KR880005689A - 전계효과 트랜지스터 - Google Patents
전계효과 트랜지스터 Download PDFInfo
- Publication number
- KR880005689A KR880005689A KR870011772A KR870011772A KR880005689A KR 880005689 A KR880005689 A KR 880005689A KR 870011772 A KR870011772 A KR 870011772A KR 870011772 A KR870011772 A KR 870011772A KR 880005689 A KR880005689 A KR 880005689A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- field effect
- effect transistor
- alinas
- type
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 6
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예를 설명하기 위한 단면도.
제2도는 본 발명의 제2실시예를 설명하기 위한 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : InP기판 2 : 제1의 AlInAs층
3 : GaInAs층 4 : 2차원전자층
5 : 제2의 AlInAs층 6 : 제어전극
7 : 소오스전극 8 : 드레인전극
12 : n형 InP층 14 : AlInAs층
15 : 2차원전자층
Claims (8)
- InP기판위에 n형 불순물이 첨가된 제1의 AlInAs층을 형성하고, 이 제1의 AlInAs층위에 불순물이 첨가되어있지않은 GaInAs층을 형성하고, 이 GaInAs층위에 제2의 AlInAs층을 형성하고, 이 제2의 AlInAs층위에 제어전극을 형성하고, 이 제어전극의 양쪽에 상기 GaInAs층에 대해서 저항성 접촉이 되는 소오스전극 및 드레인전극을 형성한 것을 특징으로하는 전계효과 트랜지스터.
- 제1항에 있어서, 상기 제2의 AlInAs층에 불순물이 첨가되어 있지않은 것을 특징으로하는 전계효과 트랜지스터.
- 제1항에 있어서, 상기 제2의 AlInAs층의 전도형이 p형인것을 특징으로하는 전계효과 트랜지스터.
- 제1항에 있어서, 상기 제2의 AlInAs층의 전도형이 n형인것을 특징으로하는 전계효과 트랜지스터.
- InP기판위에 n형 불순물이 첨가된 InP층을 형성하고, 이 InP층위에 불순물이 첨가되어 있지않은 GaInAs층을 형성하고, 이 GaInAs층위에 AlInAs층을 형성하고, 이 AlInAs층위에 제어전극을 형성하고, 이 제어전극의 양쪽에 상기 GaInAs층에 대해서 저항성 접촉이 되는 소오스전극 및 드레인 전극을 형성한 것을 특징으로하는 전계효과 트랜지스터.
- 제5항에 있어서, 상기 AlInAs층에 불순물이 첨가되어 있지않은 것을 특징으로하는 전계효과 트랜지스터.
- 제5항에 있어서, 상기 AlInAs층의 전도형이 p형인것을 특징으로하는 전계효과 트랜지스터.
- 제5항에 있어서, 상기 AlInAs층의 전도형이 n형인것을 특징으로하는 전계효과 트랜지스터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61254180A JPS63107172A (ja) | 1986-10-24 | 1986-10-24 | 電界効果トランジスタ |
JP254181 | 1986-10-24 | ||
JP254180 | 1986-10-24 | ||
JP61-254181 | 1986-10-24 | ||
JP61-254180 | 1986-10-24 | ||
JP25418186A JPS63107173A (ja) | 1986-10-24 | 1986-10-24 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880005689A true KR880005689A (ko) | 1988-06-30 |
KR900008154B1 KR900008154B1 (ko) | 1990-11-03 |
Family
ID=26541567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870011772A KR900008154B1 (ko) | 1986-10-24 | 1987-10-23 | 전계효과 트랜지스터 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0264932A1 (ko) |
KR (1) | KR900008154B1 (ko) |
CA (1) | CA1261977A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2873583B2 (ja) * | 1989-05-10 | 1999-03-24 | 富士通株式会社 | 高速半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2012480A (en) * | 1978-01-12 | 1979-07-25 | Plessey Co Ltd | Heterostructure field effect transistors |
FR2492167A1 (fr) * | 1980-10-14 | 1982-04-16 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
JPS5776879A (en) * | 1980-10-31 | 1982-05-14 | Hitachi Ltd | Semiconductor device |
US4583105A (en) * | 1982-12-30 | 1986-04-15 | International Business Machines Corporation | Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage |
JPH0810751B2 (ja) * | 1983-12-23 | 1996-01-31 | 株式会社日立製作所 | 半導体装置 |
-
1987
- 1987-10-21 EP EP87115444A patent/EP0264932A1/en not_active Withdrawn
- 1987-10-23 KR KR1019870011772A patent/KR900008154B1/ko not_active IP Right Cessation
- 1987-10-23 CA CA000550121A patent/CA1261977A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0264932A1 (en) | 1988-04-27 |
CA1261977A (en) | 1989-09-26 |
KR900008154B1 (ko) | 1990-11-03 |
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