KR880002050A - 고내열성 포지티브형 포토레지스트 조성물 - Google Patents

고내열성 포지티브형 포토레지스트 조성물 Download PDF

Info

Publication number
KR880002050A
KR880002050A KR1019870007789A KR870007789A KR880002050A KR 880002050 A KR880002050 A KR 880002050A KR 1019870007789 A KR1019870007789 A KR 1019870007789A KR 870007789 A KR870007789 A KR 870007789A KR 880002050 A KR880002050 A KR 880002050A
Authority
KR
South Korea
Prior art keywords
phenol
weight
compound
photoresist composition
novolak resin
Prior art date
Application number
KR1019870007789A
Other languages
English (en)
Other versions
KR900005849B1 (ko
Inventor
신고 아사우미
히데가쯔 고하라
하쯔유끼 다나가
도시마사 나까야마
Original Assignee
이또오 다께오
도오교오 오오까 고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이또오 다께오, 도오교오 오오까 고오교오 가부시기가이샤 filed Critical 이또오 다께오
Publication of KR880002050A publication Critical patent/KR880002050A/ko
Application granted granted Critical
Publication of KR900005849B1 publication Critical patent/KR900005849B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/005—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein
    • G03C1/06—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein with non-macromolecular additives
    • G03C1/08—Sensitivity-increasing substances
    • G03C1/10—Organic substances
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface

Abstract

내용 없음

Description

고내열성 포지티브형 포토레지스트 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 포지티브형 포토레지스트 조성물의:(A)(a) 페놀, 크레솔류 및 레소르시놀에서 선택된 제1페놀 화합물 중에서 하나 이상, 및 (b) 분자의 헥치환기로서, 알릴옥시, 알릴옥시메틸, 알릴 디메틸실릴, 2-(알릴 디메틸실릴)에톡시, 신나모일(cinnaamoyl), 아크릴로일 및 메타크릴로일기로부터 선택된 에틸렌적으로 불포화된 기를 갖는 제2페놀 화합물 중에서 하나이상으로 이루어진 페놀 화합물의 두 종류로부터 유도된 페놀부분을 함유한 페놀 노볼락 수지 100중량부; 및 (B) 나프토퀴논 디아지도술폰산 에스테르 20∼60중량부로 이루어지는 것을 특징으로 하는 고내열성 포토레지스트 조성물.
  2. 제1항에 있어서, 페놀 노볼락 수지가, 제1페놀 화합물 50중량% 이상과 제2페놀 화합물 50중량% 이하로 이루어진 혼합물로부터 유도된 페놀부분을 함유하는 것을 특징으로 하는 고내열성 포지티브형 포토레지스트 조성물.
  3. 제1항에 있어서, 페놀, 노볼락 수지가, 제1페놀 화합물 60∼90중량%와 제2페놀 화합물 40∼10중량%로 이루어진 혼합물로부터 유도된 페놀부분을 함유하는 것을 특징으로 하는 고내열성 포지티브형 포토레지스트 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870007789A 1986-07-18 1987-07-18 고내열성 포지티브형 포토레지스트 조성물 KR900005849B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61167896A JPH0654390B2 (ja) 1986-07-18 1986-07-18 高耐熱性ポジ型ホトレジスト組成物
JP167896 1986-07-18

Publications (2)

Publication Number Publication Date
KR880002050A true KR880002050A (ko) 1988-04-28
KR900005849B1 KR900005849B1 (ko) 1990-08-13

Family

ID=15858070

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870007789A KR900005849B1 (ko) 1986-07-18 1987-07-18 고내열성 포지티브형 포토레지스트 조성물

Country Status (5)

