KR950012694A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
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- KR950012694A KR950012694A KR1019940027250A KR19940027250A KR950012694A KR 950012694 A KR950012694 A KR 950012694A KR 1019940027250 A KR1019940027250 A KR 1019940027250A KR 19940027250 A KR19940027250 A KR 19940027250A KR 950012694 A KR950012694 A KR 950012694A
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Abstract
본 발명은 수백 MHz 이상의 고속 동작이 가능하게 되는 Cu제의 리이드 프레임을 사용하더라도 반도체 장치의 신뢰 성 이 저하하는 것을 방지 한다.
반도체 장치 (11)는 고속 동작, 방열 특성, 전기 특성에 뛰어나 있는 세라믹으로 이루어지는 외위기(10)인 베이스부(13)와 봉지부(14)에 의하여 반도체 칩 (12)이 봉지된 구조로 구성된다. 상기 반도체 칩(12)과 전기적으로 접속된 Cu성의 리이드 프레임(17)은 베이스부(13)와 봉지부(14)에 기워져 있고 리이드 프레임(17)
에는 상기 끼워진 부분에 위치하는 앵커 홀(17a)이 설치되어 있다. 이 앵커 홀(17a)내, 상기 끼워진 부분 있다. 따라서 수백 MHz 이상의 고속 동작이 가능해지는 Cu제의 리이드 프레임을 사용해도, 반도체 장치의 신뢰성이 저하하는 것을 방지할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 제1 의 실시예에 의한 반도체 장치의 요부를 나타내는 단면도,
제2도는 본 발명의 제1도에 보이는 반도체 장치에 있어서의 리이드 프레임의 요부를 나타내는 사시도.
제3도는 본 발명의 제2의 실시예에 의한 반도체 장치에 있어서의 리이드 프레임의 요부를 나타내는 사시도.
Claims (4)
- 베이스(13)와 봉지부(14)로 구성되는 외위기(10)와, 상기 외위기내에 설치된 반도체 칩(12)과 , 상기 반도체 칩과 전기적으로 접속되고, 상기 베이스부와 상기 봉지부에 기워진 Cu제의 리이드 프레임(17)과; 상기 리이드 프레임에 설치된 상기 끼워진 부분에 위치하는 앵커 홀(17a, 17c, l7d)과, 상기 앵커 홀내에서, 상기 끼워진 부분의 상기 리이드 프레임과 상기 베이스부 및 상기 봉지부 각각과의 사이에 설치된 유리계의 접착제 (16)를 구비하는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 리이드 프레임(17)에 있어서의 전원 라인에 상당하는 리이드(17b)를 이 이외의 리이드 보다 굵게 하는 것을 특징으로 하는 반도체 장치.
- 베이스부(13)와 봉지부(14)로 구성되는 외위기(10)와 , 상기 외위기 내에 설치된 반도기 칩(12)과 ;상기 반도체 칩과 전기적으로 접속되고 상기 베이스부와 상기 봉지부에 기워진 Cu제의 리이드 프레임(17)과 ; 상기 끼워진 부분에 있어서의 상기 리이드 프레임에 코팅된 폴리이미드(21,22)와: 상기 폴리이비드와 상기 베이스부 및 상기 봉지부 각각쪽의 사이에 설치된 유리계의 접착제(16)를 구비하는 것을 특징으로 하는 반도체 장치.
