KR840000941A - 다이나믹형 mos 메모리 장치 - Google Patents

다이나믹형 mos 메모리 장치 Download PDF

Info

Publication number
KR840000941A
KR840000941A KR1019820002748A KR820002748A KR840000941A KR 840000941 A KR840000941 A KR 840000941A KR 1019820002748 A KR1019820002748 A KR 1019820002748A KR 820002748 A KR820002748 A KR 820002748A KR 840000941 A KR840000941 A KR 840000941A
Authority
KR
South Korea
Prior art keywords
memory device
mos memory
word line
switch mosfets
line
Prior art date
Application number
KR1019820002748A
Other languages
English (en)
Inventor
데쯔로우 마쯔모도 (외 1)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840000941A publication Critical patent/KR840000941A/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

내용 없음

Description

다이나믹형 MOS 메모리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시를 표시하는 다이나믹형 메모리 시스템의 구분 회로도.
제2도는 본 발명의 실시를 표시하는 다이나믹형 메모리 장치의 구분 회로도.

Claims (3)

  1. 다수개의 게이트라인과 각 게이트라인에 대응하는 곳에 배치되어 있는 다수개의 신정 스위치 MOSFET와 상기한 다수개의 선정스위치 MOSFET들을 제어하기 위한 제어회로와 또, 각 게이트라인과 접지전위 사이에 연결배치되어 있고 각각 자체의 제어단자(制御端子)를 갖는 다수개의 저항체와 상기한 각 선정 스위치 MOSFET의 입력측 전극에 공급하게 되는 타이밍 신호를 받아서 제어단자에 보내지는 제어신호를 만드는 인버터 회로들을 포함하는 다이나믹형 MOS 메모리장치. 여기서 상기의 타이밍 신호는 상기의 제어회로의 한 동작이 끝나는 것과 실제적으로 동기가 되어 공급전원 전압레벨까지 상승하게 된다.
  2. 청구범위 제1항의 다이나믹형 MOS 메모리 장치에서 전술한 게이트라인 즉, 메모리셀을 선정하기 위한 워드라인과 메모리셀을 선정하기 위한 데이터라인.
  3. 전술한 각 워드라인의 대응하는 곳에 배치되어 있어서 들어오는 신호를 검출하여 선정이 되지 않은 워드라인의 임피스던스는 낮게 하고 선정이 된 워드라인 임피던스는 높게 하는 랏치회로가 추가된 청구범위 제2항의 다이나믹형 MOS 메모리 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019820002748A 1981-06-24 1982-06-19 다이나믹형 mos 메모리 장치 KR840000941A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56096638A JPS57212690A (en) 1981-06-24 1981-06-24 Dynamic mos memory device
JP56-96638 1981-06-24

Publications (1)

Publication Number Publication Date
KR840000941A true KR840000941A (ko) 1984-03-26

Family

ID=14170365

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019820002748A KR840000941A (ko) 1981-06-24 1982-06-19 다이나믹형 mos 메모리 장치

Country Status (9)

Country Link
US (1) US4476548A (ko)
JP (1) JPS57212690A (ko)
KR (1) KR840000941A (ko)
DE (1) DE3223599A1 (ko)
FR (1) FR2508688B1 (ko)
GB (1) GB2102645B (ko)
HK (1) HK45386A (ko)
IT (1) IT1151660B (ko)
MY (1) MY8600584A (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750549B2 (ja) * 1984-07-05 1995-05-31 三菱電機株式会社 ダイナミック・ランダム・アクセス・メモリ
NL8500434A (nl) * 1985-02-15 1986-09-01 Philips Nv Geintegreerde geheugenschakeling met blokselektie.
EP0210454B1 (en) * 1985-07-01 1991-01-30 Nec Corporation Memory circuit with improved word line noise preventing circuits
JPS6212997A (ja) * 1985-07-10 1987-01-21 Mitsubishi Electric Corp 半導体記憶装置
JPH0736269B2 (ja) * 1985-08-30 1995-04-19 株式会社日立製作所 半導体記憶装置
US4710902A (en) * 1985-10-04 1987-12-01 Motorola, Inc. Technique restore for a dynamic random access memory
GB2187006B (en) * 1986-02-25 1990-01-10 Sony Corp Random access memory apparatus
US5379261A (en) * 1993-03-26 1995-01-03 United Memories, Inc. Method and circuit for improved timing and noise margin in a DRAM
DE10041688B4 (de) * 2000-08-24 2008-03-27 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen in mehreren Speicherzellenblöcken und Verfahren zum Betrieb eines solchen Speichers
KR100546214B1 (ko) * 2003-11-13 2006-01-24 주식회사 하이닉스반도체 반도체 소자의 데이터 및 데이터 스트로브 드라이버 스트랭쓰 제어 회로

