KR880006772A - 히트 싱크를 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지 - Google Patents

히트 싱크를 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지 Download PDF

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Publication number
KR880006772A
KR880006772A KR860009285A KR860009285A KR880006772A KR 880006772 A KR880006772 A KR 880006772A KR 860009285 A KR860009285 A KR 860009285A KR 860009285 A KR860009285 A KR 860009285A KR 880006772 A KR880006772 A KR 880006772A
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South Korea
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region
light emitting
attaching
heat sink
emitting device
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KR860009285A
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KR890002811B1 (ko
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김번중
김기준
남춘우
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강진구
삼성반도체통신 주식회사
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Priority to KR1019860009285A priority Critical patent/KR890002811B1/ko
Priority to DE19873735818 priority patent/DE3735818A1/de
Priority to GB08725476A priority patent/GB2197126A/en
Priority to JP62273615A priority patent/JPS63122293A/ja
Priority to FR878715203A priority patent/FR2606211B1/fr
Publication of KR880006772A publication Critical patent/KR880006772A/ko
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Publication of KR890002811B1 publication Critical patent/KR890002811B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/11—Device type
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    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01S5/00—Semiconductor lasers
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
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    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

내용 없음

Description

히트 싱크를 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 발광소자 과전류 보호회로도.
제4도는 본 발명에 따른 실리콘 보조칩의 단면도.
제5도는 본 발명에 따른 실리콘 보조칩을 내장한 패키지의 단면도.

Claims (1)

  1. 몸체(40)와 일체로된 방열판재(17)와 제1스템(21) 및 상기 스템(21)과 절연물질(22)을 통해 절연되고 패키지(19) 내부로 신장된 제2시템(20)과 투시창(24)을 가진 캡(60)으로 구성된 발광소자 패키지에 있어서, 발광소자 부착영역(50)과 상기 발광소자 부착영역(50)과 이격하여 제2도전형의 분리영역(31)을 형성하고 상기 분리영역(31)내에 제1도 전형이 저항영역(32)을 형성하고 상기 분리영역(31)과 저항영역(32) 상부에 절연층(29)을 형성하며 상기 저항영역(32)의 소정부분 절연층을 개구로 하여 제1및 제2보호저항 접속부(30)(30')를 형성하며 후면 금속층(7)을 형성한 실리콘 보조칩을 구비하여 상기 실리콘 보조칩의 후면금속층(7)에 부착하며 상기 발광소자(15)를 상기 실리콘 보조칩의 발광소자 부착영역(50)에 부착하며 상기 제1보호저항 접속부(30)와 제1시스템 및 상기 제2보호저항 접속부(30')와 제2시스템과를 도선 용접하여 형성된 히트 싱크를 겸한 과전류 파괴 방지용 집적회로를 내장한 발광소자 패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860009285A 1986-11-04 1986-11-04 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지 KR890002811B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019860009285A KR890002811B1 (ko) 1986-11-04 1986-11-04 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지
DE19873735818 DE3735818A1 (de) 1986-11-04 1987-10-22 Kapsel eines leuchtelements mit integrierter kuehlkoerper- und ueberlastungsstromschutzschaltung
GB08725476A GB2197126A (en) 1986-11-04 1987-10-30 A light emitting semi- conductor device having current overload protection
JP62273615A JPS63122293A (ja) 1986-11-04 1987-10-30 発光素子パッケージ
FR878715203A FR2606211B1 (fr) 1986-11-04 1987-11-03 Boitier de composant electroluminescent avec circuit radiateur integre assurant la protection contre les surintensites

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009285A KR890002811B1 (ko) 1986-11-04 1986-11-04 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지

Publications (2)

Publication Number Publication Date
KR880006772A true KR880006772A (ko) 1988-07-25
KR890002811B1 KR890002811B1 (ko) 1989-07-31

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ID=19253177

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009285A KR890002811B1 (ko) 1986-11-04 1986-11-04 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지

Country Status (5)

Country Link
JP (1) JPS63122293A (ko)
KR (1) KR890002811B1 (ko)
DE (1) DE3735818A1 (ko)
FR (1) FR2606211B1 (ko)
GB (1) GB2197126A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030049211A (ko) * 2001-12-14 2003-06-25 서오텔레콤(주) 발광다이오드소자

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DE4019091A1 (de) * 1990-06-15 1991-12-19 Battelle Institut E V Waermeableitungseinrichtung fuer halbleiterbauelemente und verfahren zu deren herstellung
KR930015139A (ko) * 1991-12-18 1993-07-23 이헌조 빛세기 변화 가능용 발광다이오드의 제조방법
DE4205789A1 (de) * 1992-02-26 1993-09-02 Abb Patent Gmbh Lichtquelle mit mindestens einem lichtemittierenden bauelement und einer vorgeschalteten schutzeinrichtung
JPH08264898A (ja) * 1995-03-23 1996-10-11 Mitsubishi Electric Corp 半導体レーザ装置
DE19612388C2 (de) * 1996-03-28 1999-11-04 Siemens Ag Integrierte Halbleiterschaltung insb. optoelektronisches Bauelement mit Überspannungsschutz
DE102006015335B4 (de) * 2006-04-03 2013-05-02 Ivoclar Vivadent Ag Halbleiter-Strahlungsquelle sowie Lichthärtgerät
GB2479120A (en) * 2010-03-26 2011-10-05 Cambridge Display Tech Ltd Organic electrolumunescent device having conductive layer connecting metal over well defining layer and cathode
FR3001357B1 (fr) * 2013-01-22 2015-02-06 Sylumis Support de fixation mecanique et de raccordement electrique de diodes electroluminescentes

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
DE2542174C3 (de) * 1974-09-21 1980-02-14 Nippon Electric Co., Ltd., Tokio Halbleiterlaservorrichtung
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
NL178376C (nl) * 1978-06-19 1986-03-03 Philips Nv Koppelelement met een lichtbron en een lens.
FR2445617A1 (fr) * 1978-12-28 1980-07-25 Ibm France Resistance a tension de claquage amelioree obtenue par une double implantation ionique dans un substrat semi-conducteur et son procede de fabrication
GB2098714B (en) * 1980-06-04 1984-08-22 Tranilamp Ltd Led cluster assembly
JPS6081879A (ja) * 1983-10-11 1985-05-09 Nec Corp 発光ダイオ−ド
JPS60186076A (ja) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> 半導体発光装置
JPS61107783A (ja) * 1984-10-30 1986-05-26 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
DE3534744A1 (de) * 1985-09-28 1987-04-09 Standard Elektrik Lorenz Ag Laservorrichtung mit stabilisierter ausgangsleistung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030049211A (ko) * 2001-12-14 2003-06-25 서오텔레콤(주) 발광다이오드소자

Also Published As

Publication number Publication date
GB8725476D0 (en) 1987-12-02
FR2606211B1 (fr) 1991-07-12
GB2197126A (en) 1988-05-11
KR890002811B1 (ko) 1989-07-31
JPS63122293A (ja) 1988-05-26
FR2606211A1 (fr) 1988-05-06
DE3735818A1 (de) 1988-05-11

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