KR830002067A - 무전해 도금을 하기 위한 썹스트레이트 표면제조법과 그에 의한 생성물 - Google Patents

무전해 도금을 하기 위한 썹스트레이트 표면제조법과 그에 의한 생성물 Download PDF

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KR830002067A
KR830002067A KR1019800000224A KR800000224A KR830002067A KR 830002067 A KR830002067 A KR 830002067A KR 1019800000224 A KR1019800000224 A KR 1019800000224A KR 800000224 A KR800000224 A KR 800000224A KR 830002067 A KR830002067 A KR 830002067A
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metal
electrolytic cell
catalyst
metal surface
treatment step
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KR880001664B1 (ko
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쥬니어 글렌오. 맬러리
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알란 엠. 에이브람스
리차드슨 케미칼 컴페니
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/244Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0347Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0723Electroplating, e.g. finish plating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

내용 없음

Description

무전해 도금을 하기 위한 썹스트레이트 표면제조법과 그에 의한 생성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부도면은 생산공정을 나타내는 계통도임.

Claims (36)

  1. 니켈, 코발트 및 복합제로 구성되어 있는 단체로부터 선택된 용착촉진 금속과 주석, 몰리스테늄 구리와 텅스텐으로 구성되어 있는 단체로부터 선택된 2차 금속을 함유하는 다금속 촉매제로 회로형태를 갖는 배전판을 처리하고, 상기 촉매제가 상기 회로형태에 계속되는 도금을 촉진시키지 못하며, 후에 니켈, 코발트 및 니켈, 혹은 코발트를 함유하는 다합금으로 구성되어 있는 단체로부터 선택된 금속으로 회로형태를 도금하는 것으로 구성되어 있는 인쇄배전판 제조방법.
  2. 상기 처리단계가 상기 회로형태에 우선 촉매제 필름제재를 촉진시키기 위하여 수용성수세제로 상기 촉매제로 처리된 회로판을 수세한 다음에 실시되는 청구범위 1에 의한 방법.
  3. 상기 처리단계가 정교한 회로형태 외부에 배전판을 촉매화시키기 보다는 회로형태를 선택촉매화시키는 시간을 60초이하에서 적어도 한번 수용성수세후에 실시되는 청구범위 1에 의한 방법.
  4. 상기 처리단계가 촉매제에 포함된 금속음이온에 대한 환원제와 함께 상기 촉매제를 함유하는 전해조속으로 배전판을 담그는 청구범위 1에 의한 방법.
  5. 상기 처리 단계가 붕소를 함유하는 환원제와 함께 상기 촉매제를 함유하는 전해조속으로 배전판을 담그는 청구범위 1에 의한 방법.
  6. 상기 처리단계가 알카리성 수용액 전해조속으로 배전판을 담그늘 청구범위 1에 의한 방법.
  7. 상기 처리 단계가 pH 약 5.5-13인 수용성 전해조속에 배전판을 담그는 청구범위 1에 의한 방법.
  8. 상기 처리단계가 온도 약 20-100℃의 수용성 전해조에 배전판을 담그는 청구범위 1에 의한 방법.
  9. 상기 처리단계가 회로형태의 표면을 핵화 시키기에 충분하고 일반적으로 계속적인 도금필름을 용착 시키기에는 불충분한 시간동안 수용성 전해조에 배전판을 담그는 청구범위 1에 의한 방법.
  10. 상기 처리단계가 약 10-약 90초동안 수용성 전해조에 배전판을 담그는 청구범위 1에 의한 방법.
  11. 상기 다금속 촉매제가 니켈과 코발트로 구성되어 있는 단체로부터 선택된 금속 ; 몰리브데늄, 텅스텐, 주석 및 구리를 구성하고 있는 단체로부터 선택된 금속과 붕소 및 인을 구성하고 있는 단체로부터 선택된 요소의 제재에 포함된 청구범위 1에 의한 방법.
  12. 상기 회로형태가 구리를 함유하고 상기 배전판이 회로형태가 안정되어 있는 비전도성판을 포함하는 청구범위 1에 의한 방법.
  13. 상기 처리단계가 전해조 전해부피를 기준으로 해서 용착촉진 금속 약 0.001-0.3mol/ℓ, 2차금속 약 0.001-0.5mol/ℓ와 환원제 약 0.001-0.2mol/ℓ를 갖는 수용성 전해조에 배전판을 담그는 청구범위 1에 의한 방법.
  14. 비촉매성 금속표면을 니켈, 코발트와 혼합물로 구성되어 있는 단체로부터 선택된 용착촉진 금속과 주석, 몰리브데늄, 구리, 텅스텐 및 이들의 혼합물로 구성되어 있는 단체로부터 선택된 2차금속으로 처리하며 상기 처리가 일반적으로 알칼리 조건하에서 이고 상기 비촉매 금속표면을 핵화 시키기에 충분하고 계속적으로 도금하는 필름을 용착시키기에 불충분한 시간 동안 실시되는 비촉매성 금속 표면을 촉매화 시키는 방법.
