JP2008303082A - エピタキシャル膜形成用配向基板の中間層及びエピタキシャル膜形成用配向基板 - Google Patents
エピタキシャル膜形成用配向基板の中間層及びエピタキシャル膜形成用配向基板 Download PDFInfo
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- JP2008303082A JP2008303082A JP2007149339A JP2007149339A JP2008303082A JP 2008303082 A JP2008303082 A JP 2008303082A JP 2007149339 A JP2007149339 A JP 2007149339A JP 2007149339 A JP2007149339 A JP 2007149339A JP 2008303082 A JP2008303082 A JP 2008303082A
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- epitaxial film
- substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
Abstract
【解決手段】基材と、基材の少なくとも一方に形成されるエピタキシャル膜との間に設けられるエピタキシャル膜形成用配向基板の中間層において、単層構造又は2層以上の多層構造を有し、基板と接触する層がインジウムスズ酸化物からなる中間層である。この中間層は、多層構造を有することができ、ITO層の上に、ニッケル、酸化ニッケル、酸化ジルコニウム、希土類酸化物、酸化マグネシウム、チタン酸ストロンチウム(STO)、チタン酸ストロンチウム・バリウム(SBTO)、窒化チタン、銀、パラジウム、金、イリジウム、ルテニウム、ロジウム、白金からなる層を少なくとも1層備えることができる。
【選択図】図1
Description
Claims (5)
- 基材と、該基材の少なくとも一方に形成されるエピタキシャル膜との間に設けられるエピタキシャル膜形成用配向基板の中間層において、
単層構造又は2層以上の多層構造を有し、
前記基板と接触する層がインジウムスズ酸化物からなることを特徴とする中間層。 - 多層構造を有し、インジウムスズ酸化物層の上に、ニッケル、酸化ニッケル、酸化ジルコニウム、希土類酸化物、酸化マグネシウム、チタン酸ストロンチウム(STO)、チタン酸ストロンチウム・バリウム(SBTO)、窒化チタン、銀、パラジウム、金、イリジウム、ルテニウム、ロジウム、白金からなる層を少なくとも1層備える請求項1記載のエピタキシャル膜形成用配向基板の中間層。
- エピタキシャル膜との接合面における面粗さRaが、10nm以下である請求項1又は請求項2記載のエピタキシャル膜形成用配向基板の中間層。
- インジウムスズ酸化物層の膜厚は、10〜1000nmである請求項1〜請求項3のいずれかに記載のエピタキシャル膜形成用配向基板の中間層。
- 請求項1〜請求項4のいずれかに記載の中間層を備えるエピタキシャル膜形成用配向基板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007149339A JP2008303082A (ja) | 2007-06-05 | 2007-06-05 | エピタキシャル膜形成用配向基板の中間層及びエピタキシャル膜形成用配向基板 |
US12/131,990 US20080305322A1 (en) | 2007-06-05 | 2008-06-03 | Interlayer of textured substrate for forming epitaxial film, and textured substrate for forming epitaxial film |
EP08010282A EP2000566A3 (en) | 2007-06-05 | 2008-06-05 | Interlayer of orientational substrate and orientational substrate for forming epitaxial film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007149339A JP2008303082A (ja) | 2007-06-05 | 2007-06-05 | エピタキシャル膜形成用配向基板の中間層及びエピタキシャル膜形成用配向基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008303082A true JP2008303082A (ja) | 2008-12-18 |
Family
ID=39816609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007149339A Pending JP2008303082A (ja) | 2007-06-05 | 2007-06-05 | エピタキシャル膜形成用配向基板の中間層及びエピタキシャル膜形成用配向基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080305322A1 (ja) |
EP (1) | EP2000566A3 (ja) |
JP (1) | JP2008303082A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8980797B2 (en) | 2011-08-24 | 2015-03-17 | Furukawa Electric Co., Ltd. | Method of manufacturing base material for superconducting conductor, method of manufacturing superconducting conductor, base material for superconducting conductor, and superconducting conductor |
WO2015041173A1 (ja) * | 2013-09-20 | 2015-03-26 | 国立大学法人京都大学 | 高温超伝導線材の製造方法および高温超伝導線材 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2905362B1 (en) * | 2012-10-05 | 2019-03-20 | Toyo Kohan Co., Ltd. | Substrate for epitaxial growth, manufacturing method therefor, and substrate for superconducting wire |
US9388499B2 (en) | 2014-05-28 | 2016-07-12 | Uchicago Argonne, Llc | Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion |
CN106637079B (zh) * | 2016-12-02 | 2018-12-07 | 西安交通大学 | 一种二次电子发射薄膜的缓冲层及其制备方法 |
Citations (6)
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JPH0227614A (ja) * | 1988-07-15 | 1990-01-30 | Nippon Sheet Glass Co Ltd | 酸化物超伝導薄膜の積層構造 |
JPH03504847A (ja) * | 1988-05-20 | 1991-10-24 | アライド―シグナル・インコーポレーテッド | 電着による微結晶配向超伝導セラミックスの製法およびそれにより製造される薄膜状超伝導セラミック |
DE4120258A1 (de) * | 1991-06-19 | 1992-12-24 | Siemens Ag | Verfahren zur herstellung einer schicht aus einem hochtemperatursupraleiter-material auf einem silizium-substrat |
