KR890004882B1 - 드라이에칭 방법 및 장치 - Google Patents

드라이에칭 방법 및 장치 Download PDF

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Publication number
KR890004882B1
KR890004882B1 KR1019840007903A KR840007903A KR890004882B1 KR 890004882 B1 KR890004882 B1 KR 890004882B1 KR 1019840007903 A KR1019840007903 A KR 1019840007903A KR 840007903 A KR840007903 A KR 840007903A KR 890004882 B1 KR890004882 B1 KR 890004882B1
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KR
South Korea
Prior art keywords
workpiece
voltage
voltage waveform
potential
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840007903A
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English (en)
Korean (ko)
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KR850005145A (ko
Inventor
노보루 오오즈보
Original Assignee
가부시기가이샤 히다찌 세이사꾸쇼
미쓰다 가쓰시게
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Application filed by 가부시기가이샤 히다찌 세이사꾸쇼, 미쓰다 가쓰시게 filed Critical 가부시기가이샤 히다찌 세이사꾸쇼
Publication of KR850005145A publication Critical patent/KR850005145A/ko
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Publication of KR890004882B1 publication Critical patent/KR890004882B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
  • Plasma Technology (AREA)
KR1019840007903A 1983-12-14 1984-12-13 드라이에칭 방법 및 장치 Expired KR890004882B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58234319A JPS60126832A (ja) 1983-12-14 1983-12-14 ドライエツチング方法および装置
JP58-234319 1983-12-14

Publications (2)

Publication Number Publication Date
KR850005145A KR850005145A (ko) 1985-08-21
KR890004882B1 true KR890004882B1 (ko) 1989-11-30

Family

ID=16969143

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007903A Expired KR890004882B1 (ko) 1983-12-14 1984-12-13 드라이에칭 방법 및 장치

Country Status (5)

Country Link
US (1) US4622094A (enExample)
EP (1) EP0145015B1 (enExample)
JP (1) JPS60126832A (enExample)
KR (1) KR890004882B1 (enExample)
DE (1) DE3479843D1 (enExample)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
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JP2603217B2 (ja) * 1985-07-12 1997-04-23 株式会社日立製作所 表面処理方法及び表面処理装置
JPS62125626A (ja) * 1985-11-27 1987-06-06 Hitachi Ltd ドライエツチング装置
JPH0643637B2 (ja) * 1986-05-30 1994-06-08 株式会社日立製作所 プラズマ制御装置
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
US4767496A (en) * 1986-12-11 1988-08-30 Siemens Aktiengesellschaft Method for controlling and supervising etching processes
JPH0828345B2 (ja) * 1987-07-10 1996-03-21 株式会社日立製作所 ドライエッチング方法および装置
US4793895A (en) * 1988-01-25 1988-12-27 Ibm Corporation In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
US4950377A (en) * 1988-09-23 1990-08-21 Siemens Aktiengesellschaft Apparatus and method for reactive ion etching
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5236537A (en) * 1989-04-07 1993-08-17 Seiko Epson Corporation Plasma etching apparatus
US5133830A (en) * 1989-04-07 1992-07-28 Seiko Epson Corporation Method of pretreatment and anisotropic dry etching of thin film semiconductors
EP0395415B1 (en) * 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
US5194119A (en) * 1989-05-15 1993-03-16 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5163458A (en) * 1989-08-03 1992-11-17 Optek, Inc. Method for removing contaminants by maintaining the plasma in abnormal glow state
US5198072A (en) * 1990-07-06 1993-03-30 Vlsi Technology, Inc. Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
US5316645A (en) * 1990-08-07 1994-05-31 Canon Kabushiki Kaisha Plasma processing apparatus
JP2859721B2 (ja) * 1990-08-07 1999-02-24 キヤノン株式会社 プラズマ処理装置
JP2830978B2 (ja) * 1990-09-21 1998-12-02 忠弘 大見 リアクティブイオンエッチング装置及びプラズマプロセス装置
JP2543642B2 (ja) * 1991-01-18 1996-10-16 アプライド マテリアルズ インコーポレイテッド 高周波交流電気エネルギ―と相対的に低い周波数の交流電気的エネルギ―を有する、工作物を処理するためのシステムおよび方法
US5302882A (en) * 1991-09-09 1994-04-12 Sematech, Inc. Low pass filter for plasma discharge
US5330615A (en) * 1991-11-04 1994-07-19 Cheng Chu Symmetric double water plasma etching system
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US5325019A (en) * 1992-08-21 1994-06-28 Sematech, Inc. Control of plasma process by use of harmonic frequency components of voltage and current
JP3799073B2 (ja) * 1994-11-04 2006-07-19 株式会社日立製作所 ドライエッチング方法
FR2738984B1 (fr) * 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
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US6174450B1 (en) * 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6356097B1 (en) * 1997-06-20 2002-03-12 Applied Materials, Inc. Capacitive probe for in situ measurement of wafer DC bias voltage
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US6265831B1 (en) 1999-03-31 2001-07-24 Lam Research Corporation Plasma processing method and apparatus with control of rf bias
US6201208B1 (en) 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
JP4306149B2 (ja) * 2001-05-28 2009-07-29 株式会社デンソー 半導体装置の製造方法
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KR20100107509A (ko) 2001-09-14 2010-10-05 9222-9129 퀘벡 인코포레이티드 히스톤 데아세틸라아제의 억제제
JP4830288B2 (ja) * 2004-11-22 2011-12-07 富士電機株式会社 プラズマ制御方法およびプラズマ制御装置
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FR2951026B1 (fr) * 2009-10-01 2011-12-02 St Microelectronics Sa Procede de fabrication de resonateurs baw sur une tranche semiconductrice
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US8847159B2 (en) 2011-03-28 2014-09-30 Tokyo Electron Limited Ion energy analyzer
KR101909571B1 (ko) 2012-08-28 2018-10-19 어드밴스드 에너지 인더스트리즈 인코포레이티드 넓은 다이내믹 레인지 이온 에너지 바이어스 제어； 고속 이온 에너지 스위칭； 이온 에너지 제어와 펄스동작 바이어스 서플라이； 및 가상 전면 패널
JP6329543B2 (ja) * 2012-08-28 2018-05-23 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． 切り替えモードイオンエネルギー分布システムを制御する方法
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Also Published As

Publication number Publication date
JPS60126832A (ja) 1985-07-06
US4622094A (en) 1986-11-11
JPH0527244B2 (enExample) 1993-04-20
DE3479843D1 (en) 1989-10-26
EP0145015A3 (en) 1986-08-27
KR850005145A (ko) 1985-08-21
EP0145015A2 (en) 1985-06-19
EP0145015B1 (en) 1989-09-20

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