KR890005860A - 수지절연형 반도체장치 - Google Patents

수지절연형 반도체장치 Download PDF

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Publication number
KR890005860A
KR890005860A KR1019880011977A KR880011977A KR890005860A KR 890005860 A KR890005860 A KR 890005860A KR 1019880011977 A KR1019880011977 A KR 1019880011977A KR 880011977 A KR880011977 A KR 880011977A KR 890005860 A KR890005860 A KR 890005860A
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KR
South Korea
Prior art keywords
lead frame
semiconductor device
resin
mounting portion
insulated semiconductor
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Application number
KR1019880011977A
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English (en)
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KR910009419B1 (ko
Inventor
사다키 호소미
겐지 우네츠보
요시아키 다츠미
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Publication of KR890005860A publication Critical patent/KR890005860A/ko
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Publication of KR910009419B1 publication Critical patent/KR910009419B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

내용 없음

Description

수지절연형 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도와 제1b도는 본 발명의 1실시예에 따른 수지 절연형 반도체장치의 표면측과 뒷면측을 나타낸 사시도.
제3도와 제4도는 본 발명의 다른 실시예에 따른 수지절연형 반도체장치를 나타낸 단면도.
* 도면의 주요부분에 대한 부호의 설명
10, 50, 60 : 반도체장치 1, 51 : 반도체칩
2, 52 : 칩탑재부 3, 53 : 외부인출리이드
4, 54 : 리이드선 56 : 모울드수지
59 : 프레임고정부 6'59 : 수지층

Claims (4)

  1. 리이드프레임의 반도체칩탑재부(2)의 뒷면측에 절연 및 열도전용의 얇은 수지층(6')을 갖추면서, 상기 리이드프레임의 전단부(2')가 외부에 돌출되지 않도록 외부포장체용의 모울드수지(6)가 형성되어 있는 수지절연형 반도체장치에 있어서, 상기 모울드수지(6)의 형성시에 모울드금형의 프레임지지핀으로 상기 리이드프레임의 일부를 지지해줌으로써 형성되는 프레임지지구멍(8)이 리이드프레임의 뒷면측에는 존재하지 않고 리이드프레임의 표면측에만 존재하도록 형성시켜서 만들어진 것을 특징으로 하는 수지절연형 반도체장치.
  2. 제1항에 있어서, 상기 리이드프레임은 반도체칩탑재부(2)에 비해 리이드프레임전단부(2')의 위치가 높게 되도록 구부러져 형성된 것을 특징으로 하는 수지절연형 반도체장치.
  3. 제2항에 있어서, 상기 반도체칩탑재부(2)는 그 기단측(인출리이드)보다도 전단측(리이드프레임의 전단측)의 위치가 높게 되게끔 기단측이 수평면으로부터 각도(θ)로 기울어지도록 설정된 것을 특징으로 하는 수지절연형 반도체장치.
  4. 제1항에 있어서, 상기 리이드프레임은 반도체칩탑재부(2)의 상면과 리이드프레임전단부(2')의 상면이 동일한 평면으로 되어 있으면서, 상기 리이드프레임전단부(2')의 두께가 반도체칩탑재부(2)의 두께보다도 얇게 되도록 형성된 것을 특징으로 하는 수지절연형 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880011977A 1987-09-17 1988-09-16 수지절연형 반도체장치 KR910009419B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62232945A JPH0815165B2 (ja) 1987-09-17 1987-09-17 樹脂絶縁型半導体装置の製造方法
JP62-232945 1987-09-17

Publications (2)

Publication Number Publication Date
KR890005860A true KR890005860A (ko) 1989-05-17
KR910009419B1 KR910009419B1 (ko) 1991-11-15

Family

ID=16947315

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880011977A KR910009419B1 (ko) 1987-09-17 1988-09-16 수지절연형 반도체장치

Country Status (5)

Country Link
US (1) US5038200A (ko)
EP (1) EP0307946B1 (ko)
JP (1) JPH0815165B2 (ko)
KR (1) KR910009419B1 (ko)
DE (1) DE3852124T2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309027A (en) * 1992-06-15 1994-05-03 Motorola, Inc. Encapsulated semiconductor package having protectant circular insulators
DE9311223U1 (de) * 1993-07-27 1993-09-09 Siemens AG, 80333 München Mikrosensor mit Steckeranschluß
TW270213B (ko) * 1993-12-08 1996-02-11 Matsushita Electric Ind Co Ltd
US5886400A (en) * 1995-08-31 1999-03-23 Motorola, Inc. Semiconductor device having an insulating layer and method for making
JP3344684B2 (ja) * 1996-05-20 2002-11-11 株式会社村田製作所 電子部品
US6476481B2 (en) 1998-05-05 2002-11-05 International Rectifier Corporation High current capacity semiconductor device package and lead frame with large area connection posts and modified outline
JP3833464B2 (ja) * 2000-11-01 2006-10-11 株式会社三井ハイテック リードフレーム
US7466016B2 (en) * 2007-04-07 2008-12-16 Kevin Yang Bent lead transistor
EP2051298B1 (en) * 2007-10-18 2012-09-19 Sencio B.V. Integrated Circuit Package
US7839004B2 (en) * 2008-07-30 2010-11-23 Sanyo Electric Co., Ltd. Semiconductor device, semiconductor module, method for manufacturing semiconductor device, and lead frame
JP2010103411A (ja) * 2008-10-27 2010-05-06 Shindengen Electric Mfg Co Ltd 半導体装置及びその製造方法
TWI425907B (zh) * 2010-09-21 2014-02-01 Delta Electronics Inc 電子元件和散熱裝置之組合結構及其絕緣元件
CN104247012B (zh) * 2012-10-01 2017-08-25 富士电机株式会社 半导体装置及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946052A (ja) * 1982-09-08 1984-03-15 Nec Corp 樹脂封止絶縁型半導体装置
JPS59130449A (ja) * 1983-01-17 1984-07-27 Nec Corp 絶縁型半導体素子用リードフレーム
JPS6132434A (ja) * 1984-07-24 1986-02-15 Sanken Electric Co Ltd 樹脂封止型半導体装置の製造方法
JPS6163849U (ko) * 1984-09-29 1986-04-30
JPS6191937A (ja) * 1984-10-12 1986-05-10 Sanken Electric Co Ltd 樹脂封止型半導体装置の製造方法
JPS61208242A (ja) * 1985-03-13 1986-09-16 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
EP0307946A2 (en) 1989-03-22
EP0307946B1 (en) 1994-11-17
KR910009419B1 (ko) 1991-11-15
JPH0815165B2 (ja) 1996-02-14
EP0307946A3 (en) 1989-07-05
DE3852124D1 (de) 1994-12-22
US5038200A (en) 1991-08-06
JPS6474746A (en) 1989-03-20
DE3852124T2 (de) 1995-03-23

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