KR880011962A - 광 반도체 장치 - Google Patents

광 반도체 장치 Download PDF

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KR880011962A
KR880011962A KR1019880002879A KR880002879A KR880011962A KR 880011962 A KR880011962 A KR 880011962A KR 1019880002879 A KR1019880002879 A KR 1019880002879A KR 880002879 A KR880002879 A KR 880002879A KR 880011962 A KR880011962 A KR 880011962A
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semiconductor
superlattice
layer
band gap
semiconductor device
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KR910003465B1 (ko
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마사히고 곤도우
시게가즈 미나가와
다가시 가지무라
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract

내용없음

Description

광 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 Al0.5Ga0.5As 혼합 결정 반도체와 (AlAs)1(GaGs)1초격자 반도체의 Ⅲ족 원자 배치의 모델을 도시한 도면,
제2도는 AlGaAs계 혼합 결정 반도체 및 분자층 초격자 반도체에서의 조성과 밴드 갭의 관계를 도시한 도면,
제3도는 A는 실시예 1에 있어서의 반도체 레이저 소자의 단면도.

Claims (9)

  1. 다른 종류의 반도체 재료를 주기적으로 적층하고, 또 각 반도체의 각층이 1-10의 1 분자층의 두께를 갖는 초격자 반도체 영역을 가지는 광 반도체 장치.
  2. 다른 반도체를 주기적으로 적층해서 되는 초격자 반도체를 가지고 상기 초격자 반도체의 각 층은 1-10의 1 분자층 두께이고, 또한 상기 초격자 반도체의 밴드 갭은 상기 초격자 반도체와 등가적으로 조성이 같은 혼합 결정 반도체의 밴드갭과 다른 초격자 반도체 영역을 가지는 광 반도체 장치.
  3. 특허청구의 범위 제1항에 있어서, 상기 초격자 반도체의 밴드 갭쪽이 등가적으로 조성이 같은 혼합결정 반도에의 밴드 갭보다 큰 광 반도체 장치.
  4. 특허청구의 범위 제1항에 있어서, 상기 초격자 반도체는 Ⅱ-Ⅵ족 화합물 반도체의 적층에 의해서 되어 있는 광 반도체 장치.
  5. 특허청구의 범위 제1항에 있어서, 상기 초격자 반도체는 ZnCdS계, ZnTeSe계 및 AlGaInP계로 되는 군 중에서 선택된 1개의 계인 광 반도체 장치.
  6. 특허청구의 범위 제2항에 있어서, 상기 광 반도체 장치는 이중 헤테로 구조의 반도체 레이저이고, 상기 초격자 반도체는 클래드층인 광 반도체 장치.
  7. 특허청구의 범위 제5항에 있어서, 상기 이중 헤테로 구조의 반도체 레이저는 제1도전형 GaAs기판, 상기 GaAs 기판 위에 형성된 제1도전형 GaAs 버퍼층, 상기 GaAs 버퍼층 위에 형성된 제1도전형의 상기 초격자 반도체로 되는 제1클랜드층, 상기 제1클래층 위에 형성된 상기 제1클래드층 보다 밴드 갭이 작고, 또한 굴절율이 큰(AlxGa1-x)0.5In0.5P(O≤X≤0.7) 활성층, 상기 활성층 위에 형성된 제1도전층은 반대 도전형인 제2도전형의 상기 초격자 반도체로 되는 상기 활성층 보다 밴드 갭이 크고, 또한 굴절율이 작은 제2클래드층, 사기 제1도전형 및 제2도전형층에 각각 전기적으로 접속된 전극을 가지고, 또한 상기 제1 및 제2클래드층의 초격자 반도체는 2개의 1분자층인 InP와 2개의 1분자층인 AIP를 교대로 적층한 광반도체 장치.
  8. 특허청구의 범위 제1항에 있어서, 상기 반도체 장치는 이중 헤테로 구조의 반도체 레이저이며 상기 초격자 반도체는 활성층이고, 또한 상기 초격자 반도체의 밴드 갭은 등가적으로 조성이 같은 혼합 결정 반도체의 밴드 갭보다 작은 광 반도체 장치.
  9. 특허청구의 범위 제8항에 있어서, 상기 이중 헤테로 구조의 반도체 레이저는 제1도전형의 GaAs 기판, 상기 GaAs기판 위에 형성된 제1도전형의 ZnSe로 되는 제1클래드층, 상기 제1클래드층 위에 형성된 상기 제1클래드층 보다 밴드 갭이 작고, 또한 굴절율이 큰 상기 초격자 반도체로 되는 활성층, 상기 활성층 위에 형성된 제도전층은 반대 도전형인 제2도전형의 ZnSe로 된 상기 활성층 보다 밴드 갭이 크고, 또한 굴절율이 작은 제2클래드층, 상기 제1 및 제2도전형의 층에 각각 전기적으로 접속된 전극을 갖고 또한 상기 활성층의 초격자 반도체는 각각 1층씩 되는(InP)(GaP)(InP)(AlP)(InP)(Alp)구조를 1주기로하는 광 반도체 장치.
    ※ 참곳사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880002879A 1987-03-25 1988-03-18 광 반도체장치 KR910003465B1 (ko)

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JP6883087A JP2544378B2 (ja) 1987-03-25 1987-03-25 光半導体装置

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US4794606A (en) 1988-12-27
KR910003465B1 (ko) 1991-05-31
EP0284031A2 (en) 1988-09-28
JPS63236387A (ja) 1988-10-03
JP2544378B2 (ja) 1996-10-16
EP0284031A3 (en) 1989-03-29

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