KR870011703A - 집적 회로 - Google Patents

집적 회로 Download PDF

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Publication number
KR870011703A
KR870011703A KR870004585A KR870004585A KR870011703A KR 870011703 A KR870011703 A KR 870011703A KR 870004585 A KR870004585 A KR 870004585A KR 870004585 A KR870004585 A KR 870004585A KR 870011703 A KR870011703 A KR 870011703A
Authority
KR
South Korea
Prior art keywords
test
transistor
integrated circuit
channel length
field effect
Prior art date
Application number
KR870004585A
Other languages
English (en)
Other versions
KR900007045B1 (ko
Inventor
안소니 카렐리 죤
알란 페더슨 리챠드
레너드 프리체트 로버트
Original Assignee
엘리 와이스
아메리칸 텔리폰 앤드 텔레그라프 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘리 와이스, 아메리칸 텔리폰 앤드 텔레그라프 캄파니 filed Critical 엘리 와이스
Publication of KR870011703A publication Critical patent/KR870011703A/ko
Application granted granted Critical
Publication of KR900007045B1 publication Critical patent/KR900007045B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

집적 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예의 논리다이어그램.
제2도는 본 발명을 이용한 회로의 개략도.

Claims (3)

  1. 최소한 하나가 주어진 공칭 채널 길이에 동작하도록 설계된 다수의 전계효과 트랜스터를 구비하는 집적회로에 있어서, 제1채널길이(L1)를 가지는 테스트 전계효과트랜지스터(T1) 및 상기 제1채널 길이보다 긴 제2채널 길이(L2)를 가진 기준 전계효과 트랜지스터(T2)와 상기 테스트 트랜지스터 및 기준 트랜지스터의 채널을 통해 전류(I1,I2)를 적절하게 흐르게 하는 수단과 상기 제1 및 제2채널 길이의 상대값에 응답하는 테스트신호를 제공하기 위한 수단을 더 구비하는 것을 특징으로 하는 직접회로.
  2. 제1항에 있어서, 테스트 출력신호를 제공하기 위한 상기 수단은 상기 테스트 트랜지스터와 기준 트랜지스터 사이의 드레인-소스 전압(V1,V2)에서의 차를 증폭하는 상기 집적회로상에 배치되는 차동증폭기를 구비하는 것을 특징으로 하는 집적회로.
  3. 제1항에 있어서, 전류를 적절하게 흐르게하는 상기 수단은 사기 테스트 트랜지스터와 기준 트랜지스터의 드레인 사이에서 각각 접속되며, 상기 집적 회로상에 배치되는 제1 및 제2부하 트랜지스터(T24,T23)및 전원 공급 전압을 적절하게 제공하기 위한 도체를 구비하는 것을 특징으로 하는 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870004585A 1986-05-14 1987-05-11 집적 회로 KR900007045B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US86309486A 1986-05-14 1986-05-14
US?863094 1986-05-14
US863,094 1986-05-14

Publications (2)

Publication Number Publication Date
KR870011703A true KR870011703A (ko) 1987-12-26
KR900007045B1 KR900007045B1 (ko) 1990-09-27

Family

ID=25340235

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870004585A KR900007045B1 (ko) 1986-05-14 1987-05-11 집적 회로

Country Status (7)

Country Link
EP (1) EP0249325B1 (ko)
JP (1) JPS62274635A (ko)
KR (1) KR900007045B1 (ko)
CA (1) CA1252911A (ko)
DE (1) DE3761711D1 (ko)
ES (1) ES2012483B3 (ko)
IE (1) IE59931B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068603A (en) * 1987-10-07 1991-11-26 Xilinx, Inc. Structure and method for producing mask-programmed integrated circuits which are pin compatible substitutes for memory-configured logic arrays
FR2656932B1 (fr) * 1990-01-09 1992-05-07 Sgs Thomson Microelectronics Circuit de mesure du courant dans un transistor mos de puissance.
US5761214A (en) * 1992-10-16 1998-06-02 International Business Machines Corporation Method for testing integrated circuit devices
JPH0794683A (ja) * 1993-09-27 1995-04-07 Nec Corp 自己診断機能を有する半導体集積回路装置
JP3011095B2 (ja) * 1996-03-15 2000-02-21 日本電気株式会社 自己診断機能を有する半導体集積回路装置
JP3214556B2 (ja) 1998-08-25 2001-10-02 日本電気株式会社 集積回路装置、半導体ウェハ、回路検査方法
DE10001129A1 (de) * 2000-01-13 2001-07-26 Infineon Technologies Ag Schaltungsanordnung zur Kapazitätsmessung von Strukturen in einer integrierten Schaltung
JP2005057256A (ja) * 2003-08-04 2005-03-03 Samsung Electronics Co Ltd 漏洩電流を利用した半導体検査装置および漏洩電流補償システム

Also Published As

Publication number Publication date
DE3761711D1 (de) 1990-03-15
IE59931B1 (en) 1994-05-04
EP0249325B1 (en) 1990-02-07
EP0249325A1 (en) 1987-12-16
IE871243L (en) 1987-11-14
JPH0325937B2 (ko) 1991-04-09
KR900007045B1 (ko) 1990-09-27
ES2012483B3 (es) 1990-04-01
JPS62274635A (ja) 1987-11-28
CA1252911A (en) 1989-04-18

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