TW202517849A - ＧａＮ磊晶生長膜的製造方法及半導體元件的製造方法 - Google Patents

ＧａＮ磊晶生長膜的製造方法及半導體元件的製造方法 Download PDF

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TW202517849A
TW202517849A TW113122617A TW113122617A TW202517849A TW 202517849 A TW202517849 A TW 202517849A TW 113122617 A TW113122617 A TW 113122617A TW 113122617 A TW113122617 A TW 113122617A TW 202517849 A TW202517849 A TW 202517849A
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Taiwan
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layer
gan
substrate
epitaxial film
manufacturing
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TW113122617A
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English (en)
Chinese (zh)
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萩本和德
山田雅人
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日商信越半導體股份有限公司
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Publication of TW202517849A publication Critical patent/TW202517849A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW113122617A 2023-07-03 2024-06-19 ＧａＮ磊晶生長膜的製造方法及半導體元件的製造方法 TW202517849A (zh)

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JP2023109212A JP2025007662A (ja) 2023-07-03 2023-07-03 ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法
JP2023-109212 2023-07-03

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TW202517849A true TW202517849A (zh) 2025-05-01

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EP (1) EP4741542A1 (cg-RX-API-DMAC7.html)
JP (1) JP2025007662A (cg-RX-API-DMAC7.html)
KR (1) KR20260029292A (cg-RX-API-DMAC7.html)
CN (1) CN121399308A (cg-RX-API-DMAC7.html)
TW (1) TW202517849A (cg-RX-API-DMAC7.html)
WO (1) WO2025009374A1 (cg-RX-API-DMAC7.html)

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JP3139445B2 (ja) * 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
TWI519686B (zh) 2005-12-15 2016-02-01 聖戈班晶體探測器公司 低差排密度氮化鎵（ＧａＮ）之生長方法
JP6019928B2 (ja) 2011-10-07 2016-11-02 住友電気工業株式会社 ＧａＮ系膜の製造方法およびそれに用いられる複合基板
JP6503049B2 (ja) 2013-06-27 2019-04-17 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法
JP6270536B2 (ja) 2013-06-27 2018-01-31 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法
TWI793755B (zh) 2016-06-14 2023-02-21 美商克若密斯股份有限公司 用於功率及rf應用的工程基板結構
US10355120B2 (en) 2017-01-18 2019-07-16 QROMIS, Inc. Gallium nitride epitaxial structures for power devices
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
JP6595678B1 (ja) 2018-08-29 2019-10-23 株式会社サイオクス 窒化物半導体基板、窒化物半導体基板の製造方法および積層構造体
JP6595677B1 (ja) 2018-08-29 2019-10-23 株式会社サイオクス 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体
JP6595676B1 (ja) 2018-08-29 2019-10-23 株式会社サイオクス 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体
JP6595731B1 (ja) 2018-10-26 2019-10-23 株式会社サイオクス 窒化物半導体基板の製造方法、窒化物半導体基板および積層構造体
JP2020033254A (ja) 2019-09-20 2020-03-05 株式会社サイオクス 窒化物半導体基板
JP7166998B2 (ja) 2019-09-20 2022-11-08 株式会社サイオクス 窒化物半導体基板
JP7319227B2 (ja) 2020-05-11 2023-08-01 信越化学工業株式会社 Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法
JP7618401B2 (ja) * 2020-07-01 2025-01-21 信越化学工業株式会社 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
JP7368336B2 (ja) * 2020-09-30 2023-10-24 信越半導体株式会社 紫外線発光素子用金属貼り合わせ基板の製造方法、及び紫外線発光素子の製造方法
WO2023027045A1 (ja) * 2021-08-25 2023-03-02 京セラ株式会社 半導体素子の製造方法、半導体素子及び半導体装置

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WO2025009374A1 (ja) 2025-01-09
JP2025007662A (ja) 2025-01-17
KR20260029292A (ko) 2026-03-04
EP4741542A1 (en) 2026-05-13
CN121399308A (zh) 2026-01-23

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