JPWO2024122583A1 - - Google Patents

Info

Publication number
JPWO2024122583A1
JPWO2024122583A1 JP2024562973A JP2024562973A JPWO2024122583A1 JP WO2024122583 A1 JPWO2024122583 A1 JP WO2024122583A1 JP 2024562973 A JP2024562973 A JP 2024562973A JP 2024562973 A JP2024562973 A JP 2024562973A JP WO2024122583 A1 JPWO2024122583 A1 JP WO2024122583A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024562973A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024122583A1 publication Critical patent/JPWO2024122583A1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141Preparation of hydrosols or aqueous dispersions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/129Preparing bulk and homogeneous wafers by polishing
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/02Amorphous compounds
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2024562973A 2022-12-08 2023-12-06 Pending JPWO2024122583A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022196462 2022-12-08
PCT/JP2023/043677 WO2024122583A1 (ja) 2022-12-08 2023-12-06 シリカ粒子、シリカ粒子の製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
JPWO2024122583A1 true JPWO2024122583A1 (https=) 2024-06-13

Family

ID=91379020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024562973A Pending JPWO2024122583A1 (https=) 2022-12-08 2023-12-06

Country Status (7)

Country Link
US (1) US20250297136A1 (https=)
EP (1) EP4631913A4 (https=)
JP (1) JPWO2024122583A1 (https=)
KR (1) KR20250121312A (https=)
CN (1) CN120265574A (https=)
TW (1) TW202436223A (https=)
WO (1) WO2024122583A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3040310B2 (ja) * 1994-07-04 2000-05-15 信越化学工業株式会社 合成石英ガラスの製造方法
JPH08208214A (ja) * 1995-02-03 1996-08-13 Mitsubishi Chem Corp シリカゲル及びその製造法、並びに合成石英ガラス粉の製造法
JPH08325272A (ja) 1995-05-26 1996-12-10 Mitsubishi Chem Corp 高純度テトラアルコキシシラン及びその製造方法
JP5270344B2 (ja) 2006-07-31 2013-08-21 扶桑化学工業株式会社 シリカゾルおよびその製造方法
JP5348400B2 (ja) 2008-09-05 2013-11-20 Jsr株式会社 シリカ粒子分散液およびその製造方法
JP5905767B2 (ja) * 2012-04-17 2016-04-20 多摩化学工業株式会社 中性コロイダルシリカ分散液の分散安定化方法及び分散安定性に優れた中性コロイダルシリカ分散液
US11499070B2 (en) * 2015-01-19 2022-11-15 Fujimi Incorporated Modified colloidal silica and method for producing the same, and polishing agent using the same
TWI757349B (zh) 2016-11-07 2022-03-11 日商日揮觸媒化成股份有限公司 研磨用氧化矽系粒子及研磨材
TWI762528B (zh) * 2016-12-02 2022-05-01 日商日揮觸媒化成股份有限公司 研磨用氧化矽系粒子及研磨材
JPWO2021153502A1 (https=) * 2020-01-28 2021-08-05
JP2022063814A (ja) * 2020-10-12 2022-04-22 合資会社 ナベショー 合成シリカ粉の製造方法
JP2023004284A (ja) * 2021-06-25 2023-01-17 三菱ケミカル株式会社 シリカ粒子の製造方法、シリカゾルの製造方法及び研磨方法

Also Published As

Publication number Publication date
CN120265574A (zh) 2025-07-04
EP4631913A4 (en) 2026-03-04
WO2024122583A1 (ja) 2024-06-13
KR20250121312A (ko) 2025-08-12
TW202436223A (zh) 2024-09-16
EP4631913A1 (en) 2025-10-15
US20250297136A1 (en) 2025-09-25

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