KR20220131926A - 실리카 입자, 실리카 졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents

실리카 입자, 실리카 졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR20220131926A
KR20220131926A KR1020227026002A KR20227026002A KR20220131926A KR 20220131926 A KR20220131926 A KR 20220131926A KR 1020227026002 A KR1020227026002 A KR 1020227026002A KR 20227026002 A KR20227026002 A KR 20227026002A KR 20220131926 A KR20220131926 A KR 20220131926A
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South Korea
Prior art keywords
silica
silica particles
mass
polishing
preferable
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Pending
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KR1020227026002A
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English (en)
Korean (ko)
Inventor
나오코 스미타니
츠토무 요네모리
에이지 데지마
야스히로 가와세
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미쯔비시 케미컬 주식회사
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Publication of KR20220131926A publication Critical patent/KR20220131926A/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/145—Preparation of hydroorganosols, organosols or dispersions in an organic medium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020227026002A 2020-01-28 2021-01-25 실리카 입자, 실리카 졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법 Pending KR20220131926A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020011471 2020-01-28
JPJP-P-2020-011471 2020-01-28
PCT/JP2021/002435 WO2021153502A1 (ja) 2020-01-28 2021-01-25 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20220131926A true KR20220131926A (ko) 2022-09-29

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KR1020227026002A Pending KR20220131926A (ko) 2020-01-28 2021-01-25 실리카 입자, 실리카 졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법

Country Status (7)

Country Link
US (1) US20220363554A1 (https=)
EP (1) EP4098615A4 (https=)
JP (2) JPWO2021153502A1 (https=)
KR (1) KR20220131926A (https=)
CN (2) CN118833827A (https=)
TW (1) TWI895337B (https=)
WO (1) WO2021153502A1 (https=)

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CN118974198A (zh) * 2022-03-23 2024-11-15 福吉米株式会社 研磨用组合物及使用其的研磨方法
CN119403760A (zh) * 2022-06-20 2025-02-07 三菱化学株式会社 二氧化硅粒子及其制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法以及半导体器件的制造方法
JP7582551B2 (ja) * 2022-06-20 2024-11-13 三菱ケミカル株式会社 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JPWO2024122583A1 (https=) * 2022-12-08 2024-06-13

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JPH04187512A (ja) 1990-11-21 1992-07-06 Catalysts & Chem Ind Co Ltd シリカゾルとその製法
JPH1160232A (ja) 1997-08-11 1999-03-02 Mamoru Iso 繭型コロイダルシリカの製造方法
WO2013073025A1 (ja) 2011-11-16 2013-05-23 日産化学工業株式会社 半導体ウェーハ用研磨液組成物

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US5425930A (en) * 1993-09-17 1995-06-20 Alliedsignal Inc. Process for forming large silica spheres by low temperature nucleation
JPH08183610A (ja) * 1994-12-27 1996-07-16 Mitsubishi Chem Corp 着色球状シリカの製造法
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JPS61209910A (ja) 1985-03-15 1986-09-18 Tama Kagaku Kogyo Kk ポリツシング用コロイダルシリカの製造方法
JPH04187512A (ja) 1990-11-21 1992-07-06 Catalysts & Chem Ind Co Ltd シリカゾルとその製法
JPH1160232A (ja) 1997-08-11 1999-03-02 Mamoru Iso 繭型コロイダルシリカの製造方法
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US20220363554A1 (en) 2022-11-17
TWI895337B (zh) 2025-09-01
CN115023408B (zh) 2024-08-20
CN115023408A (zh) 2022-09-06
EP4098615A1 (en) 2022-12-07
TW202134179A (zh) 2021-09-16
JP2025036640A (ja) 2025-03-14
JPWO2021153502A1 (https=) 2021-08-05
EP4098615A4 (en) 2023-08-02
WO2021153502A1 (ja) 2021-08-05
CN118833827A (zh) 2024-10-25

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