KR880013246A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR880013246A
KR880013246A KR1019880004590A KR880004590A KR880013246A KR 880013246 A KR880013246 A KR 880013246A KR 1019880004590 A KR1019880004590 A KR 1019880004590A KR 880004590 A KR880004590 A KR 880004590A KR 880013246 A KR880013246 A KR 880013246A
Authority
KR
South Korea
Prior art keywords
semiconductor device
metal base
hole
wiring
gallium arsenide
Prior art date
Application number
KR1019880004590A
Other languages
English (en)
Other versions
KR910002812B1 (ko
Inventor
다께시 세끼구찌
마사노리 니시구찌
Original Assignee
나까하라 쯔네오
스미도모덴기고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나까하라 쯔네오, 스미도모덴기고오교오 가부시기가이샤 filed Critical 나까하라 쯔네오
Publication of KR880013246A publication Critical patent/KR880013246A/ko
Application granted granted Critical
Publication of KR910002812B1 publication Critical patent/KR910002812B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 및 제 2 도는 본 발명에 관한 반도체장치의 실시예를 표시한 사시도, 제 3 도는 제 2 도에서의 중앙 단면도.

Claims (5)

  1. 방열용의 금속베이스와, 이 금속 베이스상에 고착되고, 적어도 표면에 배선이 형성되는 동시에 중앙부에 구멍부가 형성된 실리콘 배선판과, 상기 구멍부에 감입되어 상기 금속메이스에 고착되는 동시에, 상기 실리콘 기판표면의 배선과 와이어로 접속된 화합물 반도체칩을 구비한 장치.
  2. 제 1 항에 있어서, 상기 화합물 반도체가 갈륨비소인 반도체 장치.
  3. 제 2 항에 있어서, 상기 금속베이스가 갈륨비소와 근사한 열팽창계수를 가진 것인 반도체 장치.
  4. 제 3 항에 있어서, 상기 금속베이스가 구리 텅스텐합금으로 형성되어 있는 반도체 장치.
  5. 제 1 항에 있어서, 상기 구멍부의 측벽이 수평면에 대하여 54.7°의 각도로 이루는 결정방위(111)면인 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880004590A 1987-04-28 1988-04-22 반도체장치 KR910002812B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62105263A JPS63271944A (ja) 1987-04-28 1987-04-28 半導体装置
JP62-105263 1987-04-28

Publications (2)

Publication Number Publication Date
KR880013246A true KR880013246A (ko) 1988-11-30
KR910002812B1 KR910002812B1 (ko) 1991-05-04

Family

ID=14402770

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880004590A KR910002812B1 (ko) 1987-04-28 1988-04-22 반도체장치

Country Status (6)

Country Link
US (1) US5157479A (ko)
EP (1) EP0292725B1 (ko)
JP (1) JPS63271944A (ko)
KR (1) KR910002812B1 (ko)
CA (1) CA1307053C (ko)
DE (1) DE3888017T2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204555B1 (en) * 1996-10-10 2001-03-20 Samsung Electronics Co., Ltd. Microwave-frequency hybrid integrated circuit
FR2794571B1 (fr) * 1999-06-03 2003-07-04 Possehl Electronic France Sa Dispositif dissipateur de chaleur pour composants electroniques
WO2002013263A1 (fr) * 2000-08-04 2002-02-14 Possehl Electronic France S.A. Dispositif dissipateur de chaleur pour composants electroniques
JP4806803B2 (ja) * 2003-10-21 2011-11-02 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
US6933443B2 (en) * 2004-01-28 2005-08-23 Infineon Technologies North America Corp. Method for bonding ceramic to copper, without creating a bow in the copper
US20070080458A1 (en) * 2005-10-11 2007-04-12 Tsuyoshi Ogawa Hybrid module and method of manufacturing the same
US9704809B2 (en) * 2013-03-05 2017-07-11 Maxim Integrated Products, Inc. Fan-out and heterogeneous packaging of electronic components

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229272A (en) * 1975-08-29 1977-03-04 Fujitsu Ltd Method of forming radiation ray detecting device
US4246595A (en) * 1977-03-08 1981-01-20 Matsushita Electric Industrial Co., Ltd. Electronics circuit device and method of making the same
JPS5423388A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Semiconductor integrated-circuit device and its manufacture
JPS57112056A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor device
JPS58143556A (ja) * 1982-02-22 1983-08-26 Fujitsu Ltd 高密度集積回路用パツケ−ジ
JPS59107554A (ja) * 1982-12-13 1984-06-21 Hitachi Ltd 半導体モジユ−ル
JPS59151443A (ja) * 1983-02-17 1984-08-29 Fujitsu Ltd 半導体装置
US4630172A (en) * 1983-03-09 1986-12-16 Printed Circuits International Semiconductor chip carrier package with a heat sink
JPS6022345A (ja) * 1983-07-19 1985-02-04 Toyota Central Res & Dev Lab Inc 半導体装置
JPS60167358A (ja) * 1984-02-09 1985-08-30 Sumitomo Electric Ind Ltd 半導体素子塔載用回路基板
US4692791A (en) * 1984-07-13 1987-09-08 Texas Instruments Incorporated Monolithic IMPATT with stripline leads
JPS6174354A (ja) * 1984-09-19 1986-04-16 Sumitomo Electric Ind Ltd 高周波デバイス用パツケ−ジ
US4866501A (en) * 1985-12-16 1989-09-12 American Telephone And Telegraph Company At&T Bell Laboratories Wafer scale integration

Also Published As

Publication number Publication date
CA1307053C (en) 1992-09-01
KR910002812B1 (ko) 1991-05-04
US5157479A (en) 1992-10-20
DE3888017D1 (de) 1994-04-07
EP0292725A3 (en) 1990-05-16
EP0292725A2 (en) 1988-11-30
JPS63271944A (ja) 1988-11-09
EP0292725B1 (en) 1994-03-02
DE3888017T2 (de) 1994-07-21

Similar Documents

Publication Publication Date Title
KR0156013B1 (ko) 태브 집적회로에 대한 히트싱크 및 커버
KR890001180A (ko) 세라믹 패키지
KR850004174A (ko) 반도체장치
KR900019207A (ko) 수지밀봉형 반도체장치
KR970013239A (ko) 반도체장치 및 그 실장 구조
EP0368743A3 (en) High performance integrated circuit chip package and method of making same
KR930024090A (ko) 반도체칩
KR880014692A (ko) 반사경이 부착된 반도체 발광장치
ATE34249T1 (de) Leistungshalbleitermodul.
KR960006732A (ko) 부재의 냉각구조
KR920003485A (ko) 전력용 반도체 장치
US4471407A (en) Combination heat sink for a semiconductor
KR880013246A (ko) 반도체 장치
US4961125A (en) Apparatus and method of attaching an electronic device package and a heat sink to a circuit board
KR970060465A (ko) 표면 보상형 열 분산 장치
KR950012694A (ko) 반도체 장치
KR970008435A (ko) 반도체장치
KR940008054A (ko) 반도체 패키지의 실장구조
KR910003784A (ko) 반도체소자
KR950021441A (ko) 반도체 bga(ball grid array) 패키지
JPS6129158A (ja) 半導体装置
KR910001924A (ko) 반도체 장치
KR900015278A (ko) 칩 캐리어
KR920020629A (ko) 반도체소자의 냉각장치
JPS61212045A (ja) 半導体装置

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19960425

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee