KR850004370A - 절연금속 기판의 연속적인 웨브를 제조하기 위한 방법 및 장치 - Google Patents

절연금속 기판의 연속적인 웨브를 제조하기 위한 방법 및 장치 Download PDF

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KR850004370A
KR850004370A KR1019840007583A KR840007583A KR850004370A KR 850004370 A KR850004370 A KR 850004370A KR 1019840007583 A KR1019840007583 A KR 1019840007583A KR 840007583 A KR840007583 A KR 840007583A KR 850004370 A KR850004370 A KR 850004370A
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다께히사 나까야마 (외 3)
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니이노마비또
가네가후찌 가가꾸 고오교 가부시끼 가이샤
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Abstract

내용 없음

Description

절연금속 기판의 연속적인 웨브를 제조하기 위한 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 여러 실시예들의 개요적인 횡단면도.

Claims (29)

  1. 절연금속기판의 연속적인 웨브를 제조하기 위한 방법에 있어서, 플라즈마 CVD 법이나 또는 시퍼터링법에 의해 금속기판의 연속적인 웨브상에 절연층을 증착하는 단계와, 스퍼터링법이나 기상증착법에 의해 절연층상에 후면전극을 증착하는 단계로 구성됨을 특징으로하는 절연 금속기판의 연속적인 웨브를 제조하기 위한 방법.
  2. 제1항에 있어서, 상기 저연층은 Si를 포함하는 비-단결정성물질로 형성됨을 특징으로하는 절연금속 기판의 연속적인 웨브를 제조하기 위한 방법.
  3. 제2항에 있어서, 상기 절연층은 C,O,N,Ge로 구성된 구룹에서 선택된 적어도 하나이상의 원소를 포함함을 특징으로하는 절연 금속기판의 연속적인 웨브를 제조하기 위한 방법.
  4. 제2항에 있어서, 상기 절연층은 원자를 기준으로 10% 이상의 탄소성분을 가짐을 특징으로 하는 절연금속 기판의 연속적인 웨브를 제조하기 위한 방법.
  5. 제1항에 있어서, 상기 절연층은 비결정재로로 형성됨을 특징으로하는 절연 금속기판의 연속적인 웨브를 제조하기 위한 방법.
  6. 제5항에 있어서, 상기 절연층은 Si : H, Si(1-x)Cx: H(이 식중 x는 0.1∼0.9임), Si(1-x)N : H(식중 x는 상기와 같음), Si(1-x)Ox: H(식중 x는 상기와 같음), Si(1-x-y)CxNy: H(식중 x는 상기와 같음 y는 0∼0.9이며, x+y1임)또는 Si(1-x-y)CxOy: H(식중 x와 y는 상기와 같음)인 것을 특징으로하는 절연금속 기판의 연속적인 웨브를 제조하기위한 방법.
  7. 제1항에 있어서, 상기 후면 전극은 알루미늄, 크롬, 니켈, 몰리브덴, 구리, 아연, 은, 주석, 그들의 합금, 그들의 산화금속, 티타늄-은 합금, 니크롬, SUS 또는 ITO로 형성된 단층구조이거나 또는 단층 구조임을 특징으로 하는 절연금속기판의 연속적인 웨브를 제조하기 위한 방법.
  8. 제1항에 있어서, 상기 금속기판의 상기 연속적인 웨브는 로울의 후프재료로 형성됨을 특징으로 하는 절연금속기판의 연속적인 웨브를 제조하기 위한 방법.
  9. 제1항에 있어서, 상기 금속기판은 철, 알루미늄, 니켈, 구리, 아연, 그들의합금, 스텐레스강철, 놋쇠 또는 표면처리금속으로 형성됨을 특징으로하는 절연금속기판의 연속적인 웨브를 제조하기위한 방법.
  10. 제1항에 있어서, 상기 금속기판의 표면이 연마됨을 특징으로하는 절연금속기판의 연속적인 웨브를 제조하기 위한 방법.
  11. 제10항에 있어서, 상기 기판의 표면 거칠음은 R 최대0.5㎛임을 특징으로하는 절연금속기판의 연속적인 웨브를 제조하기 위한 방법.
  12. 제10항에 있어서, 상기 기판의 거칠음은 R 최대0.2㎛임을 특징으로하는 절연 금속기판의 연속적인 웨브를 제조하기 위한 방법.
  13. 제1항에 있어서, 상기 플라즈마 CVD 법이나 또는 스퍼터링 법은 기판이 플라즈마 영역으로부터 ± 3cm내에 설정된 평행판 전극법이나 또는 자계 소자가 전극판에 평행이되도록 배열된 자석을 설치한 전극을 사용한 평행판 전극법임을 특징으로하는 절연금속기판의 연속적인 웨브를 제조하기 위한 방법.
  14. 제13항에 있어서, 상기 절연층의 즈착은 100℃∼400℃의 기판온도에서 수행됨을 특징으로하는 절연금속기판의 연속적인 웨브를 제조하기 위한 방법.
  15. 제1항에 있어서, 상기 후면 전극은 마스크를 사용하여 패턴에 따라 증착됨을 특징으로하는 절연금속기판의 연속적인 웨브를 제조하기 위한 방법.
  16. 제15항에 있어서, 상기 후면 전극의 증착은 실내온도로부터 400℃에 걸쳐있는 기판온도로 수행됨을 특징으로 하는 절연금속기판의 연속적인 웨브를 제조하기 위한 방법.