  15. 상기 처리단계가 상기 금속표면을 우선 촉매제 필름 제제를 상기 금속표면에 부착력을 촉진시키기 위한 수용성 수세제로 수세한 다음 실시되는 청구범위 14에 의한 방법.
  16. 상기 처리단계가 촉매제 내에 포함된 상기 금속의 음이온에 대한 환원제와 함께 상기 촉매제를 함유하는 전해조로 비촉매성 금속표면을 담그는 청구범위 14에 의한 방법.
  17. 상기 처리단계가 비촉매성 금속표면을 pH가 약 5.5-13인 수용성 전해조로 담그고 전해조 온도는 약 20-100℃이며 시간은 비촉매성 금속표면을 핵화시키기에 충분하고 일반적으로 계속적인 도금필름을 용착시키기에 불충분한 청구범위 14에 의한 방법.
  18. 상기 비촉매성 금속표면이 구리를 함유하는 표면인 청구범위 14에 의한 방법.
  19. 촉매제가 니켈, 코발트 및 이들의 혼합물로 구성되어 있는 단체로부터 선택된 용착촉진 금속과 주석, 몰리브데늄, 구리, 텅스트텐 및 이들의 혼합물로 구성된 단체로부터 선택된 2차 금속을 함유하는 다금속제재로구성되어 있고 상기 다금속제재가 일반적으로 계속되는 도금 필름을 용착시키기에 불충분한 조건하에서 상기 비촉매성 표면을 핵화시킬 수 있고 비촉매성 금속표면에 도금을 촉진시키는 촉매제.
  20. 상기 금속이 용해염, 반응해염, 에스테르 혹은 폴리하이드릭 화합물의 에스테르 복합제로서 포함된 청구범위 19에 의한 촉매제.
  21. 2차금속을 함유한 화합물에 대한 용착촉진 금속을 함유한 화합물의 몰분률이 150대 1 내지 약 1대 100인 청구범위 19에 의한 촉매제.
  22. 비촉매성 금속표면이 구리를 함유하는 청구범위 19에 의한 촉매제.
  23. 니켈, 코발트 혹은 니켈이나 코발트를 함유한 다합금으로 도금시키고 상기 전해조가 니켈, 코발트 및 이들이 혼합물로 구성되어 있는 단체로부터 선택된 1차금속과 주석, 몰리브데늄, 구리 및 텅스텐으로 구성되어 있는 단체로부터 선택된 2차금속과 상기물질의 음이온에 대한 환원제를 함유한 다금속 촉매제로 구성되어 있고 상기 전해조가 금속표면에 도금을 촉진하는 금속표면을 촉매화 시키는 전해조.
  24. 상기 환원제가 붕소 수화물, 아민보란과 지급 알킬기로 치환된 아민 보란으로 구성된 단체로부터 선택된 붕소를 함유하는 화합물인 청구범위 23에 의한 전해조.
  25. 상기 전해조가 pH 약 5.5-13이고 온도는 약 20-100℃인 청구범위 23에 의한 전해조.
  26. 상기 전해조가 전해조 전체부피를 기준으로 해서 1차금속 약 0.001-0.3mol/ℓ, 2차금속 약 0.001-0.5mol/ℓ와 환원제 약 0.001-0.2mol/ℓ인 수용성 전해조인 청구범위 23에 의한 전해조.
  27. 상기 전해조가 전해조 안정제, pH조절제, 혼합제, 황화물 이온 조절제 혹은 완충제를 함유하는 청구범위 23에 의한 전해조.
  28. 금속표면이 구리를 함유하는 청구범위 23에 의한 전해조.
  29. 비촉매성 금속표면을 니켈, 코발트 및 이들의 혼합물로 구성되어 있는 단체로부터 선택된 용착증진금속과 주속, 몰리브데늄, 구리, 텅스텐 및 이들의 혼합물로 구성되어 있는 단체로부터 선택된 2차금속을 포함하는 다금속촉매제로 처리하며 상기 처리가 일반적으로 알카리성 조건하에서 실시되고 상기 비촉매성 금속표면에 충분하고 계속적인 도금필름을 용착시키기에 불충분한 시간동안 실시되는 비촉매성 금속표면을 촉매와 시키는 방법에 따라 생성되는 생성물.
  30. 상기 처리단계가 상기 금속표면에 우선 촉매제 필름형성을 촉진시키는 수용성 수세제로 상기 금속표면을 수세한 다음에 실시되는 청구범위 29에 의한 생성물.
  31. 상기 처리단계가 촉매제에 함유된 상기 금속의 음이온에 대한 환원제와 함께 상기 촉매제를 포함한 전해조에 비촉매성 금속표면을 담그는 청구범위 29에 의한 생성물.
  32. 상기 처리단계가 pH 약 5.5-13인 수용성 전해조로 비촉매성 금속표면을 담그며 전해조 온도가 약 20-100℃이며 비촉매성 금속표면을 핵화시키기에 충분하고 계속적인 도금 필름을 용착시키기에 불충분한 시간동안 실시되는 청구범위 29에 의한 생성물.
  33. 상기 비촉매성 금속표면이 구리를 함유하는 청구범위 29에 의한 생성물.
  34. 상기 배촉매성 금속표면이 비전도성 썹스트레이트에 구리를 함유하는 표면이며 처리단계가 구리를 함유하는 표면에 니켈 혹은 코발트를 함유하는 도금을 촉진시켜 동시 비전도성 썹스트레이트에 도금을 촉진시키지 못하는 적어도 한번 수세를 한후에 실시되는 청구범위 29에 의한 생성물.
  35. 상기 구리를 함유한 표면이 인쇄된 배전판에 대한 회로 형태인 청구범위 34에 의한 생성물.
  36. 오버플레이트(overplate) 자체가 구리를 함유하는 표면의 부식저항 혹은 땜납성을 촉진시키기 위하여 금속으로 도금된 청구범위 34에 의한 생성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019800000224A 1979-01-22 1980-01-22 비촉매성 금속기질의 촉매화방법 KR880001664B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5169 1979-01-22
US06/005,169 US4232060A (en) 1979-01-22 1979-01-22 Method of preparing substrate surface for electroless plating and products produced thereby