- 베이스부(13)와 봉지부(14)로 구성되는 외위기 (10)와 ; 상기 외위기내에 설치된 반도체칩(12)과 : 상기 반도체과 전기적으로 접속되고 상기 베이스부와 상기 봉지부에 끼워진 Cu제의 리이드 프레임 (17)과; 상기 리이드 프레임에 설치된 상기 끼워진 부분에 위치하는 앵커 홀(17a, 17c, l7d)과; 상기 앵커 홀내 및 상기 끼워진 부분에 있어서의 상기 리이드 프레임 각각에 코팅된 폴리이미드(21, 22)와; 상기 폴리이미드와 상기 베이스부 및 상기 봉지부 각각과의 사이에 설치된 유리계의 접착제(16)를 구비하는 것을 특징으로 하는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
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JP26633693 | 1993-10-25 | ||
JP93-266336 | 1993-10-25 |
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KR950012694A true KR950012694A (ko) | 1995-05-16 |
KR100191759B1 KR100191759B1 (ko) | 1999-06-15 |
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KR1019940027250A KR100191759B1 (ko) | 1993-10-25 | 1994-10-25 | 반도체 장치 |
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US (1) | US5783466A (ko) |
EP (1) | EP0650193A3 (ko) |
KR (1) | KR100191759B1 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0964240A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
US6404065B1 (en) * | 1998-07-31 | 2002-06-11 | I-Xys Corporation | Electrically isolated power semiconductor package |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
US6864574B1 (en) * | 1999-11-29 | 2005-03-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor package |
JP2002246515A (ja) * | 2001-02-20 | 2002-08-30 | Mitsubishi Electric Corp | 半導体装置 |
US6731002B2 (en) | 2001-05-04 | 2004-05-04 | Ixys Corporation | High frequency power device with a plastic molded package and direct bonded substrate |
US6583505B2 (en) * | 2001-05-04 | 2003-06-24 | Ixys Corporation | Electrically isolated power device package |
US6727585B2 (en) | 2001-05-04 | 2004-04-27 | Ixys Corporation | Power device with a plastic molded package and direct bonded substrate |
US6818477B2 (en) * | 2001-11-26 | 2004-11-16 | Powerwave Technologies, Inc. | Method of mounting a component in an edge-plated hole formed in a printed circuit board |
KR100902766B1 (ko) * | 2002-09-27 | 2009-06-15 | 페어차일드코리아반도체 주식회사 | 절연성 세라믹 히트 싱크를 갖는 디스크리트 패키지 |
JP2005005642A (ja) | 2003-06-16 | 2005-01-06 | Nec Tokin Corp | チップ型固体電解コンデンサ及びその製造方法 |
JP2006253183A (ja) * | 2005-03-08 | 2006-09-21 | Hitachi Ltd | 半導体パワーモジュール |
US8269338B2 (en) * | 2006-08-10 | 2012-09-18 | Vishay General Semiconductor Llc | Semiconductor device having improved heat dissipation capabilities |
CN102548341A (zh) * | 2010-12-10 | 2012-07-04 | 旭丽电子(广州)有限公司 | 散热壳体结构 |
US9245880B2 (en) * | 2013-10-28 | 2016-01-26 | Mosway Semiconductor Limited | High voltage semiconductor power switching device |
CN106920781A (zh) * | 2015-12-28 | 2017-07-04 | 意法半导体有限公司 | 半导体封装体和用于形成半导体封装体的方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US3829598A (en) * | 1972-09-25 | 1974-08-13 | Hutson Ind Inc | Copper heat sinks for electronic devices and method of making same |
US4129243A (en) * | 1975-07-30 | 1978-12-12 | General Electric Company | Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof |
JPS5753947A (en) * | 1980-09-17 | 1982-03-31 | Hitachi Ltd | Transistor and electronic device containing it |
JPS5968958A (ja) * | 1982-10-12 | 1984-04-19 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ組立体 |
JPS60113931A (ja) * | 1983-11-25 | 1985-06-20 | Toshiba Corp | 半導体装置 |
DE3684184D1 (de) * | 1985-06-20 | 1992-04-16 | Toshiba Kawasaki Kk | Verkapselte halbleiteranordnung. |
US5317194A (en) * | 1989-10-17 | 1994-05-31 | Kabushiki Kaisha Toshiba | Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink |
JPH05267500A (ja) * | 1992-03-19 | 1993-10-15 | Toshiba Corp | 樹脂封止型半導体装置 |
-
1994
- 1994-10-10 EP EP94115966A patent/EP0650193A3/en not_active Ceased
- 1994-10-25 KR KR1019940027250A patent/KR100191759B1/ko not_active IP Right Cessation
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1997
- 1997-03-20 US US08/821,385 patent/US5783466A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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EP0650193A3 (en) | 1996-07-31 |
US5783466A (en) | 1998-07-21 |
EP0650193A2 (en) | 1995-04-26 |
KR100191759B1 (ko) | 1999-06-15 |
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