KR840001545B1 - 산화막의 광화적 저온 증착법 - Google Patents

산화막의 광화적 저온 증착법 Download PDF

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Publication number
KR840001545B1
KR840001545B1 KR1019800004820A KR800004820A KR840001545B1 KR 840001545 B1 KR840001545 B1 KR 840001545B1 KR 1019800004820 A KR1019800004820 A KR 1019800004820A KR 800004820 A KR800004820 A KR 800004820A KR 840001545 B1 KR840001545 B1 KR 840001545B1
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South Korea
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reaction
sio
present
oxygen
radiation
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Korean (ko)
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KR830004445A (ko
Inventor
더블유 피터즈 존
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휴우즈 애어크라프트 캄파니
애라하이가지안
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/20—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Silicon Compounds (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
KR1019800004820A 1979-12-17 1980-12-17 산화막의 광화적 저온 증착법 Expired KR840001545B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10432379A 1979-12-17 1979-12-17
US104.323 1979-12-17
US104,323 1987-10-02

Publications (2)

Publication Number Publication Date
KR830004445A KR830004445A (ko) 1983-07-13
KR840001545B1 true KR840001545B1 (ko) 1984-10-04

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ID=22299878

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KR1019800004820A Expired KR840001545B1 (ko) 1979-12-17 1980-12-17 산화막의 광화적 저온 증착법

Country Status (11)

Country Link
EP (1) EP0030798B1 (enExample)
JP (1) JPS5696704A (enExample)
KR (1) KR840001545B1 (enExample)
CA (1) CA1183102A (enExample)
CH (1) CH648691A5 (enExample)
DE (1) DE3066027D1 (enExample)
GB (1) GB2094280A (enExample)
HK (1) HK65284A (enExample)
IL (1) IL61538A (enExample)
SE (1) SE442409B (enExample)
SG (1) SG33584G (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110028386A (ko) * 2008-07-02 2011-03-17 어플라이드 머티어리얼스, 인코포레이티드 금속 산질화물 ｔｆｔ들을 위한 캡핑 층들

Families Citing this family (35)

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JPS5875828A (ja) * 1981-10-30 1983-05-07 Ushio Inc 被膜形成方法
GB2111037B (en) * 1981-11-23 1984-10-17 Hughes Aircraft Co Preparing substrates for semi-conductors
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition
WO1984000178A1 (en) * 1982-06-22 1984-01-19 Hughes Aircraft Co Low temperature process for depositing epitaxial layers
GB2131611B (en) * 1982-11-17 1986-11-12 Standard Telephones Cables Ltd Dielectric materials
JPH0614552B2 (ja) * 1983-02-02 1994-02-23 富士ゼロックス株式会社 光電変換素子の製造方法
JPS59164653A (ja) * 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd 金属被覆光フアイバ−の製造方法
JPH0685389B2 (ja) * 1983-12-23 1994-10-26 日本電信電話株式会社 半導体装置の保護膜
JPS60162775A (ja) * 1984-01-31 1985-08-24 Nec Corp シリコン酸化膜の製造方法
JPS60216539A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPS60216538A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体基板への不純物拡散方法
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US4590091A (en) * 1984-12-17 1986-05-20 Hughes Aircraft Company Photochemical process for substrate surface preparation
US4632057A (en) * 1985-08-05 1986-12-30 Spectrum Cvd, Inc. CVD plasma reactor
US4632056A (en) * 1985-08-05 1986-12-30 Stitz Robert W CVD temperature control
US4640224A (en) * 1985-08-05 1987-02-03 Spectrum Cvd, Inc. CVD heat source
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
EP0289963A1 (en) * 1987-05-04 1988-11-09 General Signal Corporation Apparatus for, and methods of, obtaining the movement of a substance to a substrate
EP0306069A3 (en) * 1987-08-31 1990-12-27 Koninklijke Philips Electronics N.V. A method of forming an oxide layer on a substrate
JPH01242496A (ja) * 1988-03-24 1989-09-27 Mitsubishi Metal Corp 酸化物系超伝導薄膜の製造方法
US5064517A (en) * 1989-01-18 1991-11-12 Idemitsu Kosan Company Limited Method for the preparation of fine particulate-metal-containing compound
DE3937723A1 (de) * 1989-11-13 1991-05-16 Fraunhofer Ges Forschung Verfahren und vorrichtung zum herstellen einer silikatschicht in einer integrierten schaltung
US5262358A (en) * 1989-11-13 1993-11-16 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for producing a silicate layer in an integrated circuit
JPH04120732A (ja) * 1990-09-12 1992-04-21 Hitachi Ltd 固体素子及びその製造方法
US5670018A (en) * 1995-04-27 1997-09-23 Siemens Aktiengesellschaft Isotropic silicon etch process that is highly selective to tungsten
US5979666A (en) * 1996-06-28 1999-11-09 Douglas; Patrick J. Apparatus for screening particulate material
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
US6943392B2 (en) 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6566147B2 (en) 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
US6838122B2 (en) 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US7011978B2 (en) 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions

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JPS4926747B1 (enExample) * 1970-10-09 1974-07-11
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110028386A (ko) * 2008-07-02 2011-03-17 어플라이드 머티어리얼스, 인코포레이티드 금속 산질화물 ｔｆｔ들을 위한 캡핑 층들

Also Published As

Publication number Publication date
IL61538A0 (en) 1980-12-31
EP0030798B1 (en) 1983-12-28
SE442409B (sv) 1985-12-23
JPS6324923B2 (enExample) 1988-05-23
DE3066027D1 (en) 1984-02-02
IL61538A (en) 1984-03-30
CH648691A5 (en) 1985-03-29
KR830004445A (ko) 1983-07-13
GB2094280A (en) 1982-09-15
EP0030798A1 (en) 1981-06-24
JPS5696704A (en) 1981-08-05
SG33584G (en) 1985-02-08
CA1183102A (en) 1985-02-26
SE8103604L (sv) 1982-12-10
HK65284A (en) 1984-08-31

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