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2366265C3 (de) * 1972-05-16 1981-07-16 Nippon Electric Co., Ltd., Tokyo Pufferschaltung
US3810124A (en) * 1972-06-30 1974-05-07 Ibm Memory accessing system
US3863230A (en) * 1973-07-18 1975-01-28 Intel Corp MOS memory decoder circuit
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
JPS51147224A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor memory
DE2641693C2 (de) * 1976-09-16 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Decodierschaltung mit MOS-Transistoren
JPS545337A (en) * 1977-06-15 1979-01-16 Hitachi Ltd Semiconductor circuit
DE2838004C3 (de) * 1978-08-31 1981-10-29 Siemens AG, 1000 Berlin und 8000 München Decoderschaltung für dynamische Halbleiterspeicher
DE2853523C2 (de) * 1978-12-12 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Dezentrale Erzeugung von Taktsteuersignalen
DE2924526A1 (de) * 1979-06-18 1981-01-08 Siemens Ag Monolithisch integrierter halbleiterspeicher

Also Published As

Publication number Publication date
US4476548A (en) 1984-10-09
GB2102645A (en) 1983-02-02
FR2508688B1 (fr) 1989-03-17
GB2102645B (en) 1985-03-06
HK45386A (en) 1986-06-27
IT8222030A0 (it) 1982-06-23
IT1151660B (it) 1986-12-24
MY8600584A (en) 1986-12-31
FR2508688A1 (fr) 1982-12-31
JPS57212690A (en) 1982-12-27
DE3223599A1 (de) 1983-01-13

Similar Documents

Publication Publication Date Title
KR850700193A (ko) 다 레벨입력전압 수신용 입력버퍼회로
KR920008768A (ko) 반도체기억장치
KR950006850A (ko) 선택기 회로
KR850002637A (ko) 반도체 기억장치
KR850000125A (ko) Mos 기억장치
KR850004855A (ko) 반도체 메모리 장치
KR860000659A (ko) M0s 스태틱형 ram
KR880010423A (ko) 반도체 기억장치
KR880001109A (ko) 집적논리회로
KR880004478A (ko) 반도체 기억장치
KR930020695A (ko) 반도체 기억장치
KR850003611A (ko) 반도체 기억장치의 메모리 셀(cell) 캐패시터 전압인가회로
KR880009376A (ko) 반도체 기억장치
KR880013172A (ko) 반도체 메모리
KR840000941A (ko) 다이나믹형 mos 메모리 장치
KR860008559A (ko) 반도체 기억장치
KR890005992A (ko) 상보신호 출력회로
KR850700197A (ko) 변환기 회로
KR960027258A (ko) 차동 증폭 회로, cmos 인버터, 펄스폭 변조용 복조 회로 및 샘플링 회로
KR970062925A (ko) 외부 장치와 인터페이스하는 저 전력 데이터 처리 시스템 및 그것을 위한 방법
KR870008320A (ko) 상이형 메모리셀로 구성되는 반도체 메모리장치
KR850003045A (ko) 라인 절환 회로 및 그를 사용한 반도체 메모리
KR840005888A (ko) 반도체 기억장치(半導體記憶置裝)
KR880008336A (ko) 반도체 집적회로 장치
KR910020731A (ko) 반도체장치 및 그 번인방법