CN120265574A - 二氧化硅粒子、二氧化硅粒子的制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法及半导体器件的制造方法 - Google Patents

二氧化硅粒子、二氧化硅粒子的制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法及半导体器件的制造方法 Download PDF

Info

Publication number
CN120265574A
CN120265574A CN202380083781.2A CN202380083781A CN120265574A CN 120265574 A CN120265574 A CN 120265574A CN 202380083781 A CN202380083781 A CN 202380083781A CN 120265574 A CN120265574 A CN 120265574A
Authority
CN
China
Prior art keywords
silica particles
mass
polished
content
ppb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380083781.2A
Other languages
English (en)
Chinese (zh)
Inventor
加藤友宽
泽井毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of CN120265574A publication Critical patent/CN120265574A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN202380083781.2A 2022-12-08 2023-12-06 二氧化硅粒子、二氧化硅粒子的制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法及半导体器件的制造方法 Pending CN120265574A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-196462 2022-12-08
JP2022196462 2022-12-08
PCT/JP2023/043677 WO2024122583A1 (ja) 2022-12-08 2023-12-06 シリカ粒子、シリカ粒子の製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
CN120265574A true CN120265574A (zh) 2025-07-04

Family

ID=91379020

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380083781.2A Pending CN120265574A (zh) 2022-12-08 2023-12-06 二氧化硅粒子、二氧化硅粒子的制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法及半导体器件的制造方法

Country Status (7)

Country Link
US (1) US20250297136A1 (https=)
EP (1) EP4631913A4 (https=)
JP (1) JPWO2024122583A1 (https=)
KR (1) KR20250121312A (https=)
CN (1) CN120265574A (https=)
TW (1) TW202436223A (https=)
WO (1) WO2024122583A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3040310B2 (ja) * 1994-07-04 2000-05-15 信越化学工業株式会社 合成石英ガラスの製造方法
JPH08208214A (ja) * 1995-02-03 1996-08-13 Mitsubishi Chem Corp シリカゲル及びその製造法、並びに合成石英ガラス粉の製造法
JPH08325272A (ja) 1995-05-26 1996-12-10 Mitsubishi Chem Corp 高純度テトラアルコキシシラン及びその製造方法
JP5270344B2 (ja) 2006-07-31 2013-08-21 扶桑化学工業株式会社 シリカゾルおよびその製造方法
JP5348400B2 (ja) 2008-09-05 2013-11-20 Ｊｓｒ株式会社 シリカ粒子分散液およびその製造方法
JP5905767B2 (ja) * 2012-04-17 2016-04-20 多摩化学工業株式会社 中性コロイダルシリカ分散液の分散安定化方法及び分散安定性に優れた中性コロイダルシリカ分散液
US11499070B2 (en) * 2015-01-19 2022-11-15 Fujimi Incorporated Modified colloidal silica and method for producing the same, and polishing agent using the same
TWI757349B (zh) 2016-11-07 2022-03-11 日商日揮觸媒化成股份有限公司 研磨用氧化矽系粒子及研磨材
TWI762528B (zh) * 2016-12-02 2022-05-01 日商日揮觸媒化成股份有限公司 研磨用氧化矽系粒子及研磨材
JPWO2021153502A1 (https=) * 2020-01-28 2021-08-05
JP2022063814A (ja) * 2020-10-12 2022-04-22 合資会社 ナベショー 合成シリカ粉の製造方法
JP2023004284A (ja) * 2021-06-25 2023-01-17 三菱ケミカル株式会社 シリカ粒子の製造方法、シリカゾルの製造方法及び研磨方法

Also Published As

Publication number Publication date
JPWO2024122583A1 (https=) 2024-06-13
EP4631913A4 (en) 2026-03-04
WO2024122583A1 (ja) 2024-06-13
KR20250121312A (ko) 2025-08-12
TW202436223A (zh) 2024-09-16
EP4631913A1 (en) 2025-10-15
US20250297136A1 (en) 2025-09-25

Similar Documents

Publication Publication Date Title
JP7552669B2 (ja) シリカゾル、研磨組成物、シリコンウェーハの研磨方法、シリコンウェーハの製造方法、化学的機械的研磨組成物及び半導体デバイスの製造方法
CN115023408B (zh) 二氧化硅粒子、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法和半导体装置的制造方法
JP7707558B2 (ja) シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7782174B2 (ja) シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2024177258A (ja) シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
CN113474289A (zh) 二氧化硅粒子及其制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法和半导体器件的制造方法
JP7782173B2 (ja) シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7826621B2 (ja) 研磨用シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP6756422B1 (ja) シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7552019B2 (ja) シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7464201B2 (ja) シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7331437B2 (ja) シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
WO2025134983A1 (ja) シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2024059837A (ja) シリカゾルの製造方法、中間生成物の除去方法及び研磨方法
CN120265574A (zh) 二氧化硅粒子、二氧化硅粒子的制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法及半导体器件的制造方法
JP7622444B2 (ja) シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7491081B2 (ja) シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7505304B2 (ja) シリカ粒子の製造装置、シリカ粒子の製造方法、シリカゾルの製造方法、シリカゾル中の中間生成物の抑制方法及び研磨方法
JP7552145B2 (ja) シリカゾル、シリカゾルの製造方法、研磨組成物、研磨方法及び半導体デバイスの製造方法
JP7622443B2 (ja) シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7581910B2 (ja) シリカ粒子の製造方法、シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2024141877A (ja) シリカ粒子の製造方法、シリカゾルの製造方法、研磨組成物の製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP7331436B2 (ja) シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP2024131533A (ja) シリカゾルの製造方法、研磨組成物の製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
CN119585204A (zh) 二氧化硅粒子及其制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法以及半导体器件的制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination