Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
  • H01L29/92—Capacitors having potential barriers
  • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
  • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
  • G01R31/26—Testing of individual semiconductor devices
  • G01R31/2607—Circuits therefor
  • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• General Physics & Mathematics (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Computer Hardware Design (AREA)
• Tests Of Electronic Circuits (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)
• Semiconductor Integrated Circuits (AREA)
• Testing Of Individual Semiconductor Devices (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=25340235

Family Applications (1)

Country Status (7)

Families Citing this family (8)

• 1987
  • 1987-05-05 DE DE8787303983T patent/DE3761711D1/de not_active Expired - Fee Related
  • 1987-05-05 ES ES87303983T patent/ES2012483B3/es not_active Expired - Lifetime
  • 1987-05-05 EP EP87303983A patent/EP0249325B1/en not_active Expired - Lifetime
  • 1987-05-11 KR KR1019870004585A patent/KR900007045B1/ko not_active IP Right Cessation
  • 1987-05-12 CA CA000536955A patent/CA1252911A/en not_active Expired
  • 1987-05-13 IE IE124387A patent/IE59931B1/en not_active IP Right Cessation
  • 1987-05-14 JP JP62116028A patent/JPS62274635A/ja active Granted

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