JPH0669561A (ja) * | 1992-08-13 | 1994-03-11 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US5432151A (en) * | 1993-07-12 | 1995-07-11 | Regents Of The University Of California | Process for ion-assisted laser deposition of biaxially textured layer on substrate |
WO2006008893A1 (ja) * | 2004-07-16 | 2006-01-26 | Sumitomo Electric Industries, Ltd. | 薄膜材料およびその製造方法 |
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AU610260B2 (en) * | 1987-10-16 | 1991-05-16 | Furukawa Electric Co. Ltd., The | Oxide superconductor shaped body and method of manufacturing the same |
US5741377A (en) * | 1995-04-10 | 1998-04-21 | Martin Marietta Energy Systems, Inc. | Structures having enhanced biaxial texture and method of fabricating same |
US5651839A (en) * | 1995-10-26 | 1997-07-29 | Queen's University At Kingston | Process for engineering coherent twin and coincident site lattice grain boundaries in polycrystalline materials |
US6673387B1 (en) * | 2000-07-14 | 2004-01-06 | American Superconductor Corporation | Control of oxide layer reaction rates |
US20040023810A1 (en) * | 2002-07-26 | 2004-02-05 | Alex Ignatiev | Superconductor material on a tape substrate |
JP3854551B2 (ja) * | 2002-08-06 | 2006-12-06 | 財団法人国際超電導産業技術研究センター | 酸化物超電導線材 |
-
2007
- 2007-06-05 JP JP2007149339A patent/JP2008303082A/ja active Pending
-
2008
- 2008-06-03 US US12/131,990 patent/US20080305322A1/en not_active Abandoned
- 2008-06-05 EP EP08010282A patent/EP2000566A3/en not_active Withdrawn
Patent Citations (6)
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JPH03504847A (ja) * | 1988-05-20 | 1991-10-24 | アライド―シグナル・インコーポレーテッド | 電着による微結晶配向超伝導セラミックスの製法およびそれにより製造される薄膜状超伝導セラミック |
JPH0227614A (ja) * | 1988-07-15 | 1990-01-30 | Nippon Sheet Glass Co Ltd | 酸化物超伝導薄膜の積層構造 |
DE4120258A1 (de) * | 1991-06-19 | 1992-12-24 | Siemens Ag | Verfahren zur herstellung einer schicht aus einem hochtemperatursupraleiter-material auf einem silizium-substrat |
JPH0669561A (ja) * | 1992-08-13 | 1994-03-11 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US5432151A (en) * | 1993-07-12 | 1995-07-11 | Regents Of The University Of California | Process for ion-assisted laser deposition of biaxially textured layer on substrate |
WO2006008893A1 (ja) * | 2004-07-16 | 2006-01-26 | Sumitomo Electric Industries, Ltd. | 薄膜材料およびその製造方法 |
Non-Patent Citations (3)
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JPN6012068772; 川原一浩, 土井俊哉, 野崎秀也, 白樂善則, 嶋邦弘, 星野博史, 鹿島直二, 長屋重夫: '配向Niテ-プ上への導電性ITO中間層の作製' 低温工学・超電導学会講演概要集 Vol.75th, 20061120, Page.181 * |
JPN6012068775; NOSAKI S. et al.: 'Growth of Biaxially Oriented Conductive ITO Buffer Layers on Textured Ni Tapes for YBCO Coated Condu' IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY VOL.17, NO.2, 200706, pp.3447-3450 * |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8980797B2 (en) | 2011-08-24 | 2015-03-17 | Furukawa Electric Co., Ltd. | Method of manufacturing base material for superconducting conductor, method of manufacturing superconducting conductor, base material for superconducting conductor, and superconducting conductor |
WO2015041173A1 (ja) * | 2013-09-20 | 2015-03-26 | 国立大学法人京都大学 | 高温超伝導線材の製造方法および高温超伝導線材 |
JPWO2015041173A1 (ja) * | 2013-09-20 | 2017-03-02 | 国立大学法人京都大学 | 高温超伝導線材の製造方法および高温超伝導線材 |
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Publication number | Publication date |
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EP2000566A3 (en) | 2012-01-18 |
US20080305322A1 (en) | 2008-12-11 |
EP2000566A2 (en) | 2008-12-10 |
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