JPS4926747B1 - - Google Patents
Info
- Publication number
- JPS4926747B1 JPS4926747B1 JP45088967A JP8896770A JPS4926747B1 JP S4926747 B1 JPS4926747 B1 JP S4926747B1 JP 45088967 A JP45088967 A JP 45088967A JP 8896770 A JP8896770 A JP 8896770A JP S4926747 B1 JPS4926747 B1 JP S4926747B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H10W74/40—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P32/141—
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- H10P32/171—
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- H10P95/00—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45088967A JPS4926747B1 (enExample) | 1970-10-09 | 1970-10-09 | |
| DE2148431A DE2148431C3 (de) | 1970-10-09 | 1971-09-28 | Verfahren zum Herstellen einer Halbleitervorrichtung |
| US00186970A US3767484A (en) | 1970-10-09 | 1971-10-06 | Method of manufacturing semiconductor devices |
| GB4682971A GB1358715A (en) | 1970-10-09 | 1971-10-07 | Manufacture of semiconductor devices |
| FR7136217A FR2112280B1 (enExample) | 1970-10-09 | 1971-10-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45088967A JPS4926747B1 (enExample) | 1970-10-09 | 1970-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4926747B1 true JPS4926747B1 (enExample) | 1974-07-11 |
Family
ID=13957574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP45088967A Pending JPS4926747B1 (enExample) | 1970-10-09 | 1970-10-09 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3767484A (enExample) |
| JP (1) | JPS4926747B1 (enExample) |
| DE (1) | DE2148431C3 (enExample) |
| FR (1) | FR2112280B1 (enExample) |
| GB (1) | GB1358715A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4006046A (en) * | 1975-04-21 | 1977-02-01 | Trw Inc. | Method for compensating for emitter-push effect in the fabrication of transistors |
| GB2009497B (en) * | 1977-10-26 | 1982-06-30 | Tokyo Shibaura Electric Co | Method for manufacturing a semiconductor device |
| EP0030798B1 (en) * | 1979-12-17 | 1983-12-28 | Hughes Aircraft Company | Low temperature process for depositing oxide layers by photochemical vapor deposition |
| US4263066A (en) * | 1980-06-09 | 1981-04-21 | Varian Associates, Inc. | Process for concurrent formation of base diffusion and p+ profile from single source predeposition |
| JPS58122724A (ja) * | 1982-01-18 | 1983-07-21 | Toshiba Corp | 半導体素子の製造方法 |
| US5126281A (en) * | 1990-09-11 | 1992-06-30 | Hewlett-Packard Company | Diffusion using a solid state source |
| US6333245B1 (en) | 1999-12-21 | 2001-12-25 | International Business Machines Corporation | Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer |
| FR3147601B1 (fr) | 2023-04-04 | 2025-04-11 | Safran Aircraft Engines | Ensemble a calage variable pour soufflante de turbomachine |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL302323A (enExample) * | 1963-02-08 | |||
| US3640782A (en) * | 1967-10-13 | 1972-02-08 | Gen Electric | Diffusion masking in semiconductor preparation |
| US3574010A (en) * | 1968-12-30 | 1971-04-06 | Texas Instruments Inc | Fabrication of metal insulator semiconductor field effect transistors |
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1970
- 1970-10-09 JP JP45088967A patent/JPS4926747B1/ja active Pending
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1971
- 1971-09-28 DE DE2148431A patent/DE2148431C3/de not_active Expired
- 1971-10-06 US US00186970A patent/US3767484A/en not_active Expired - Lifetime
- 1971-10-07 GB GB4682971A patent/GB1358715A/en not_active Expired
- 1971-10-08 FR FR7136217A patent/FR2112280B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2112280B1 (enExample) | 1977-03-18 |
| FR2112280A1 (enExample) | 1972-06-16 |
| DE2148431C3 (de) | 1978-11-23 |
| DE2148431A1 (de) | 1972-04-13 |
| DE2148431B2 (de) | 1976-11-04 |
| US3767484A (en) | 1973-10-23 |
| GB1358715A (en) | 1974-07-03 |