SE7907373L - Forfaringssett for kontinuerlig elektrofri kopparnedfellning under nyttjande av ett hypofosfitreduktionsmedel i nervaro av kobolk- och nickeljoner samt komposition for utovande av forfaringssettet - Google Patents

Forfaringssett for kontinuerlig elektrofri kopparnedfellning under nyttjande av ett hypofosfitreduktionsmedel i nervaro av kobolk- och nickeljoner samt komposition for utovande av forfaringssettet

Info

Publication number
SE7907373L
SE7907373L SE7907373A SE7907373A SE7907373L SE 7907373 L SE7907373 L SE 7907373L SE 7907373 A SE7907373 A SE 7907373A SE 7907373 A SE7907373 A SE 7907373A SE 7907373 L SE7907373 L SE 7907373L
Authority
SE
Sweden
Prior art keywords
copper
solutions
plating
kit
ions
Prior art date
Application number
SE7907373A
Other languages
Unknown language ( )
English (en)
Other versions
SE463820B (sv
Inventor
R Basker
P Kukanskis
J Grunwald
Original Assignee
Macdermid Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25508161&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SE7907373(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Macdermid Inc filed Critical Macdermid Inc
Publication of SE7907373L publication Critical patent/SE7907373L/sv
Publication of SE463820B publication Critical patent/SE463820B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
SE7907373A 1978-11-27 1979-09-05 Foerfaringssaett foer elektrofri, kontinuerlig kopparutfaellning under utnyttjande av ett hypofosfitreduktionsmedel i naervaro av kobolt och/eller nickeljoner SE463820B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/964,128 US4265943A (en) 1978-11-27 1978-11-27 Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions

Publications (2)

Publication Number Publication Date
SE7907373L true SE7907373L (sv) 1980-05-28
SE463820B SE463820B (sv) 1991-01-28

Family

ID=25508161

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7907373A SE463820B (sv) 1978-11-27 1979-09-05 Foerfaringssaett foer elektrofri, kontinuerlig kopparutfaellning under utnyttjande av ett hypofosfitreduktionsmedel i naervaro av kobolt och/eller nickeljoner

Country Status (10)

Country Link
US (1) US4265943A (sv)
JP (1) JPS5576054A (sv)
AU (1) AU535517B2 (sv)
CA (1) CA1117704A (sv)
CH (1) CH649580A5 (sv)
DE (1) DE2947306A1 (sv)
FR (1) FR2442278B2 (sv)
GB (1) GB2037327B (sv)
NL (1) NL188173C (sv)
SE (1) SE463820B (sv)