  17. 절연금속기판의 연속적인 웨브를 연속적으로 제조하기위한 장치에 있어서, 금속기판의 연속적인 웨브를 수용하고 상기 기판을 공급하기위한 공급 체임버와, 절연층이 플라즈마 CVD법이나 또는 스퍼터링법에 의해 상기 공급체임버로 부터 공급된 그속 기판상에 증작되는 플라즈마 체임버와, 후면 전극이 스퍼터링법이나 증착법에 의해 금속기판상에 증착된 절연층상에 형성되는 체임버와, 하부의 전극과 절연기판이 전취되는 전취 체임버로 구성되며, 상기 체임버들은 상술한 순서에 따라 배열됨을 특징으로하는 절연금속 기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  18. 제17항에 있어서, 상기 절연금속기판은 태양 전지소자로 사용됨을 특징으로하는 절연금속기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  19. 제17항에 있어서, 상기 절연금속기판은 인쇄회로판이나 IC판으로 사용됨을 특징으로하는 절연금속기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  20. 제17항에 있어서, 가슬 방출하거나 압력을 조정하기 위한 플라즈마 체임버와 공급 체임버사이에 제공된 제1중간체임버와, 가스를 방출하거나 압력을 조성하기 위한 전취 체임버와 후면 전극을 형성하기 위한 체임버사이에 제공된 제2중간체임버로 구성됨을 특징으로하는 절연금속기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  21. 제17항에 있어서, 상기 제1중간 체임버는 상기 절연금속기판에 관하여 마스크의 위치를 정하고 마스크를 공급하기 위한 수단을 가지며, 상기 제2중간 체임버는 마스크를 전취하기위한 수단을 가져 패턴화된 후면 전극은 하부 전극을 형성하기 위한 체임버의 마스크를 통해 형성됨을 특징으로하는 절연금속기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  22. 제17항에 있어서, 상기 공급체임버는 보호시이트와 보호되는 금속기판표면의 연속적인 웨브를 수용하며, 상기 전취체임버는 후면 전극의 표면을 보호하기 위한 절연금속기판에 보호시이트를 공급하기 위한 수단을 가짐을 특징으로 하는 절연 금속기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  23. 제17항에 있어서, 후면전극을 형성하기 위한 체임버와 전취체임버 사이에 제공된 에칭 체임버를 구비하여, 후면전극이 규정된 패턴으로 에칭됨을 특징으로하는 절연금속 기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  24. 절연금속 기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치에 있어서, 금속기판의 연속적인 웨브를 수용하고 상기 기판을 공급하기 위한 공급 체임버와, 절연층이 플라즈마 CVD법이나 스퍼터링법에 의해 상기 공급체임버로부터 공급된 금속기판상에 증착되는 플라즈마 체임버와, 후면 전극이 스퍼터링법이나 기상증착법에 의해 금속기판상에 증착된 절연층상에 형성되는 체임버와, 상기 후면 전극과 연속적인 절연금속기판을 소정의 규정된 크기로 절단하기위한 절단체임버로 구성되며, 상기 체임버들은 상술한 순서대로 배열됨을 특징으로 하는 절연금속기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  25. 제24항에 있어서, 상기 절연금속기판은 태양 전지소자로 사용됨을 특징으로 하는 절연금속기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  26. 제24항에 있어서, 상기 절연금속기판은 인쇄회로판이나 또는 IC판으로 사용됨을 특징으로하는 절연금속기판의 연속적인 웨브를 연속적으로 제조하기 위한 장치.
  27. 전기 절연층은 플라즈마 CVD법이나 또는 스퍼터링법에 의해 기판상에 증착되며 원자를 기준으로 10% 이상의 탄소 성분을 가지느 비-단결정성 기판을 구성함을 특징으로하는 전기 절연층.
  28. 제27항에 있어서, 상기층의 탄소 성분은 원자를 기준으로 30% 이상임을 특징으로하는 전기 절연층.
  29. 제27항에 있어서, 상기층은 50V/㎛ 이상의 유전성 항봅전압을 가짐을 특징으로하는 전기 절연층.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840007583A 1983-12-01 1984-12-01 절연 금속기판의 연속적인 웨브를 제조하기 위한 방법 및 장치 KR900008504B1 (ko)

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EP0478010A3 (en) 1992-05-13
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ATE78522T1 (de) 1992-08-15
EP0144055A3 (en) 1988-09-21
EP0478010A2 (en) 1992-04-01
EP0144055B1 (en) 1992-07-22
KR900008504B1 (ko) 1990-11-24
US4585537A (en) 1986-04-29
DE3485829D1 (de) 1992-08-27
DE3486402D1 (de) 1995-09-21
CA1267864A (en) 1990-04-17
EP0478010B1 (en) 1995-08-16
CA1267864C (en) 1990-04-17
JPS60119784A (ja) 1985-06-27
EP0144055A2 (en) 1985-06-12
DE3485829T2 (de) 1992-12-10

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