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Publication Number Publication Date
KR830002067A true KR830002067A (ko) 1983-05-21
KR880001664B1 KR880001664B1 (ko) 1988-09-05

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Families Citing this family (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4632857A (en) * 1974-05-24 1986-12-30 Richardson Chemical Company Electrolessly plated product having a polymetallic catalytic film underlayer
JPS6013078B2 (ja) * 1978-09-05 1985-04-04 日本特殊陶業株式会社 金メツキされた電子部品及びその製法
US4503131A (en) * 1982-01-18 1985-03-05 Richardson Chemical Company Electrical contact materials
DE3380413D1 (en) * 1982-04-27 1989-09-21 Richardson Chemical Co Process for selectively depositing a nickel-boron coating over a metallurgy pattern on a dielectric substrate and products produced thereby
US4717591A (en) * 1983-06-30 1988-01-05 International Business Machines Corporation Prevention of mechanical and electronic failures in heat-treated structures
US4550036A (en) * 1984-10-18 1985-10-29 Hughes Aircraft Company Electroless silver plating process and system
US4568562A (en) * 1984-11-28 1986-02-04 General Dynamics, Pomona Division Method of electroless plating employing plasma treatment
DE3529313A1 (de) * 1985-08-14 1987-02-26 Schering Ag Automatische transport- und behandlungseinrichtung fuer waren, insbesondere leiterplatten
US4997674A (en) * 1987-06-30 1991-03-05 Akzo America Inc. Conductive metallization of substrates via developing agents
US4892776A (en) * 1987-09-02 1990-01-09 Ohmega Electronics, Inc. Circuit board material and electroplating bath for the production thereof
JPH02144987A (ja) * 1988-11-26 1990-06-04 Sumitomo Metal Mining Co Ltd プリント配線板の製造方法
US4954370A (en) * 1988-12-21 1990-09-04 International Business Machines Corporation Electroless plating of nickel on anodized aluminum
US5167992A (en) * 1991-03-11 1992-12-01 Microelectronics And Computer Technology Corporation Selective electroless plating process for metal conductors
US5474798A (en) * 1994-08-26 1995-12-12 Macdermid, Incorporated Method for the manufacture of printed circuit boards
JP3393190B2 (ja) * 1999-02-22 2003-04-07 有限会社関東学院大学表面工学研究所 銅パターンの選択的活性化方法およびこれに用いる活性化剤
US6645550B1 (en) * 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
TW495863B (en) * 2000-08-11 2002-07-21 Chem Trace Inc System and method for cleaning semiconductor fabrication equipment
JP4811543B2 (ja) * 2000-09-08 2011-11-09 学校法人早稲田大学 微細パターンの作製方法
JP2003049280A (ja) * 2001-06-01 2003-02-21 Ebara Corp 無電解めっき液及び半導体装置
US6824666B2 (en) * 2002-01-28 2004-11-30 Applied Materials, Inc. Electroless deposition method over sub-micron apertures
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
US6905622B2 (en) * 2002-04-03 2005-06-14 Applied Materials, Inc. Electroless deposition method
US6899816B2 (en) * 2002-04-03 2005-05-31 Applied Materials, Inc. Electroless deposition method
US6821909B2 (en) * 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US7091132B2 (en) * 2003-07-24 2006-08-15 Applied Materials, Inc. Ultrasonic assisted etch using corrosive liquids
US7827930B2 (en) 2004-01-26 2010-11-09 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7654221B2 (en) 2003-10-06 2010-02-02 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7465358B2 (en) * 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US20070111519A1 (en) * 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