Families Citing this family (225)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060294B1 (en) * 1980-09-15 1985-12-27 Shipley Company Inc. Electroless alloy plating
JPS58502101A (ja) * 1981-12-21 1983-12-08 マツクデ−ミツド　インコ−ポレ−テツド 無電解銅析出溶液
CH656401A5 (de) * 1983-07-21 1986-06-30 Suisse Horlogerie Rech Lab Verfahren zur stromlosen abscheidung von metallen.
GB2154250B (en) * 1984-02-17 1987-06-03 Omi Int Corp Complexing agent for electroless copper plating
JPS60248882A (ja) * 1984-05-24 1985-12-09 Aisin Seiki Co Ltd 高リン含有ニツケル合金の無電解めつき浴
US4671968A (en) * 1985-04-01 1987-06-09 Macdermid, Incorporated Method for electroless deposition of copper on conductive surfaces and on substrates containing conductive surfaces
US4600609A (en) * 1985-05-03 1986-07-15 Macdermid, Incorporated Method and composition for electroless nickel deposition
FR2590595B1 (fr) * 1985-11-22 1988-02-26 Onera (Off Nat Aerospatiale) Bain a l'hydrazine pour le depot chimique de nickel et/ou de cobalt, et procede de fabrication d'un tel bain.
US4751110A (en) * 1986-07-14 1988-06-14 Shipley Company Inc. Radiation attenuation shielding
JPH0723539B2 (ja) * 1986-11-06 1995-03-15 日本電装株式会社 化学銅めっき液及びそれを用いた銅めっき皮膜の形成方法
US4935267A (en) * 1987-05-08 1990-06-19 Nippondenso Co., Ltd. Process for electrolessly plating copper and plating solution therefor
JP2595319B2 (ja) * 1988-07-20 1997-04-02 日本電装株式会社 化学銅めっき液及びそれを用いた銅めっき皮膜の形成方法
US4938853A (en) * 1989-05-10 1990-07-03 Macdermid, Incorporated Electrolytic method for the dissolution of copper particles formed during electroless copper deposition
US5965211A (en) * 1989-12-29 1999-10-12 Nippondenso Co., Ltd. Electroless copper plating solution and process for formation of copper film
US5158604A (en) * 1991-07-01 1992-10-27 Monsanto Company Viscous electroless plating solutions
JP3219897B2 (ja) * 1993-05-07 2001-10-15 イビデン株式会社 プリント配線板
US6042889A (en) * 1994-02-28 2000-03-28 International Business Machines Corporation Method for electrolessly depositing a metal onto a substrate using mediator ions
EP0743812B1 (en) * 1994-12-01 2008-06-11 Ibiden Co, Ltd. Multilayer printed wiring board and process for producing the same
US5648200A (en) * 1995-03-22 1997-07-15 Macdermid, Incorporated Process for creating circuitry on the surface of a photoimageable dielectric
US5801100A (en) * 1997-03-07 1998-09-01 Industrial Technology Research Institute Electroless copper plating method for forming integrated circuit structures
US6276072B1 (en) * 1997-07-10 2001-08-21 Applied Materials, Inc. Method and apparatus for heating and cooling substrates
US6054173A (en) * 1997-08-22 2000-04-25 Micron Technology, Inc. Copper electroless deposition on a titanium-containing surface
MY144503A (en) * 1998-09-14 2011-09-30 Ibiden Co Ltd Printed circuit board and method for its production
US6180523B1 (en) 1998-10-13 2001-01-30 Industrial Technology Research Institute Copper metallization of USLI by electroless process
US6046107A (en) * 1998-12-17 2000-04-04 Industrial Technology Research Institute Electroless copper employing hypophosphite as a reducing agent
EP1020543A1 (en) * 1999-01-15 2000-07-19 Interuniversitair Micro-Elektronica Centrum Vzw Deposition of copper on an activated surface of a substrate
US7192494B2 (en) 1999-03-05 2007-03-20 Applied Materials, Inc. Method and apparatus for annealing copper films
DE19918833C2 (de) * 1999-04-22 2002-10-31 Atotech Deutschland Gmbh Verfahren zum elektrolytischen Abscheiden einer Metallschicht auf Oberflächen eines elektrisch nichtleitenden Substrats und Anwendung des Verfahrens
JP2001020077A (ja) * 1999-07-07 2001-01-23 Sony Corp 無電解めっき方法及び無電解めっき液
US6258223B1 (en) 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US20040079633A1 (en) * 2000-07-05 2004-04-29 Applied Materials, Inc. Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing
IL138811A0 (en) 2000-10-02 2001-10-31 Grunwald John Method for improving electroless copper deposits using amino borane reducing agent
JP2003013247A (ja) * 2001-04-24 2003-01-15 Murata Mfg Co Ltd 無電解銅めっき浴及び高周波用電子部品
JP3678196B2 (ja) * 2001-12-18 2005-08-03 株式会社村田製作所 チップ型電子部品の製造方法、及びチップ型電子部品
US7138014B2 (en) * 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
US6824666B2 (en) * 2002-01-28 2004-11-30 Applied Materials, Inc. Electroless deposition method over sub-micron apertures
US6905622B2 (en) * 2002-04-03 2005-06-14 Applied Materials, Inc. Electroless deposition method
US6899816B2 (en) * 2002-04-03 2005-05-31 Applied Materials, Inc. Electroless deposition method
US20030207206A1 (en) * 2002-04-22 2003-11-06 General Electric Company Limited play data storage media and method for limiting access to data thereon
US6821909B2 (en) * 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
US7306662B2 (en) * 2006-05-11 2007-12-11 Lam Research Corporation Plating solution for electroless deposition of copper
US7297190B1 (en) * 2006-06-28 2007-11-20 Lam Research Corporation Plating solutions for electroless deposition of copper
US20100098863A1 (en) * 2003-03-12 2010-04-22 University Of Missouri Process for spontaneous deposition from an organic solution
US7827930B2 (en) * 2004-01-26 2010-11-09 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7654221B2 (en) * 2003-10-06 2010-02-02 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7465358B2 (en) * 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US7064065B2 (en) * 2003-10-15 2006-06-20 Applied Materials, Inc. Silver under-layers for electroless cobalt alloys
US20070111519A1 (en) * 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
