JPS57187986A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS57187986A
JPS57187986A JP7221181A JP7221181A JPS57187986A JP S57187986 A JPS57187986 A JP S57187986A JP 7221181 A JP7221181 A JP 7221181A JP 7221181 A JP7221181 A JP 7221181A JP S57187986 A JPS57187986 A JP S57187986A
Authority
JP
Japan
Prior art keywords
semiconductor
band gap
semiconductor crystal
instance
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7221181A
Other languages
Japanese (ja)
Other versions
JPS623999B2 (en
Inventor
Takashi Fukui
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7221181A priority Critical patent/JPS57187986A/en
Publication of JPS57187986A publication Critical patent/JPS57187986A/en
Publication of JPS623999B2 publication Critical patent/JPS623999B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a highly efficient light emission diode of a visible rays band by a method wherein indirect transition-type semiconductor crystal, which does not have light emission property originally is given a super lattice composition and is used as an activation layer. CONSTITUTION:An activation layer 3, made of a semiconductor super lattice composition in which a periodical construction is composed by piling semiconductor crystal layers, each of which has a cartain thickness of 500Angstrom and has a lattice constant identical with a semiconductor crystal layer with an indirect transition-type band gap, for instance a 100 plain GaP substrate 1 and has small electron affinity and large band gap, reciprocally on the substrate 1, is composed of, for instance, GaP-AlGaP. And on and under the activation layer 3, clad layers 2 and 4 composed of the same semiconductor material as the semiconductor crystal of the super lattice which has wider band gap or of a semiconductor which has wide band gap and small refractive index, for instance AlGaP are formed.
JP7221181A 1981-05-15 1981-05-15 Semiconductor light emitting element Granted JPS57187986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7221181A JPS57187986A (en) 1981-05-15 1981-05-15 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7221181A JPS57187986A (en) 1981-05-15 1981-05-15 Semiconductor light emitting element

Publications (2)

Publication Number Publication Date
JPS57187986A true JPS57187986A (en) 1982-11-18
JPS623999B2 JPS623999B2 (en) 1987-01-28

Family

ID=13482673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7221181A Granted JPS57187986A (en) 1981-05-15 1981-05-15 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS57187986A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59197187A (en) * 1983-04-07 1984-11-08 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device
JPS59219977A (en) * 1983-05-17 1984-12-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device
JPS607184A (en) * 1983-06-24 1985-01-14 Rikagaku Kenkyusho Light emitting element wherein energy barriers are provided
JPS61244086A (en) * 1985-04-22 1986-10-30 Sharp Corp Semiconductor laser element
JPS63207186A (en) * 1987-02-24 1988-08-26 Nippon Telegr & Teleph Corp <Ntt> Material for visible-light region optical element
JPS63236387A (en) * 1987-03-25 1988-10-03 Hitachi Ltd Optical semiconductor device
US7496025B2 (en) 2001-11-19 2009-02-24 Hitachi, Ltd. Optical disc drive apparatus with an indirect semiconductor laser containing an asymmetric quantum well structure

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS *
APPLIED PHYSICS3 9-14=1974 *
HETEROSTRUCTURE LASERS PARTA=1978 *
HETEROSTRUCTURE LASERS PARTB=1978 *
JOUNAL OF APPLIED PHYSICS *
PHYSICAL REVIEW *
PHYSICAL REVIEW LETTERS *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59197187A (en) * 1983-04-07 1984-11-08 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device
JPH048956B2 (en) * 1983-04-07 1992-02-18
JPS59219977A (en) * 1983-05-17 1984-12-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device
JPS607184A (en) * 1983-06-24 1985-01-14 Rikagaku Kenkyusho Light emitting element wherein energy barriers are provided
JPS61244086A (en) * 1985-04-22 1986-10-30 Sharp Corp Semiconductor laser element
JPS63207186A (en) * 1987-02-24 1988-08-26 Nippon Telegr & Teleph Corp <Ntt> Material for visible-light region optical element
JPS63236387A (en) * 1987-03-25 1988-10-03 Hitachi Ltd Optical semiconductor device
US7496025B2 (en) 2001-11-19 2009-02-24 Hitachi, Ltd. Optical disc drive apparatus with an indirect semiconductor laser containing an asymmetric quantum well structure

Also Published As

Publication number Publication date
JPS623999B2 (en) 1987-01-28

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