된 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 산화물 초전도체가 Cu를 포함하는 산화물인 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 산화물 초전도체층의 두께가 01.~5μm 이고, 또 기체의 두께 또는 직경의 0.005∼0.5배의 범위인 것을 특징으로 하는 산화물 초전도 성형체.
- 제4항에 있어서, 중간층의 두께가 0.001~0.5μm 의 범위내이고, 귀금속층의 두께가 0.05~3μm 의 범위 내인 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 귀금속이 은 또는 은을 99-55wt% 함유하는 은 합금인 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 기체가 열팽창율이 5∼15×10-6/℃의 다결정성 금속 또는 세라믹제인 것을 특징으로 하는 산화물 초전도 성형체.
- 제1항에 있어서, 산화물 초전도 성형체가 선, 조, 판중의 어느 하나인 것을 특징으로 하는 산화물 초전도 성형체.
- 적어도 편측에 직접 또는 중간층을 통하여 귀금속층을 가지는 산화물 초전도체층을 기판상에 설치한 후, 이것을 산소함유 분위기 중에서 열처리하는 것을 특징으로 하는 산화물 초전도 성형체의 제조방법.
- 제15항에 있어서, 중간층으로서 0.001-0.5μm 의 범위내의 두께에 천이금속 또는 그 합금층을, 귀금속층으로서 0.05~3μm 의 범위내의 두께에 귀금속 또는 그 합금으로 되는 층을 형성한 것을 특징으로 하는 산화물 초전도 성형체의 제조방법.
- 제15항에 있어서, 가열처리를 산소분압 0.01기압 이상의 산소함유 분위기중에서 350℃ 이상으로 가열한 후 50℃/min 이하의 냉각속도로 적어도 200℃까지 냉각하는 것을 특징으로 하는 산화물 초전도 성형체의 제조방법.
- 제15항에 있어서, 기체가 선조체이고, 이 선조체의 직경 또는 두께 Y와 산화물 초전도체층의 두께 X와의 사이에 0.5YX0.001Y로 되는 관계식이 성립되도록 산화물 초전도체층을 형성하는 것을 특징으로 하는 산화물 초전도 성형체의 제조방법.
- 제15항에 있어서, 기체상에 설치하는 각각의 층을 물리적 증착법, 화학적 증착법, 플라즈마 스프레이법, 스크린 인쇄법, 스핀코오트법, 및 분무열분해법을 포함하는 박막합성법에 의하여 형성하는 것을 특징으로 하는 산화물 초전도 성형체의 제조방법.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP260864 | 1987-10-16 | ||
JP62260864A JPH01105412A (ja) | 1987-10-16 | 1987-10-16 | 酸化物超電導成形体の製造方法 |
JP267853 | 1987-10-23 | ||
JP26785387 | 1987-10-23 | ||
JP272736 | 1987-10-28 | ||
JP62272736A JPH01115009A (ja) | 1987-10-28 | 1987-10-28 | 酸化物超電導成形体及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890007441A true KR890007441A (ko) | 1989-06-19 |
KR970005157B1 KR970005157B1 (ko) | 1997-04-12 |
Family
ID=27334976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880013418A KR970005157B1 (ko) | 1987-10-16 | 1988-10-14 | 산화물 초전도 성형체 및 그 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4994435A (ko) |
EP (1) | EP0312015B1 (ko) |
KR (1) | KR970005157B1 (ko) |
CN (1) | CN1033336A (ko) |
AU (1) | AU610260B2 (ko) |
CA (1) | CA1324739C (ko) |
DE (1) | DE3877116T2 (ko) |
Families Citing this family (70)
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JPH01171247A (ja) * | 1987-12-25 | 1989-07-06 | Mitsubishi Metal Corp | 超伝導体配線の構造 |
KR900017216A (ko) * | 1988-04-30 | 1990-11-15 | 나까하라 쯔네오 | 초전도체 박막을 가지는 반도체 기판과 그 제조 방법 |
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JP3113256B2 (ja) * | 1989-03-31 | 2000-11-27 | 住友電気工業株式会社 | 酸化物超電導線、その製造方法およびそれを用いた製品 |
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JPH04795A (ja) * | 1990-04-17 | 1992-01-06 | Nkk Corp | 磁気シールド板 |
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DE69116422D1 (de) * | 1990-05-18 | 1996-02-29 | Ibm | Supraleitendes Mehrschichtkeramiksubstrat |
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EP0491496B1 (en) * | 1990-12-19 | 1995-09-13 | AT&T Corp. | Article comprising a superconductor/insulator layer structure, and method of making the article |
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DE19520205A1 (de) † | 1995-06-01 | 1996-12-05 | Siemens Ag | Resistive Strombegrenzungseinrichtung unter Verwendung von Hoch-T¶c¶Supraleitermaterial |
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US4316785A (en) * | 1979-11-05 | 1982-02-23 | Nippon Telegraph & Telephone Public Corporation | Oxide superconductor Josephson junction and fabrication method therefor |
JPS5887884A (ja) * | 1981-11-20 | 1983-05-25 | Nippon Telegr & Teleph Corp <Ntt> | 酸化物超伝導体回路の電極形成方法 |
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EP0283313B1 (en) * | 1987-03-20 | 1994-02-23 | Fujikura Ltd. | Method of producing oxide superconducting wire and oxide superconducting wire produced by this method |
JPH0634418B2 (ja) * | 1987-09-07 | 1994-05-02 | 株式会社半導体エネルギー研究所 | 超電導素子の作製方法 |
CA1340569C (en) * | 1987-05-05 | 1999-06-01 | Sungho Jin | Superconductive body having improved properties, and apparatus and systems comprising such a body |
AU607219B2 (en) * | 1987-05-29 | 1991-02-28 | Toray Industries, Inc. | Method of forming superconductive thin films and solutions for forming the same |
DE3855246T2 (de) * | 1987-07-06 | 1996-12-05 | Sumitomo Electric Industries | Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung |
KR900017216A (ko) * | 1988-04-30 | 1990-11-15 | 나까하라 쯔네오 | 초전도체 박막을 가지는 반도체 기판과 그 제조 방법 |
-
1988
- 1988-10-11 US US07/256,763 patent/US4994435A/en not_active Expired - Lifetime
- 1988-10-11 AU AU23613/88A patent/AU610260B2/en not_active Ceased
- 1988-10-12 CA CA000580117A patent/CA1324739C/en not_active Expired - Fee Related
- 1988-10-12 EP EP88116942A patent/EP0312015B1/en not_active Expired - Lifetime
- 1988-10-12 DE DE8888116942T patent/DE3877116T2/de not_active Expired - Fee Related
- 1988-10-14 KR KR1019880013418A patent/KR970005157B1/ko active IP Right Grant
- 1988-10-15 CN CN88107098A patent/CN1033336A/zh not_active Withdrawn
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CA1324739C (en) | 1993-11-30 |
EP0312015A2 (en) | 1989-04-19 |
KR970005157B1 (ko) | 1997-04-12 |
EP0312015A3 (en) | 1989-05-24 |
DE3877116D1 (de) | 1993-02-11 |
AU2361388A (en) | 1989-04-20 |
AU610260B2 (en) | 1991-05-16 |
DE3877116T2 (de) | 1993-05-19 |
US4994435A (en) | 1991-02-19 |
EP0312015B1 (en) | 1992-12-30 |
CN1033336A (zh) | 1989-06-07 |
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