Country Link
US (1) US4804612A (ko)
JP (1) JPH0654390B2 (ko)
KR (1) KR900005849B1 (ko)
DE (1) DE3723411A1 (ko)
GB (1) GB2192636B (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3812326A1 (de) * 1988-04-14 1989-10-26 Basf Ag Positiv arbeitendes, strahlungsempfindliches gemisch auf basis von saeurespaltbaren und photochemisch saeurebildenden verbindungen und verfahren zur herstellung von reliefmustern und reliefbildern
US5356758A (en) * 1988-12-28 1994-10-18 Texas Instruments Incorporated Method and apparatus for positively patterning a surface-sensitive resist on a semiconductor wafer
DE59010728D1 (de) * 1989-04-24 1997-07-31 Siemens Ag Verfahren zur Erzeugung ätzresistenter Strukturen
IL96551A0 (en) * 1989-12-18 1991-09-16 Rohm & Haas Preparation of high glass transition temperature novolak resins useful in high resolution photoresist compositions
US5391795A (en) * 1994-02-18 1995-02-21 General Electric Company Silylated agents useful for absorbing ultraviolet light
WO1996012216A1 (fr) * 1994-10-13 1996-04-25 Nippon Zeon Co., Ltd. Composition de reserve
GB2350616B (en) * 1999-05-04 2003-07-30 Swan Thomas & Co Ltd Novolak resins used as bonding agents
KR100557543B1 (ko) * 2000-06-30 2006-03-03 주식회사 하이닉스반도체 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
PT2221666E (pt) 2007-11-12 2013-10-31 Hitachi Chemical Co Ltd Composição de resina fotossensível de tipo positivo, método para a produção de um padrão de revestimento fotossensível e dispositivo semicondutor
JP6758575B2 (ja) 2014-02-24 2020-09-23 東京エレクトロン株式会社 感光性化学増幅レジスト化学物質およびプロセスを使用する方法および技術
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
TWI657314B (zh) 2016-05-13 2019-04-21 東京威力科創股份有限公司 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制
TWI662360B (zh) 2016-05-13 2019-06-11 東京威力科創股份有限公司 藉由使用光劑之臨界尺寸控制
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
CN111538211B (zh) * 2020-05-25 2023-04-21 苏州理硕科技有限公司 一种酚醛树脂光刻胶组合物及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289838A (en) * 1972-12-14 1981-09-15 Polychrome Corporation Diazo-unsaturated monomer light sensitive compositions
JPS5723253B2 (ko) * 1974-03-25 1982-05-18
AU3870478A (en) * 1977-08-09 1980-02-14 Somar Mfg High energy radiation cruable resist material
CA1119447A (en) * 1978-09-06 1982-03-09 John P. Vikesland Positive-acting photoresist composition containing a crosslinked urethane resin, a cured epoxy resin and a photosensitizer
DE3071155D1 (en) * 1979-12-22 1985-11-07 Ciba Geigy Ag Compositions containing acrylate and their polymerisation
DE3174017D1 (en) * 1980-12-17 1986-04-10 Konishiroku Photo Ind Photosensitive compositions
US4529682A (en) * 1981-06-22 1985-07-16 Philip A. Hunt Chemical Corporation Positive photoresist composition with cresol-formaldehyde novolak resins
US4435496A (en) * 1982-09-22 1984-03-06 American Hoechst Corporation Photopolymer cleavage imaging system
JPS6095536A (ja) * 1983-10-31 1985-05-28 Asahi Chem Ind Co Ltd 電離放射線感応レジスト
DD239283A1 (de) * 1985-07-08 1986-09-17 Akad Wissenschaften Ddr Verfahren zur herstellung von fotokopierlacken fuer trockenaetzbestaendige positivresistbilder

Also Published As

Publication number Publication date
JPH0654390B2 (ja) 1994-07-20
GB8714145D0 (en) 1987-07-22
JPS6325646A (ja) 1988-02-03
GB2192636B (en) 1989-08-23
GB2192636A (en) 1988-01-20
KR900005849B1 (ko) 1990-08-13
DE3723411A1 (de) 1988-01-28
US4804612A (en) 1989-02-14
DE3723411C2 (ko) 1990-09-13

Similar Documents

Publication Publication Date Title
KR880002050A (ko) 고내열성 포지티브형 포토레지스트 조성물
KR840003811A (ko) 안정하고 기포성인 질좌약 조성물
KR830002824A (ko) 성형용 결합제 조성물의 제조방법
MX169697B (es) Mejoras a composiciones fraguables por radiacion basadas sobre poliesteres insaturados y compuestos teniendo por lo menos dos grupos de vinil eter
KR870006157A (ko) 2-시아노아크릴레이트계 조성물
WO1989004849A1 (en) Thermally stable phenolic resin compositions and their use in light-sensitive compositions
KR900000727A (ko) 내식제 조성물
KR900014516A (ko) 방향족 폴리카보네이트 수지 조성물
KR900002125A (ko) 내식막 조성물
KR920001243A (ko) 포지티브 감 방사선성 레지스트 조성물
KR880001764A (ko) 열가소성 폴리에스테르 수지조성물
KR880000503A (ko) 중합체 조성물 및 이를 사용하여 제조한 섬유용 가호제
KR920702890A (ko) 포지티브 레지스트 조성물
KR920000010A (ko) 방사선-감작 포지티브 레지스트 조성물
KR930022147A (ko) 네가티브형 감광성 내식막 조성물
KR880014051A (ko) 에폭시수지 조성물
KR870010099A (ko) 트리스페놀 및 디사이클로펜타디엔으로부터 제조된 에폭시수지
KR890005195A (ko) 블록화된 산촉매
KR910006779A (ko) 감방사선성 포지티브 레지스트 조성물
KR900018186A (ko) 광저항물에 있어서 다 분기(多 分岐)된 노볼랙(highly branched novolak)의 사용법
KR920001242A (ko) 포지티브 레지스트 조성물
KR910002428A (ko) 트로치 조성물
KR880001744A (ko) 내방사선성 폴리올레핀 조성물
KR860001884A (ko) 세균편모 염색액
KR890003897A (ko) 피복용 수지 조성물

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19940809

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee