CN121399308A - GaN外延膜的制造方法及半导体器件的制造方法 - Google Patents
GaN外延膜的制造方法及半导体器件的制造方法Info
- Publication number
- CN121399308A CN121399308A CN202480042967.8A CN202480042967A CN121399308A CN 121399308 A CN121399308 A CN 121399308A CN 202480042967 A CN202480042967 A CN 202480042967A CN 121399308 A CN121399308 A CN 121399308A
- Authority
- CN
- China
- Prior art keywords
- layer
- gan
- substrate
- epitaxial film
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3416—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3216—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023109212A JP2025007662A (ja) | 2023-07-03 | 2023-07-03 | ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法 |
| JP2023-109212 | 2023-07-03 | ||
| PCT/JP2024/021963 WO2025009374A1 (ja) | 2023-07-03 | 2024-06-18 | ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN121399308A true CN121399308A (zh) | 2026-01-23 |
Family
ID=94172055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480042967.8A Pending CN121399308A (zh) | 2023-07-03 | 2024-06-18 | GaN外延膜的制造方法及半导体器件的制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4741542A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2025007662A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20260029292A (cg-RX-API-DMAC7.html) |
| CN (1) | CN121399308A (cg-RX-API-DMAC7.html) |
| TW (1) | TW202517849A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2025009374A1 (cg-RX-API-DMAC7.html) |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜 |
| TWI519686B (zh) | 2005-12-15 | 2016-02-01 | 聖戈班晶體探測器公司 | 低差排密度氮化鎵（ＧａＮ）之生長方法 |
| JP6019928B2 (ja) | 2011-10-07 | 2016-11-02 | 住友電気工業株式会社 | ＧａＮ系膜の製造方法およびそれに用いられる複合基板 |
| JP6503049B2 (ja) | 2013-06-27 | 2019-04-17 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法 |
| JP6270536B2 (ja) | 2013-06-27 | 2018-01-31 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法 |
| TWI793755B (zh) | 2016-06-14 | 2023-02-21 | 美商克若密斯股份有限公司 | 用於功率及rf應用的工程基板結構 |
| US10355120B2 (en) | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
| US10622468B2 (en) * | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
| JP6595678B1 (ja) | 2018-08-29 | 2019-10-23 | 株式会社サイオクス | 窒化物半導体基板、窒化物半導体基板の製造方法および積層構造体 |
| JP6595677B1 (ja) | 2018-08-29 | 2019-10-23 | 株式会社サイオクス | 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体 |
| JP6595676B1 (ja) | 2018-08-29 | 2019-10-23 | 株式会社サイオクス | 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体 |
| JP6595731B1 (ja) | 2018-10-26 | 2019-10-23 | 株式会社サイオクス | 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体 |
| JP2020033254A (ja) | 2019-09-20 | 2020-03-05 | 株式会社サイオクス | 窒化物半導体基板 |
| JP7166998B2 (ja) | 2019-09-20 | 2022-11-08 | 株式会社サイオクス | 窒化物半導体基板 |
| JP7319227B2 (ja) | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法 |
| JP7618401B2 (ja) * | 2020-07-01 | 2025-01-21 | 信越化学工業株式会社 | 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
| JP7368336B2 (ja) * | 2020-09-30 | 2023-10-24 | 信越半導体株式会社 | 紫外線発光素子用金属貼り合わせ基板の製造方法、及び紫外線発光素子の製造方法 |
| WO2023027045A1 (ja) * | 2021-08-25 | 2023-03-02 | 京セラ株式会社 | 半導体素子の製造方法、半導体素子及び半導体装置 |
-
2023
- 2023-07-03 JP JP2023109212A patent/JP2025007662A/ja active Pending
-
2024
- 2024-06-18 WO PCT/JP2024/021963 patent/WO2025009374A1/ja not_active Ceased
- 2024-06-18 CN CN202480042967.8A patent/CN121399308A/zh active Pending
- 2024-06-18 KR KR1020257043103A patent/KR20260029292A/ko active Pending
- 2024-06-18 EP EP24835888.9A patent/EP4741542A1/en active Pending
- 2024-06-19 TW TW113122617A patent/TW202517849A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025009374A1 (ja) | 2025-01-09 |
| JP2025007662A (ja) | 2025-01-17 |
| KR20260029292A (ko) | 2026-03-04 |
| EP4741542A1 (en) | 2026-05-13 |
| TW202517849A (zh) | 2025-05-01 |
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