TW200530427A (en) * 2003-10-17 2005-09-16 Applied Materials Inc Selective self-initiating electroless capping of copper with cobalt-containing alloys
US20050095830A1 (en) * 2003-10-17 2005-05-05 Applied Materials, Inc. Selective self-initiating electroless capping of copper with cobalt-containing alloys
US7205233B2 (en) * 2003-11-07 2007-04-17 Applied Materials, Inc. Method for forming CoWRe alloys by electroless deposition
US20060003570A1 (en) * 2003-12-02 2006-01-05 Arulkumar Shanmugasundram Method and apparatus for electroless capping with vapor drying
US20060033678A1 (en) * 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US20050161338A1 (en) * 2004-01-26 2005-07-28 Applied Materials, Inc. Electroless cobalt alloy deposition process
US20050170650A1 (en) * 2004-01-26 2005-08-04 Hongbin Fang Electroless palladium nitrate activation prior to cobalt-alloy deposition
US20050181226A1 (en) * 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20050253268A1 (en) * 2004-04-22 2005-11-17 Shao-Ta Hsu Method and structure for improving adhesion between intermetal dielectric layer and cap layer
US20060240187A1 (en) * 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
US20060246217A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Electroless deposition process on a silicide contact
WO2006102180A2 (en) * 2005-03-18 2006-09-28 Applied Materials, Inc. Contact metallization methods and processes
US7651934B2 (en) 2005-03-18 2010-01-26 Applied Materials, Inc. Process for electroless copper deposition
JP2006342428A (ja) * 2005-06-10 2006-12-21 Enthone Inc 非導電性の基板に直接金属被覆する方法
US20070071888A1 (en) * 2005-09-21 2007-03-29 Arulkumar Shanmugasundram Method and apparatus for forming device features in an integrated electroless deposition system
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
CN101078111B (zh) * 2006-05-26 2012-01-25 佛山市顺德区汉达精密电子科技有限公司 一种化学镀铜溶液及化学镀方法
US7867900B2 (en) * 2007-09-28 2011-01-11 Applied Materials, Inc. Aluminum contact integration on cobalt silicide junction
US20090238979A1 (en) * 2008-03-21 2009-09-24 William Decesare Method of Applying Catalytic Solution for Use in Electroless Deposition
DE102010012204B4 (de) 2010-03-19 2019-01-24 MacDermid Enthone Inc. (n.d.Ges.d. Staates Delaware) Verbessertes Verfahren zur Direktmetallisierung von nicht leitenden Substraten
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
TWI504787B (zh) * 2011-03-01 2015-10-21 Grand Plastic Technology Co Ltd 高深寬比通孔無電鍍銅沉積方法及配方
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
CN103074647A (zh) * 2012-10-25 2013-05-01 南京大地冷冻食品有限公司 一种光亮强走位无氰碱铜液
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9611550B2 (en) 2012-12-26 2017-04-04 Rohm And Haas Electronic Materials Llc Formaldehyde free electroless copper plating compositions and methods
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
CN103526239A (zh) * 2013-10-08 2014-01-22 昆山纯柏精密五金有限公司 一种铜电镀液以及五金件的镀铜方法
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
TWI707061B (zh) * 2015-11-27 2020-10-11 德商德國艾托特克公司 鈀之電鍍浴組合物及無電電鍍方法
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN111576038A (zh) * 2020-05-09 2020-08-25 盐城工学院 一种基于化学镀铜超疏水油水分离织物的制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3046159A (en) * 1957-12-17 1962-07-24 Hughes Aircraft Co Method of copper plating by chemical reduction
US3093509A (en) * 1959-09-28 1963-06-11 Wein Samuel Process for making copper films
US3352518A (en) * 1965-10-23 1967-11-14 Kidde & Co Walter Personnel ejection system for aircraft
US3615732A (en) * 1968-08-13 1971-10-26 Shipley Co Electroless copper plating
US3615735A (en) * 1968-08-13 1971-10-26 Shipley Co Electroless copper plating
US3615733A (en) * 1968-08-13 1971-10-26 Shipley Co Electroless copper plating
US3620933A (en) * 1969-12-31 1971-11-16 Macdermid Inc Forming plastic parts having surfaces receptive to adherent coatings
US3716462A (en) * 1970-10-05 1973-02-13 D Jensen Copper plating on zinc and its alloys
US3754940A (en) * 1972-09-06 1973-08-28 Crown City Plating Co Electroless plating solutions containing sulfamic acid and salts thereof
JPS5248580B2 (sv) * 1973-07-21 1977-12-10
US3935013A (en) * 1973-11-12 1976-01-27 Eastman Kodak Company Electroless deposition of a copper-nickel alloy on an imagewise pattern of physically developable metal nuclei
US4036651A (en) * 1974-02-26 1977-07-19 Rca Corporation Electroless copper plating bath
DD109669A1 (sv) * 1974-03-15 1974-11-12
US4019910A (en) * 1974-05-24 1977-04-26 The Richardson Chemical Company Electroless nickel polyalloy plating baths
JPS5125432A (ja) * 1974-08-28 1976-03-02 Mitsubishi Gas Chemical Co Mudenkaidometsukihoho
US4048354A (en) * 1975-10-23 1977-09-13 Nathan Feldstein Method of preparation and use of novel electroless plating catalysts
US4138267A (en) * 1976-12-28 1979-02-06 Okuno Chemical Industry Company, Limited Compositions for chemical copper plating
US4209331A (en) * 1978-05-25 1980-06-24 Macdermid Incorporated Electroless copper composition solution using a hypophosphite reducing agent

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GB2037327A (en) 1980-07-09
NL188173B (nl) 1991-11-18
JPS5576054A (en) 1980-06-07
CH649580A5 (de) 1985-05-31
FR2442278A2 (fr) 1980-06-20
AU5227779A (en) 1980-05-29
SE463820B (sv) 1991-01-28
DE2947306A1 (de) 1980-06-04
NL188173C (nl) 1992-04-16
DE2947306C2 (sv) 1988-01-21
AU535517B2 (en) 1984-03-29
NL7907555A (nl) 1980-05-29
FR2442278B2 (fr) 1985-09-20
GB2037327B (en) 1983-11-09
JPS6344822B2 (sv) 1988-09-07
CA1117704A (en) 1982-02-09
US4265943A (en) 1981-05-05

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