KR20260029292A - GaN 에피택셜 막의 제조방법 및 반도체 디바이스의 제조방법 - Google Patents
GaN 에피택셜 막의 제조방법 및 반도체 디바이스의 제조방법Info
- Publication number
- KR20260029292A KR20260029292A KR1020257043103A KR20257043103A KR20260029292A KR 20260029292 A KR20260029292 A KR 20260029292A KR 1020257043103 A KR1020257043103 A KR 1020257043103A KR 20257043103 A KR20257043103 A KR 20257043103A KR 20260029292 A KR20260029292 A KR 20260029292A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- gan
- substrate
- epitaxial film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3416—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3216—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023109212A JP2025007662A (ja) | 2023-07-03 | 2023-07-03 | ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法 |
| JPJP-P-2023-109212 | 2023-07-03 | ||
| PCT/JP2024/021963 WO2025009374A1 (ja) | 2023-07-03 | 2024-06-18 | ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20260029292A true KR20260029292A (ko) | 2026-03-04 |
Family
ID=94172055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257043103A Pending KR20260029292A (ko) | 2023-07-03 | 2024-06-18 | GaN 에피택셜 막의 제조방법 및 반도체 디바이스의 제조방법 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4741542A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2025007662A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20260029292A (cg-RX-API-DMAC7.html) |
| CN (1) | CN121399308A (cg-RX-API-DMAC7.html) |
| TW (1) | TW202517849A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2025009374A1 (cg-RX-API-DMAC7.html) |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜 |
| TWI519686B (zh) | 2005-12-15 | 2016-02-01 | 聖戈班晶體探測器公司 | 低差排密度氮化鎵（ＧａＮ）之生長方法 |
| JP6019928B2 (ja) | 2011-10-07 | 2016-11-02 | 住友電気工業株式会社 | ＧａＮ系膜の製造方法およびそれに用いられる複合基板 |
| JP6503049B2 (ja) | 2013-06-27 | 2019-04-17 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法 |
| JP6270536B2 (ja) | 2013-06-27 | 2018-01-31 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法 |
| TWI793755B (zh) | 2016-06-14 | 2023-02-21 | 美商克若密斯股份有限公司 | 用於功率及rf應用的工程基板結構 |
| US10355120B2 (en) | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
| US10622468B2 (en) * | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
| JP6595678B1 (ja) | 2018-08-29 | 2019-10-23 | 株式会社サイオクス | 窒化物半導体基板、窒化物半導体基板の製造方法および積層構造体 |
| JP6595677B1 (ja) | 2018-08-29 | 2019-10-23 | 株式会社サイオクス | 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体 |
| JP6595676B1 (ja) | 2018-08-29 | 2019-10-23 | 株式会社サイオクス | 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体 |
| JP6595731B1 (ja) | 2018-10-26 | 2019-10-23 | 株式会社サイオクス | 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体 |
| JP2020033254A (ja) | 2019-09-20 | 2020-03-05 | 株式会社サイオクス | 窒化物半導体基板 |
| JP7166998B2 (ja) | 2019-09-20 | 2022-11-08 | 株式会社サイオクス | 窒化物半導体基板 |
| JP7319227B2 (ja) | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法 |
| JP7618401B2 (ja) * | 2020-07-01 | 2025-01-21 | 信越化学工業株式会社 | 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
| JP7368336B2 (ja) * | 2020-09-30 | 2023-10-24 | 信越半導体株式会社 | 紫外線発光素子用金属貼り合わせ基板の製造方法、及び紫外線発光素子の製造方法 |
| WO2023027045A1 (ja) * | 2021-08-25 | 2023-03-02 | 京セラ株式会社 | 半導体素子の製造方法、半導体素子及び半導体装置 |
-
2023
- 2023-07-03 JP JP2023109212A patent/JP2025007662A/ja active Pending
-
2024
- 2024-06-18 WO PCT/JP2024/021963 patent/WO2025009374A1/ja not_active Ceased
- 2024-06-18 CN CN202480042967.8A patent/CN121399308A/zh active Pending
- 2024-06-18 KR KR1020257043103A patent/KR20260029292A/ko active Pending
- 2024-06-18 EP EP24835888.9A patent/EP4741542A1/en active Pending
- 2024-06-19 TW TW113122617A patent/TW202517849A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025009374A1 (ja) | 2025-01-09 |
| JP2025007662A (ja) | 2025-01-17 |
| EP4741542A1 (en) | 2026-05-13 |
| TW202517849A (zh) | 2025-05-01 |
| CN121399308A (zh) | 2026-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI476947B (zh) | An epitaxial wafer, a gallium nitride-based semiconductor device, a gallium nitride-based semiconductor device, and a gallium oxide wafer | |
| US10269903B2 (en) | Semiconductor structure having graded transition bodies | |
| CN103137446B (zh) | 硅衬底上氮化镓生长方法 | |
| JP5117588B2 (ja) | 窒化物半導体結晶層の製造方法 | |
| JP5441297B2 (ja) | Ｉｉｉ−ｖ族発光デバイス | |
| JP5627649B2 (ja) | 窒化物半導体結晶層の製造方法 | |
| KR101933230B1 (ko) | 반도체 소자, ｈｅｍｔ 소자, 및 반도체 소자의 제조 방법 | |
| JP7069584B2 (ja) | 基板生産物の製造方法 | |
| JP7052503B2 (ja) | トランジスタの製造方法 | |
| JP2009507362A (ja) | ネイティブ基板を含む高電子移動度電子デバイス構造およびそれらを製造するための方法 | |
| JP2016058693A (ja) | 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法 | |
| CN113539786B (zh) | 硅基氮化镓外延结构及其制备方法 | |
| JP5412093B2 (ja) | 半導体ウェハ製造方法及び半導体装置製造方法 | |
| US9048091B2 (en) | Method and substrate for thick III-N epitaxy | |
| CN114242815A (zh) | N极性GaN/AlGaN异质结外延结构及其制备方法 | |
| CN102222690B (zh) | 氮化物系半导体晶片以及氮化物系半导体装置 | |
| JP5460751B2 (ja) | 半導体装置 | |
| JP2022131086A (ja) | 窒化物半導体基板およびその製造方法 | |
| US8779437B2 (en) | Wafer, crystal growth method, and semiconductor device | |
| TW202517849A (zh) | ＧａＮ磊晶生長膜的製造方法及半導體元件的製造方法 | |
| US9680055B2 (en) | Hetero-substrate, nitride-based semiconductor light emitting device, and method for manufacturing the same | |
| JP7859491B2 (ja) | 半導体積層構造およびその作製方法、ならびに半導体装置の製造方法 | |
| CN121398093A (zh) | Ⅲ族氮化物外延结构及其制备方法、hemt器件及其制备方法 | |
| KR100839224B1 (ko) | ＧａＮ 후막의 제조방법 | |
| CN121442750A (zh) | 外延结构及其制备方法、hemt器件及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13 | Application amended |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |