DE3479843D1 - Dry etching method and apparatus - Google Patents

Dry etching method and apparatus

Info

Publication number
DE3479843D1
DE3479843D1 DE8484115200T DE3479843T DE3479843D1 DE 3479843 D1 DE3479843 D1 DE 3479843D1 DE 8484115200 T DE8484115200 T DE 8484115200T DE 3479843 T DE3479843 T DE 3479843T DE 3479843 D1 DE3479843 D1 DE 3479843D1
Authority
DE
Germany
Prior art keywords
dry etching
etching method
dry
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484115200T
Other languages
English (en)
Inventor
Toru Otsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3479843D1 publication Critical patent/DE3479843D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
DE8484115200T 1983-12-14 1984-12-12 Dry etching method and apparatus Expired DE3479843D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58234319A JPS60126832A (ja) 1983-12-14 1983-12-14 ドライエツチング方法および装置

Publications (1)

Publication Number Publication Date
DE3479843D1 true DE3479843D1 (en) 1989-10-26

Family

ID=16969143

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484115200T Expired DE3479843D1 (en) 1983-12-14 1984-12-12 Dry etching method and apparatus

Country Status (5)

Country Link
US (1) US4622094A (de)
EP (1) EP0145015B1 (de)
JP (1) JPS60126832A (de)
KR (1) KR890004882B1 (de)
DE (1) DE3479843D1 (de)

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JPH0643637B2 (ja) * 1986-05-30 1994-06-08 株式会社日立製作所 プラズマ制御装置
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
US4767496A (en) * 1986-12-11 1988-08-30 Siemens Aktiengesellschaft Method for controlling and supervising etching processes
JPH0828345B2 (ja) * 1987-07-10 1996-03-21 株式会社日立製作所 ドライエッチング方法および装置
US4793895A (en) * 1988-01-25 1988-12-27 Ibm Corporation In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
US4950377A (en) * 1988-09-23 1990-08-21 Siemens Aktiengesellschaft Apparatus and method for reactive ion etching
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5236537A (en) * 1989-04-07 1993-08-17 Seiko Epson Corporation Plasma etching apparatus
US5133830A (en) * 1989-04-07 1992-07-28 Seiko Epson Corporation Method of pretreatment and anisotropic dry etching of thin film semiconductors
DE69017744T2 (de) * 1989-04-27 1995-09-14 Fuji Electric Co Ltd Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas.
US5194119A (en) * 1989-05-15 1993-03-16 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5163458A (en) * 1989-08-03 1992-11-17 Optek, Inc. Method for removing contaminants by maintaining the plasma in abnormal glow state
US5198072A (en) * 1990-07-06 1993-03-30 Vlsi Technology, Inc. Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
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JP2830978B2 (ja) * 1990-09-21 1998-12-02 忠弘 大見 リアクティブイオンエッチング装置及びプラズマプロセス装置
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US5325019A (en) * 1992-08-21 1994-06-28 Sematech, Inc. Control of plasma process by use of harmonic frequency components of voltage and current
JP3799073B2 (ja) 1994-11-04 2006-07-19 株式会社日立製作所 ドライエッチング方法
FR2738984B1 (fr) * 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
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US6174450B1 (en) * 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6356097B1 (en) * 1997-06-20 2002-03-12 Applied Materials, Inc. Capacitive probe for in situ measurement of wafer DC bias voltage
DE69723699T2 (de) 1997-10-08 2004-06-17 Recherche et Développement du Groupe Cockerill Sambre, en abrégé: RD-CS Verfahren zum Reinigen eines Substrats und Vorrichtung zur Durchführung des Verfahrens
US6265831B1 (en) 1999-03-31 2001-07-24 Lam Research Corporation Plasma processing method and apparatus with control of rf bias
US6201208B1 (en) 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
JP4306149B2 (ja) * 2001-05-28 2009-07-29 株式会社デンソー 半導体装置の製造方法
US6677711B2 (en) * 2001-06-07 2004-01-13 Lam Research Corporation Plasma processor method and apparatus
JP4219628B2 (ja) * 2001-07-27 2009-02-04 東京エレクトロン株式会社 プラズマ処理装置および基板載置台
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JP4830288B2 (ja) * 2004-11-22 2011-12-07 富士電機株式会社 プラズマ制御方法およびプラズマ制御装置
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7875859B2 (en) * 2008-03-31 2011-01-25 Tokyo Electron Limited Ion energy analyzer and methods of manufacturing and operating
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US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
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US8816281B2 (en) 2011-03-28 2014-08-26 Tokyo Electron Limited Ion energy analyzer and methods of manufacturing the same
JP6329543B2 (ja) * 2012-08-28 2018-05-23 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． 切り替えモードイオンエネルギー分布システムを制御する方法
WO2014036000A1 (en) 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
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US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
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US20170358431A1 (en) * 2016-06-13 2017-12-14 Applied Materials, Inc. Systems and methods for controlling a voltage waveform at a substrate during plasma processing
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KR20200100642A (ko) 2017-11-17 2020-08-26 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱을 위한 이온 바이어스 전압의 공간 및 시간 제어
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Also Published As

Publication number Publication date
EP0145015A2 (de) 1985-06-19
JPS60126832A (ja) 1985-07-06
EP0145015A3 (en) 1986-08-27
JPH0527244B2 (de) 1993-04-20
US4622094A (en) 1986-11-11
KR850005145A (ko) 1985-08-21
KR890004882B1 (ko) 1989-11-30
EP0145015B1 (de) 1989-09-20

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Legal Events

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