TW230261B - Semiconductor and process of manufacturing thereof - Google Patents

Semiconductor and process of manufacturing thereof

Info

Publication number
TW230261B
TW230261B TW082105392A TW82105392A TW230261B TW 230261 B TW230261 B TW 230261B TW 082105392 A TW082105392 A TW 082105392A TW 82105392 A TW82105392 A TW 82105392A TW 230261 B TW230261 B TW 230261B
Authority
TW
Taiwan
Prior art keywords
layer
wiring
electroconductive
silicon
semiconductor
Prior art date
Application number
TW082105392A
Other languages
Chinese (zh)
Inventor
Shungen Higuchi
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of TW230261B publication Critical patent/TW230261B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The semiconductor of the present invention comprises a semiconductor substrate, an electroconductive layer doped with impurities on the silicon single crystal which constitutes thesemiconductor substrate, a wiring layer which has silicon as the main composition and an insulating layer is formed therebetween on the said semiconductor substrate an insulating film for coating the surface of the region including the electroconductive layer and the wiring layer, a contact hole formed by stripping off a part of the insulating layer and communicating with theelectroconductive layer and the wiring layer, and multiple wiring layers at least connected electrically with at least one of theelectroconductive layer and the wiring layer. The multiple wiring layers at least contacts one of the electroconductive layer andthe wiring layer and comprises an electroconductive silicon film which has polycrystal silicon as its main component, barrier metal sheet which contacts the electroconductive silicon film, and metal wiring film which contacts the said barrier metal sheet. Thesemiconductor has in its tiny contact hole a small contact resistance with wiring portion and electroconductive area, eg. the electroconductive layer formed on the semiconductor substract and the substract wiring which has silicon as its main component.
TW082105392A 1992-07-08 1993-07-06 Semiconductor and process of manufacturing thereof TW230261B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18122192 1992-07-08
JP15619593A JP3413876B2 (en) 1992-07-08 1993-06-02 Semiconductor device

Publications (1)

Publication Number Publication Date
TW230261B true TW230261B (en) 1994-09-11

Family

ID=26484010

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082105392A TW230261B (en) 1992-07-08 1993-07-06 Semiconductor and process of manufacturing thereof

Country Status (4)

Country Link
US (1) US5466971A (en)
JP (1) JP3413876B2 (en)
KR (1) KR100297173B1 (en)
TW (1) TW230261B (en)

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JP3104534B2 (en) * 1994-06-27 2000-10-30 ヤマハ株式会社 Semiconductor device and its manufacturing method.
JPH0897224A (en) * 1994-09-29 1996-04-12 Mitsubishi Electric Corp Bipolar transistor and its manufacture
AU4001395A (en) * 1994-10-11 1996-05-06 Gelest, Inc. Conformal titanium-based films and method for their preparation
US5605862A (en) * 1995-04-05 1997-02-25 International Business Machines Corporation Process for making low-leakage contacts
US5719071A (en) * 1995-12-22 1998-02-17 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad sturcture in an integrated circuit
JP3332773B2 (en) * 1996-03-15 2002-10-07 シャープ株式会社 Active matrix substrate and method of manufacturing active matrix substrate
JPH09266197A (en) * 1996-03-28 1997-10-07 Mitsubishi Electric Corp Semiconductor device and its manufacture
KR100431710B1 (en) * 1996-12-30 2004-08-06 주식회사 하이닉스반도체 Method of forming recess compensated metal line of semiconductor device by restraining hole recess
KR100249170B1 (en) * 1997-04-10 2000-03-15 김영환 Method for fabricating metal line of semiconductor device
US6025264A (en) * 1998-02-09 2000-02-15 United Microelectronics Corp. Fabricating method of a barrier layer
US6410432B1 (en) 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6268288B1 (en) 1999-04-27 2001-07-31 Tokyo Electron Limited Plasma treated thermal CVD of TaN films from tantalum halide precursors
US6265311B1 (en) 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US6410433B1 (en) 1999-04-27 2002-06-25 Tokyo Electron Limited Thermal CVD of TaN films from tantalum halide precursors
US6413860B1 (en) 1999-04-27 2002-07-02 Tokyo Electron Limited PECVD of Ta films from tanatalum halide precursors
US20010051215A1 (en) * 2000-04-13 2001-12-13 Gelest, Inc. Methods for chemical vapor deposition of titanium-silicon-nitrogen films
KR20010096071A (en) * 2000-04-17 2001-11-07 전병민 bulletproof textile
JP3871241B2 (en) * 2000-07-06 2007-01-24 沖電気工業株式会社 Manufacturing method of semiconductor device
KR20030041428A (en) * 2001-11-20 2003-05-27 (주)이젠텍 cloth dryer
US7239013B2 (en) * 2002-07-18 2007-07-03 Hitachi Chemical Co., Ltd. Multilayer wiring board, method for producing the same, semiconductor device and radio electronic device
JP4609982B2 (en) * 2004-03-31 2011-01-12 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
JP4790237B2 (en) * 2004-07-22 2011-10-12 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
EP2497484A3 (en) 2006-02-22 2012-11-07 MannKind Corporation A method for improving the pharmaceutic properties of microparticles comprising diketopiperazine and an active agent
EP3281663B8 (en) 2008-06-13 2022-09-21 MannKind Corporation Breath powered dry powder inhaler for drug delivery
US9364619B2 (en) 2008-06-20 2016-06-14 Mannkind Corporation Interactive apparatus and method for real-time profiling of inhalation efforts
JP5588671B2 (en) 2008-12-25 2014-09-10 ローム株式会社 Manufacturing method of semiconductor device
JP2014241426A (en) * 2008-12-25 2014-12-25 ローム株式会社 Semiconductor device
JP5588670B2 (en) 2008-12-25 2014-09-10 ローム株式会社 Semiconductor device
US8314106B2 (en) 2008-12-29 2012-11-20 Mannkind Corporation Substituted diketopiperazine analogs for use as drug delivery agents
JP2011134910A (en) 2009-12-24 2011-07-07 Rohm Co Ltd Sic field effect transistor
KR20140095483A (en) 2011-10-24 2014-08-01 맨카인드 코포레이션 Methods and compositions for treating pain
DK2872205T3 (en) 2012-07-12 2017-02-27 Mannkind Corp DRY POWDER FORMAL ADMINISTRATION SYSTEM
US8823065B2 (en) * 2012-11-08 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
KR102493127B1 (en) * 2015-10-01 2023-01-31 삼성디스플레이 주식회사 Semiconductor device and method of forming semiconductor device
KR20210154294A (en) * 2020-06-11 2021-12-21 삼성전자주식회사 Semiconductor devices and method of manufacturing the same

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Also Published As

Publication number Publication date
US5466971A (en) 1995-11-14
JPH0677163A (en) 1994-03-18
KR940006248A (en) 1994-03-23
KR100297173B1 (en) 2001-10-24
JP3413876B2 (en) 2003-06-09

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