US7064065B2 (en) 2003-10-15 2006-06-20 Applied Materials, Inc. Silver under-layers for electroless cobalt alloys
US7754609B1 (en) 2003-10-28 2010-07-13 Applied Materials, Inc. Cleaning processes for silicon carbide materials
US7205233B2 (en) 2003-11-07 2007-04-17 Applied Materials, Inc. Method for forming CoWRe alloys by electroless deposition
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7651934B2 (en) 2005-03-18 2010-01-26 Applied Materials, Inc. Process for electroless copper deposition
WO2006102180A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Contact metallization methods and processes
WO2006102318A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Electroless deposition process on a contact containing silicon or silicide
KR101432161B1 (ko) * 2006-11-01 2014-08-20 퀀텀 글로벌 테크놀로지스, 엘엘씨 챔버 부품을 세정하기 위한 방법 및 장치
US7867900B2 (en) 2007-09-28 2011-01-11 Applied Materials, Inc. Aluminum contact integration on cobalt silicide junction
US20100055422A1 (en) * 2008-08-28 2010-03-04 Bob Kong Electroless Deposition of Platinum on Copper
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
JP6077318B2 (ja) * 2013-01-29 2017-02-08 Koa株式会社 無電解めっき浴、三酸化モリブデン膜の製造方法、及び化学センサの製造方法
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP6841462B1 (ja) * 2020-07-03 2021-03-10 奥野製薬工業株式会社 無電解めっき用触媒付与液
JP6950051B1 (ja) * 2020-07-22 2021-10-13 上村工業株式会社 無電解Ni−Pめっき用触媒液、および該触媒液を用いた無電解Ni−Pめっき皮膜の形成方法
CN113151811A (zh) * 2021-04-13 2021-07-23 赤壁市聚茂新材料科技有限公司 一种非钯活化镀镍液、镀镍方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226256A (en) * 1963-01-02 1965-12-28 Jr Frederick W Schneble Method of making printed circuits
US3431120A (en) * 1966-06-07 1969-03-04 Allied Res Prod Inc Metal plating by chemical reduction with amineboranes
US3532541A (en) * 1967-06-19 1970-10-06 Ibm Boron containing composite metallic films and plating baths for their electroless deposition
US3832168A (en) * 1971-12-13 1974-08-27 Shipley Co Metal finishing alloy of nickel-copperphosphorus
BE818613A (fr) * 1973-08-15 1975-02-10 Procede chimique de nickelage et de cobaltage
US4002778A (en) * 1973-08-15 1977-01-11 E. I. Du Pont De Nemours And Company Chemical plating process
US3959523A (en) * 1973-12-14 1976-05-25 Macdermid Incorporated Additive printed circuit boards and method of manufacture
DE2409251C3 (de) * 1974-02-22 1979-03-15 Kollmorgen Corp., Hartford, Conn. (V.St.A.) Verfahren zum katalytischen Bekeimen nichtmetallischer Oberflächen für eine nachfolgende, stromlose Metallisierung und Badlösungen zur Durchführung des Verfahrens
US4019910A (en) * 1974-05-24 1977-04-26 The Richardson Chemical Company Electroless nickel polyalloy plating baths
US4136216A (en) * 1975-08-26 1979-01-23 Surface Technology, Inc. Non-precious metal colloidal dispersions for electroless metal deposition
US4122215A (en) * 1976-12-27 1978-10-24 Bell Telephone Laboratories, Incorporated Electroless deposition of nickel on a masked aluminum surface

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CA1139012A (en) 1983-01-04
FR2447130A1 (fr) 1980-08-14
KR880001664B1 (ko) 1988-09-05
HK82884A (en) 1984-11-09
JPS6325518B2 (ko) 1988-05-25
FR2447130B1 (fr) 1988-02-05
DE3002166A1 (de) 1980-07-31
US4232060A (en) 1980-11-04
GB2043115A (en) 1980-10-01
JPS55102297A (en) 1980-08-05
GB2043115B (en) 1983-05-11
DE3002166C2 (ko) 1989-12-07

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